UNISONIC TECHNOLOGIES CO.

, LTD
18N65 Power MOSFET

18A, 650V N-CHANNEL

POWER MOSFET

 DESCRIPTION
The UTC 18N65 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
 FEATURES
* RDS(ON) ≤ 0.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 50nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 23pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL
2.Drain

1.Gate

3.Source

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
18N65L-T3P-T 18N65G-T3P-T TO-3P G D S Tube
18N65L-T47-T 18N65G-T47-T TO-247 G D S Tube
18N65L-TC3-T 18N65G-TC3-T TO-230 G D S Tube

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18N65 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT

Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current ID 18 A
Pulsed Drain Current IDM 45 A
Avalanche Current IAR 18 A
Single Pulsed EAS 1000 (Note 2)
Avalanche Energy mJ
Repetitive EAR 30
Peak Diode Recovery dv/dt dv/dt 10 V/ns
TO-3P 390 W
Power Dissipation TO-247 PD 357 W
TO-230 360 W
Junction Temperature TJ 150 °С
Storage Temperature TSTG -55 ~ +150 °С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=6.18mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°С
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-3P 30 °С/W
Junction to Ambient TO-247 θJA 40 °С/W
TO-230 62.5 °С/W
TO-3P 0.32 °С/W
Junction to Case TO-247 θJC 0.35 °С/W
TO-230 0.5 °С/W

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18N65 Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 V
Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 25 µA
Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=9A (Note) 0.36 0.5 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 2500 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 280 pF
Reverse Transfer Capacitance CRSS 23 pF
SWITCHING PARAMETERS
Turn-ON Delay Time tD(ON) 21 ns
Turn-ON Rise Time tR VGS=10V, VDS=0.5VDSS, 60 ns
Turn-OFF Delay Time tD(OFF) ID=18A, RG=5Ω (External) 62 ns
Turn-OFF Fall-Time tF 60 ns
Total Gate Charge QG 50 nC
VGS=10V, VDS=0.8VDSS,
Gate Source Charge QGS 15 nC
ID=18A
Gate Drain Charge QGD 18 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD IF=IS ,VGS=0V (Note ) 1.5 V
Maximum Continuous Drain-Source
IS VGS=0V 18 A
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM Repetitive 54 A
Forward Current
Reverse Recovery Time trr VGS=0V, dIF/dt=100A/µs, 200 ns
Reverse Recovery Charge QRR IS=18A, VR=100V 0.8 µC
Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

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18N65 Power MOSFET

 TYPICAL CHARACTERISTICS

Drain-Source On-State
Drain Current vs. Source to Drain Voltage
Resistance Characteristics
24 12
VGS=10V,
20 10 ID=9.0A

Drain Current, ID (A)

Drain Current,ID (A)

16 8

12 6

8 4

4
2

0
0
0 200 400 600 800 1000 0 1 2 3 4
Source to Drain Voltage,VSD (mV) Drain to Source Voltage, VDS (V)

Drain Current vs. Gate Threshold Voltage Drain Current vs. Drain-Source
Breakdown Voltage
300

400
250
350
Drain Current,ID (μA)

Drain Current,ID (µA)

200 300

250
150
200

100 150

100
50
50

0 0
0 1 2 3 4 0 200 400 600 800 1000
Gate Threshold Voltage,VTH (V) Drain-Source Breakdown Voltage,BVDSS(V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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