UNISONIC TECHNOLOGIES CO.
, LTD
UT9435 Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UT9435 is P-Channel Power MOSFET, designed with
high density cell with fast switching speed, ultra low
on-resistance, and excellent thermal and electrical capabilities.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC
converters.
SYMBOL
2.Drain
Lead-free: UT9435L
1.Gate Halogen-free: UT9435G
3.Source
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Plating Halogen Free 1 2 3 4 5 6 7 8
UT9435-AB3-R UT9435L-AB3-R UT9435G-AB3-R SOT-89 G D S - - - - - Tape Reel
UT9435-TN3-R UT9435L-TN3-R UT9435G-TN3-R TO-252 G D S - - - - - Tape Reel
UT9435-S08-R UT9435L-S08-R UT9435G-S08-R SOP-8 S S S G D D D D Tape Reel
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UT9435 Power MOSFET
PIN CONFIGURATION
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UT9435 Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID -4.2 A
Pulsed Drain Current (Note 1, 2) IDM -20 A
SOT-89 1.25
Power Dissipation (Ta=25℃) PD W
SOP-8 2.5
Power Dissipation (Tc=25℃) TO-252 PD 12.5 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
SOT-89 100
Junction to Ambient (Note 3) TO-252 θJA 110 °C/W
SOP-8 50
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =-250 uA -30 V
Drain-Source Leakage Current IDSS VDS=-30V, VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS= ±20V ±100 nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25℃, ID=-1mA -0.1 V/℃
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250uA -1 -3 V
VGS=-10V, ID=-4A 50 mΩ
Static Drain-Source On-Resistance (Note 2) RDS(ON)
VGS=-4.5V, ID=-2A 90 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 520 830 pF
Output Capacitance COSS VGS=0V,VDS=-25V,f=1.0MHz 180 pF
Reverse Transfer Capacitance CRSS 130 pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 2) QG 10 16 nC
Gate-Source Charge QGS VDS=-25V, VGS=-4.5V, ID=-4A 2 nC
Gate-Drain Charge QGD 6 nC
Turn-ON Delay Time (Note 2) tD(ON) 10 48 ns
Turn-ON Rise Time tR VDS=-15V,ID=-1A, RG=3.3Ω, 7 40 ns
Turn-OFF Delay Time tD(OFF) VGS=-10V,RD=15Ω 26 292 ns
Turn-OFF Fall Time tF 14 112 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD IS=-1A, VGS=0V -1.3 V
Reverse Recovery Time tRR IS=-4A, VGS=0V, 30 ns
Reverse Recovery Charge QRR dI/dt=-100A/μs 24 nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs , duty cycle ≤2%.
3. Surface mounted on 1 in 2 copper pad of FR4 board, t≤10s.
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UT9435 Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage Drain-Source On-State Resistance Characteristics
1.2 6
1.0 5
VGS=-10V,
0.8 4
ID=-4A
0.6 3
0.4 2
VGS=-4.5V,
ID=-2A
0.2 1
0 0
0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200
Source to Drain Voltage, VSD (V) Drain to Source Voltage, VDS (mV)
Drain Current vs.
Drain Current vs. Gate Threshold Voltage
Drain-Source Breakdown Voltage
300 450
400
250
350
200 300
250
150
200
100 150
100
50
50
0 0
0 0.5 1.0 1.5 2.0 0 10 20 30 40 50
Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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