UNISONIC TECHNOLOGIES CO.

, LTD
1N90 Preliminary Power MOSFET

1 Amps, 900 Volts

N-CHANNEL POWER MOSFET
1
TO-220

„ DESCRIPTION
The UTC 1N90 is an N-channel mode power MOSFET, using
UTC’s advanced technology to provide costomers planar stripe and 1
DMOS technology. This technology specializes in allowing a minimum TO-220F
on-state resistance, superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
The UTC 1N90 is universally applied in high efficiency switch mode
power supply. 1
TO-220F1

„ FEATURES
* 1.0A, 900V, RDS(on)=16Ω @VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested

„ SYMBOL
2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
1N90L-TA3-T 1N90G-TA3-T TO-220 G D S Tube
1N90L-TF3-T 1N90G-TF3-T TO-220F G D S Tube
1N90L-TF1-T 1N90G-TF1-T TO-220F1 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

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1N90 Preliminary Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS ±30 V
Continuous ID 1.0 A
Drain Current
Pulsed (Note 1) IDM 4.0 A
Avalanche Current (Note 1) IAR 1.0 A
Single Pulsed (Note 2) EAS 90 mJ
Avalanche Energy
Repetitive (Note 1) EAR 4.5 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns
TO-220 2.5 W
Power Dissipation PD
TO-220F/TO-220F1 45 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55~+150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220 62.5 °C/W
Junction to Ambient θJA
TO-220F/TO-220F1 62.5 °C/W
TO-220 3.13 °C/W
Junction to Case θJC
TO-220F/TO-220F1 5.35 °C/W

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1N90 Preliminary Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSSVGS=0V, ID=250µA 900 V
ID=250μA,
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 1.0 V/°C
Referenced to 25°C
VDS=900V, VGS=0V 10 µA
Drain-Source Leakage Current IDSS
VDS=640V, TC=125°C 100 µA
Forward VDS=0V ,VGS=30V 100 nA
Gate-Source Leakage Current IGSS
Reverse VDS=0V ,VGS=-30V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.5A 10.3 16.0 Ω
Forward Transconductance gFS VDS=50V, ID=0.5A (Note 4) 0.75 S
DYNAMIC PARAMETERS
Input Capacitance CISS 150 195 pF
Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz 20 26 pF
Reverse Transfer Capacitance CRSS 2.7 3.5 pF
SWITCHING PARAMETERS
Total Gate Charge QG 5.5 7.2 nC
VDS=640V, VGS=10V, ID=1.0A
Gate-Source Charge QGS 1.1 nC
(Note 4,5)
Gate-Drain Charge QGD 3.3 nC
Turn-ON Delay Time tD(ON) 10 30 ns
Turn-ON Rise Time tR VDD=400V, ID=1.0A, RG=25Ω 25 60 ns
Turn-OFF Delay Time tD(OFF) (Note 4,5) 15 40 ns
Turn-OFF Fall Time tF 25 60 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS 1.0 A
Maximum Body-Diode Pulsed Current ISM 4.0 A
Drain-Source Diode Forward Voltage VSD IS =1.0A, VGS=0V 1.4 V
Body Diode Reverse Recovery Time tRR VGS=0V, IS=1.0A, 300 ns
Body Diode Reverse Recovery Charge QRR dIF/dt=100A/μs (Note 4) 0.6 μC
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=170mH, IAS=1.0A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤1.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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1N90 Preliminary Power MOSFET
„ TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

RG VDS

L
-

ISD
VGS
VDD

Driver

Same Type
as DUT

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

VGS D=
Gate Pulse Period 10V
(Driver)

IFM, Body Diode Forward Current

ISD
(DUT) di/dt

IRM

Body Diode Reverse Current

VDS
(DUT) Body Diode Recovery dv/dt

VSD VDD

Body Diode Forward

Voltage Drop

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1N90 Preliminary Power MOSFET

Gate Charge Test Circuit Gate Charge Waveforms

VGS
Same Type
as DUT
QG
12V
10V

200nF
50kΩ VDS QGS QGD
300nF

VGS

DUT
3mA
Charge

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

VDS EAS= 1
2 LIAS
2 BVDSS
BVDSS-VDD
RG BVDSS
ID
L IAS

10V ID(t)

tP DUT
VDD VDD VDS(t)

Time
tP

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1N90 Preliminary Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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