UNISONIC TECHNOLOGIES CO.

, LTD
9N65 Preliminary Power MOSFET

9A, 650V N-CHANNEL

POWER MOSFET

„ DESCRIPTION
The UTC 9N65 is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 9N65 is generally applied in high efficiency switch mode
power supplies and uninterruptible power supplies.

„ FEATURES
* RDS(ON)=1.1Ω @ VGSS=10V
* High Switching Speed
* Improved dv/dt Capability
* 100% Avalanche Tested

„ SYMBOL
2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
9N65L-TA3-T 9N65G-TA3-T TO-220 G D S Tube
9N65L-TF3-T 9N65G-TF3-T TO-220F G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

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9N65 Preliminary Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ±30 V
Continuous, @TC=25°C 9 A
ID
Drain Current VGSS@10V @TC=100°C 5.4 A
Pulsed (Note 2) IDM 36 A
Avalanche Current (Note 2) IAR 5.2 A
Single Pulsed (Note 2) EAR 16 mJ
Avalanche Energy
Repetitive (Note 3) EAS 375 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 2.8 V/ns
TO-220 167
Power Dissipation(@TC=25°C) W
TO-220F 44
PD
TO-220 1.3
Linear Derating Factor W/°C
TO-220F 0.35
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55~+150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Starting TJ=25°C, L=9.25mH, RG=25Ω, IAS=9A.
4. ISD≤5.2A, di/dt≤90A/µs, VDD≤BVDSS, TJ≤150°C

„ THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220 62
Junction to Ambient θJA °C/W
TO-220F 62.5
TO-220 0.75
Junction to Case θJC °C/W
TO-220F 2.86

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9N65 Preliminary Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 650 V
Breakdown Voltage Temperature Reference to 25°C, ID=1mA
∆ BVDSS /∆TJ 0.67 V/°C
Coefficient (Note 3)
VDS=650V, VGS=0V 25
Drain-Source Leakage Current IDSS µA
VDS=520V, VGS=0V, TJ=125°C 250
Forward VGS=+30V +100 nA
Gate- Source Leakage Current IGSS
Reverse VGS=-30V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.1A 0.85 1.1 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 1417 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1.0MHz 177 pF
Reverse Transfer Capacitance CRSS 7 pF
SWITCHING PARAMETERS
Total Gate Charge QG 48 nC
VDS=520V, VGS=10V, ID=9A
Gate to Source Charge QGS 12 nC
(Note 2)
Gate to Drain ("Miller") Charge QGD 19 nC
Turn-ON Delay Time tD(ON) 14 ns
Rise Time tR VDD=325V, ID=9A, RG=9.1Ω, 20 ns
Turn-OFF Delay Time tD(OFF) RD = 62Ω (Note 2) 34 ns
Fall-Time tF 18 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS MOSFET symbol 9 A
showing the integral
Maximum Body-Diode Pulsed Current
ISM reverse p-n junction 36 A
(Note 1)
diode.
Drain-Source Diode Forward Voltage VSD TJ=25°C, IS=9A,VGS=0V(Note 2) 1.5 V
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
3. Uses IRFIB5N65A data and test conditions

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9N65 Preliminary Power MOSFET
„ TEST CIRCUITS AND WAVEFORMS

VDS
90%

10%
VGS
tD(ON) tD(OFF)
tR tF

Switching Test Circuit Switching Waveforms

VGS

QG
10V

QGS QGD

Charge

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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9N65 Preliminary Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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