UNISONIC TECHNOLOGIES CO.

, LTD
2NN65-LC1 Power MOSFET

2.0A, 650V DUAL

N-CHANNEL ENHANCEMENT
MODE POWER MOSFET

 DESCRIPTION 1

The UTC 2NN65-LC1 is a N-channel power MOSFET using

UTC’s advanced technology to provide customers with a minimum
PDFN5×6
on-state resistance and superior switching performance.
The UTC 2NN65-LC1 is generally applied in low power
switching mode power appliances and electronic ballast.

 FEATURES
* RDS(ON) ≤ 5.5 Ω @ VGS=10V, ID=1.0A
* High Switching Speed
* 100% Avalanche Tested

 SYMBOL
(7)(8) (5)(6)
D1 D2

(2) (4)
G1 G2

S1 S2
(1) (3)

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3 4 5 6 7 8
2NN65L-P5060-R 2NN65G-P5060-R PDFN5×6 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

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 MARKING

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 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ±30 V
Continuous ID 2 A
Drain Current
Pulsed (Note 2) IDM 4 A
Avalanche Energy Single Pulsed (Note 3) EAS 28.8 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 2.175 V/ns
Power Dissipation PD 22 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 2.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 2.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 75 °C/W
Junction to Case θJC 5.7 °C/W
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 650 V
Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 10 µA
Forward VGS=+30V, VDS=0V +100 nA
Gate- Source Leakage Current IGSS
Reverse VGS=-30V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.0A 4.7 5.5 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 263 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 30 pF
Reverse Transfer Capacitance CRSS 2.9 pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1) QG 7.5 nC
VDS=520V, VGS=10V, ID=2.0A
Gate to Source Charge QGS 2.9 nC
IG=1mA (Note 1, 2)
Gate to Drain Charge QGD 1 nC
Turn-ON Delay Time (Note 1) tD(ON) 3.8 ns
Rise Time tR VDD=100V, VGS=10V, 15.5 ns
Turn-OFF Delay Time tD(OFF) ID=2.0A, RG =25Ω (Note 1, 2) 23 ns
Fall-Time tF 24.5 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS 2 A
Maximum Body-Diode Pulsed Current (Note 1) ISM 4 A
Drain-Source Diode Forward Voltage (Note 1) VSD IS=2.0A, VGS=0V 1.4 V
Body Diode Reverse Recovery Time trr IS=2.0A, VGS=0V, 280 ns
Body Diode Reverse Recovery Charge Qrr dIF/dt=100A/µs 0.9 µC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.

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 TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit

Gate Pulse Width

VGS D=
Gate Pulse Period 10V
(Driver)

IFM, Body Diode Forward Current

ISD
(DUT) di/dt

IRM

Body Diode Reverse Current

VDS
(DUT) Body Diode Recovery dv/dt

VSD VDD

Body Diode Forward

Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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 TEST CIRCUITS AND WAVEFORMS

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 TYPICAL CHARACTERISTICS

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 TYPICAL CHARACTERISTICS (Cont.)

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 TYPICAL CHARACTERISTICS (Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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