UNISONIC TECHNOLOGIES CO.

, LTD
11N50 Preliminary Power MOSFET

11A, 500V N-CHANNEL

POWER MOSFET
1 TO-220
„ DESCRIPTION
The UTC 11N50 is an N-channel enhancement mode power
MOSFET. It uses UTC advanced planar stripe, DMOS technology to
provide customers perfect switching performance, minimal on-state
1
resistance. It also can withstand high energy pulse in the avalanche TO-220F
and commutation mode.
The UTC 11N50 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
„ FEATURES 1
TO-220F1
* RDS(ON)=0.55Ω @ VGS=10V
* Fast Switching
* With 100% Avalanche Tested
„ SYMBOL
1
2.Drain TO-262

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
11N50L-TA3-T 11N50G-TA3-T TO-220 G D S Tube
11N50L-TF1-T 11N50G-TF1-T TO-220F1 G D S Tube
11N50L-TF3-T 11N50G-TF3-T TO-220F G D S Tube
11N50L-T2Q-T 11N50G-T2Q-T TO-262 G D S Tube

www.unisonic.com.tw 1 of 6
Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-462.d
11N50 Preliminary Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS 500 V
Gate to Source Voltage VGSS ±30 V
TC=25°C 11 (Note 2) A
Continuous Drain Current ID
TC=100°C 7 (Note 2) A
Pulsed Drain Current (Note 3) IDM 44 (Note 2) A
Single Pulsed Avalanche Energy(Note 4) EAS 670 mJ
Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns
TO-220 195
TO-220F1 40
TC=25°C W
TO-220F 48
TO-262 195
Power Dissipation PD
TO-220 1.56
Derate above TO-220F1 0.32
W/°C
25°C TO-220F 0.39
TO-262 1.56
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=10mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C
5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
„ THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 62.5 °C/W
TO-220 0.64
TO-220F1 3.1
Junction to Case θJC °C/W
TO-220F 2.58
TO-262 0.64

UNISONIC TECHNOLOGIES CO., LTD 2 of 6

www.unisonic.com.tw QW-R502-462.d
11N50 Preliminary Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 500 V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C 0.5 V/°C
VDS=500V, VGS=0V 10 µA
Drain-Source Leakage Current IDSS
VDS=500V, TJ=125°C 100 µA
Gate-Source Leakage Current IGSS VDS=0V ,VGS=±30V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA 2.0 4.0 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A 0.48 0.55 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 1515 2055 pF
Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz 185 235 pF
Reverse Transfer Capacitance CRSS 25 30 pF
SWITCHING PARAMETERS
Total Gate Charge QG 43 55 nC
VDS=400V, VGS=10V, ID=11A
Gate-Source Charge QGS 8 nC
(Note 1, 2)
Gate-Drain Charge QGD 19 nC
Turn-ON Delay Time tD(ON) 24 57 ns
Turn-ON Rise Time tR VDD=250V, ID=11A, RG=3Ω 70 150 ns
Turn-OFF Delay Time tD(OFF) (Note 1, 2) 120 250 ns
Turn-OFF Fall Time tF 75 160 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS 11 A
Maximum Body-Diode Pulsed Current ISM 44 A
Drain-Source Diode Forward Voltage VSD IS =11A, VGS=0V 1.4 V
Body Diode Reverse Recovery Time trr VGS=0V, IS=11A, 90 ns
Body Diode Reverse Recovery Charge QRR dIF/dt=100A/μs (Note 1) 1.5 μC
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 3 of 6

www.unisonic.com.tw QW-R502-462.d
11N50 Preliminary Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 4 of 6

www.unisonic.com.tw QW-R502-462.d
11N50 Preliminary Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS
90%

10%
VGS
tD(ON) tD(OFF)
tR tF

Switching Test Circuit Switching Waveforms

VGS

QG
10V

QGS QGD

Charge

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6

www.unisonic.com.tw QW-R502-462.d
11N50 Preliminary Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD 6 of 6

www.unisonic.com.tw QW-R502-462.d