UNISONIC TECHNOLOGIES CO.

, LTD
10N65Z Power MOSFET

10A, 650V N-CHANNEL

POWER MOSFET

 DESCRIPTION
The UTC 10N65Z is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.

 FEATURES
* RDS(ON) =0.95Ω@ VGS=10V, ID=4.75A
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

 SYMBOL

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
10N65ZL-TF1-T 10N65ZG-TF1-T TO-220F1 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

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10N65Z Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ± 20 V
Avalanche Current (Note 2) IAR 10 A
Continuous ID 10 A
Drain Current
Pulsed (Note 2) IDM 38 A
Single Pulsed (Note 3) EAS 110 mJ
Avalanche Energy
Repetitive (Note 2) EAR 15.6 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Power Dissipation PD 50 W
Junction Temperature TJ +150 °C
Operating Temperature TOPR -55 ~ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, IAS = 3.93A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
 THERMAL DATA
PARAMETER SYMBOL RATING UNIT
Junction to Ambient θJA 62.5 °C/W
Junction to Case θJC 2.5 °C/W

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10N65Z Power MOSFET

 ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID= 250μA 650 V
Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 1 µA
Forward VGS=20V, VDS=0V 5 µA
Gate-Source Leakage Current IGSS
Reverse VGS=-20V, VDS=0V -5 µA
Breakdown Voltage Temperature
∆BVDSS/∆TJ ID=250 µA, Referenced to 25°C 0.7 V/°C
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.75A 0.87 0.95 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 1300 2040 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1.0 MHz 135 215 pF
Reverse Transfer Capacitance CRSS 25 35 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 70 55 ns
Turn-On Rise Time tR VDD=325V, ID=10A, RG=25Ω 145 150 ns
Turn-Off Delay Time tD(OFF) (Note1, 2) 280 300 ns
Turn-Off Fall Time tF 135 165 ns
Total Gate Charge QG 124 140 nC
VDS=520V, ID=10A, VGS=10V
Gate-Source Charge QGS 26 nC
(Note1, 2)
Gate-Drain Charge QGD 42 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=10A 1.4 V
Maximum Continuous Drain-Source Diode
IS 10 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 38 A
Forward Current
Reverse Recovery Time trr VGS=0V, IS=10A, 420 ns
Reverse Recovery Charge QRR dIF/dt=100A/µs (Note1) 4.2 µC
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature

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10N65Z Power MOSFET
 TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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10N65Z Power MOSFET
 TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit Switching Waveforms

Gate Charge Test Circuit Gate Charge Waveform

L
VDS

BVDSS
IAS

RD
VDD
ID(t)
VDS(t)
VDD
10V D.U.T.
tp
tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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10N65Z Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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