UNISONIC TECHNOLOGIES CO.
, LTD
2N7002K Power MOSFET
300mA, 60V N-CHANNEL
ENHANCEMENT MODE
MOSFET
DESCRIPTION
The UTC 2N7002K uses advanced technology to provide
excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
1.Gate
2.Source
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2N7002KL-AE2-R 2N7002KG-AE2-R SOT-23-3 G S D Tape Reel
Note: Pin Assignment: G: Gate S: Source D: Drain
MARKING
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2N7002K Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous 300
Drain Current ID mA
Pulse(Note 2) 800
Power Dissipation 350 mW
PD
Derating above TA=25°C 2.8 mW/°C
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10µA 60 V
Drain-Source Leakage Current IDSS VDS=60V, VGS=0V 1.0 µA
Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ±10 µA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=10V, ID=1mA 1.0 1.85 2.5 V
VGS=10V, ID=300m A 2 Ω
Static Drain-Source On-Resistance (Note) RDS(ON)
VGS=4.5V, ID=200mA 4 Ω
DYNAMIC PARAMETERS
Input Capacitance (Note 1) CISS 25 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1.0MHz 11 pF
Reverse Transfer Capacitance CRSS 5 pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1) QG 5.22 nC
VDS=48V, VGS=10V, ID=0.3A
Gate to Source Charge QGS 1.8 nC
IG=1mA (Note 1, 2)
Gate to Drain Charge QGD 0.8 nC
Turn-ON Delay Time tD(ON) ID=0.2 A, VDD=30V, VGS=10V, 12 ns
Turn-OFF Delay Time tD(OFF) RL=150Ω, RG=10Ω 20 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS 300 mA
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 0.8 A
Forward Current
S
Drain-Source Diode Forward Voltage VSD VGS=0V, I =300mA (Note ) 0.88 1.5 V
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width≦300μs, Duty cycle≦1%
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2N7002K Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit Switching Waveforms
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2N7002K Power MOSFET
TYPICAL CHARACTERISTICS
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2N7002K Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
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2N7002K Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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