FNK3206T

60V N-Channel MOSFET

Description
The FNK 3206T uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in automotive applications and a wide variety of other
applications.

Features
● VDS=60V; ID=210A@ VGS=10V;
RDS(ON)< 3mΩ @ VGS=10V Schematic diagram

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-247 top view

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 210
ID
Current G TC=100°C 160 A
Pulsed Drain Current C IDM 840
Continuous Drain TA=25°C 18
IDSM A
Current TA=70°C 15
Avalanche Current C IAS, IAR 108 A
Avalanche energy L=0.3mH C EAS, EAR 874 mJ
TC=25°C 333
PD W
Power Dissipation B TC=100°C 167
TA=25°C 1.9
PDSM W
Power Dissipation A TA=70°C 1.2
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 12 15 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 54 65 °C/W
Maximum Junction-to-Case Steady-State RθJC 0.35 0.45 °C/W

FNK-Semiconductor 1/8 Nov.2016.Rev.1.0

 FNK3206T
Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V
VDS=60V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.2 2.9 4 V
ID(ON) On state drain current VGS=10V, VDS=5V 540 A

2.2 3
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A mΩ
TJ=125°C 2.8 4
gFS Forward Transconductance VDS=5V, ID=20A 60 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.67 1 V
IS Maximum Body-Diode Continuous CurrentG 180 A
DYNAMIC PARAMETERS
C Input Capacitance 7750 pF
C Output Capacitance VGS=0V, VDS=30V, f=1MHz 1370 pF
C Reverse Transfer Capacitance 900 pF
R Gate resistance VGS=0V, VDS=0V, f=1MHz 1.37 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 85 108 130 nC
Qgs Gate Source Charge VGS=10V, VDS=30V, ID=20A 24 30 36 nC
Qgd Gate Drain Charge 27 46 65 nC
tD(on) Turn-On DelayTime 31 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=1.5Ω, 29 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 41 ns
tf Turn-Off Fall Time 13 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 20 35 50 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 190 273 355 nC

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω

FNK-Semiconductor 2/8 Nov.2016.Rev.1.0

 FNK3206T
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V VDS=5V
80 80
7V

60 6V 60
ID (A)

ID(A)
40 40

5.5V 125°C
20 20
25°C
VGS=5V
0 0
0 1 2 3 4 5 2 3 4 5 6 7
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

6
2.2

5 Normalized On-Resistance 2.0

VGS=10V
4 1.8 ID=20A
RDS(ON) (mΩ)

1.6
3 VGS=10V
1.4
2
1.2
1
1.0

0 0.8
0 20 40 60 80 100 0 25 50 75 100 125 150 175 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage (Note E) Temperature (Note E)

7 1.0E+02
ID=20A
1.0E+01
6
40 125°C
1.0E+00
RDS(ON) (mΩ)

5
125°C
IS (A)

1.0E-01
4 25°C
1.0E-02

3 25°C 1.0E-03

2 1.0E-04
6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

FNK-Semiconductor 3/8 Nov.2016.Rev.1.0

 FNK3206T
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

VDS=30V
8
ID=20A

Capacitance (pF)
VGS (Volts)

0
0 20 40 60 80 100 120
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 5000

100.0 RDS(ON) 10µs 10µs 4000 TJ(Max)=175°C

limited 100µs TC=25°C
ID (Amps)

Power (W)

10.0 3000 17
1ms
DC 5
1.0 10ms 2000 2
10
TJ(Max)=175°C
0.1 1000
TC=25°C

0.0 0
0.01 0.1 1 10 100 1000 1E-05 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating 18
Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=0.45°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

FNK-Semiconductor 4/8 Nov.2016.Rev.1.0

 FNK3206T
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000 350
IAR (A) Peak Avalanche Current

300

Power Dissipation (W)

TA=25°C
TA=100°C 250

200
100
TA=150°C 150

100
TA=125°C
50

10 0
1 10 100 1000 0 25 50 75 100 125 150 175
Time in avalanche, tA (µs) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

200 1000

TA=25°C
160
Current rating ID(A)

100
17
Power (W)

120
5
2
80
10 10

40

0 1
0 25 50 75 100 125 150 175 0.01 1 100 0 10000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=65°C/W 40

0.1

PD
0.01
Single Pulse Ton
T
0.001
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

FNK-Semiconductor 5/8 Nov.2016.Rev.1.0

 FNK3206T

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

FNK-Semiconductor 6/8 Nov.2016.Rev.1.0

 FNK3206T
TO-247 Package Information

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 4.850 5.150 0.191 0.200
A1 2.200 2.600 0.087 0.102
b 1.000 1.400 0.039 0.055
b1 2.800 3.200 0.110 0.126
b2 1.800 2.200 0.071 0.087
c 0.500 0.700 0.020 0.028
c1 1.900 2.100 0.075 0.083
D 15.450 15.750 0.608 0.620
E1 3.500 REF 0.138 REF
E2 3.600 REF 0.142 REF
L 40.900 41.300 1.610 1.626
L1 24.800 25.100 0.976 0.988
L2 20.300 20.600 0.799 0.811
Φ 7.100 7.300 0.280 0.287
e 5.450 TYP 0.215 TYP
H 5.980 REF 0.235 REF

FNK-Semiconductor 7/8 Nov.2016.Rev.1.0

 FNK3206T
Disclaimer:
• FNK reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing
orders and should verify that such information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using FNK
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply
with the safety standards strictly and take essential measures to avoid situations in which a malfunction or
failure of such Silan products could cause loss of body injury or damage to property.
• FNK will supply the best possible product for customers!

FNK-Semiconductor 8/8 Nov.2016.Rev.1.0