UNISONIC TECHNOLOGIES CO.

, LTD
4N50 Preliminary Power MOSFET

4 Amps, 500 Volts

N-CHANNEL POWER MOSFET

„ DESCRIPTION 1
TO-220
The UTC 4N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand 1
high energy pulse in the avalanche and commutation mode. TO-220F
The UTC 4N50 is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.

„ FEATURES
* 4A, 500V, RDS(ON)=2.0Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested

„ SYMBOL
2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
4N50L-TA3-T 4N50G-TA3-T TO-220 G D S Tube
4N50L-TF3-T 4N50G-TF3-T TO-220F G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

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4N50 Preliminary Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
Continuous (TC=25°C) ID 4 A
Drain Current
Pulsed (Note 1) IDM 16 * A
Avalanche Current (Note 1) IAR 4 A
Single Pulsed (Note 2) EAS 216 mJ
Avalanche Energy
Repetitive (Note 3) EAR 8.5 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
TO-220 85
TC=25°C W
TO-220F 28
Power Dissipation PD
TO-220 0.67
Derate above 25°C W/°C
TO-220F 0.22
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55~+150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* Drain current limited by maximum junction temperature
„ THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220 62.5
Junction to Ambient θJA °C/W
TO-220F 62.5
TO-220 1.47
Junction to Case θJC °C/W
TO-220F 4.5

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4N50 Preliminary Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V
Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 1 µA
Forward VGS=+30V, VDS=0V +100 nA
Gate- Source Leakage Current IGSS
Reverse VGS=-30V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A 1.65 2.0 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 485 650 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 65 90 pF
Reverse Transfer Capacitance CRSS 5 8 pF
SWITCHING PARAMETERS
Total Gate Charge QG 11 15 nC
VGS=10V, VDS=400V, ID=4A
Gate to Source Charge QGS 3 nC
(Note 4, 5)
Gate to Drain Charge QGD 5 nC
Turn-ON Delay Time tD(ON) 14 38 ns
Rise Time tR VDD=250V, ID=4A, RG=25Ω 21 52 ns
Turn-OFF Delay Time tD(OFF) (Note 4, 5) 27 64 ns
Fall-Time tF 20 50 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS 4 A
Maximum Body-Diode Pulsed Current ISM 16 A
Drain-Source Diode Forward Voltage VSD IS=4A, VGS=0V 1.6 V
Body Diode Reverse Recovery Time tRR IS=4A, VGS=0V, dIF/dt=100A/µs 36 ns
Body Diode Reverse Recovery Charge QRR (Note 4) 33 µC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 27mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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4N50 Preliminary Power MOSFET
„ TEST CIRCUITS AND WAVEFORMS

Gate Charge Test Circuit Gate Charge Waveforms

VGS
Same Type
as DUT
QG
12V
10V

200nF
50kΩ VDS QGS QGD
300nF

VGS

DUT
3mA
Charge

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

VDS EAS= 1
2 LIAS
2 BVDSS
BVDSS-VDD
RG BVDSS
ID
L IAS

10V ID(t)

tP DUT
VDD VDD VDS(t)

Time
tP

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4N50 Preliminary Power MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

RG VDS

L
-

ISD
VGS
VDD

Driver

Same Type
as DUT

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

VGS D=
Gate Pulse Period 10V
(Driver)

IFM, Body Diode Forward Current

ISD
(DUT) di/dt

IRM

Body Diode Reverse Current

VDS
(DUT) Body Diode Recovery dv/dt

VSD VDD

Body Diode Forward

Voltage Drop

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4N50 Preliminary Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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