PHB160N03LT

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N-Channel 30 V (D-S) 175 °C MOSFET

FEATURES
PRODUCT SUMMARY
• TrenchFET® power MOSFET
VDS (V) 30
• Package with low thermal resistance
RDS(on) () at VGS = 10 V 0.0075
• 100 % Rg and UIS tested
RDS(on) () at VGS = 4.5 V 0.0095
ID (A) 70
Configuration Single
Package TO-220AB/ TO-263

TO-220AB D

TO-263

S
G D S
G D S N-Channel MOSFET
Top View
Top View

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C a 70
Continuous Drain Current ID
TC = 125 °C 50
Continuous Source Current (Diode Conduction) a IS 70 A
Pulsed Drain Current b IDM 250
Single Pulse Avalanche Current IAS 33
L = 0.1 mH
Single Pulse Avalanche Energy EAS 54 mJ
TC = 25 °C 71
Maximum Power Dissipation b PD W
TC = 125 °C 23
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount c RthJA 50
°C/W
Junction-to-Case (Drain) RthJC 2.1
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).

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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 30 - -
V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VGS = 0 V VDS = 30 V - - 1
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 μA
VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150
On-State Drain Current a ID(on) VGS = 10 V VDS  5 V 70 - - A
VGS = 10 V ID = 20 A - 0.006 0.0075
VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0094
Drain-Source On-State Resistance a RDS(on) 
VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0115
VGS = 4.5 V ID = 15 A - 0.008 0.0095
Forward Transconductance b gfs VDS = 15 V, ID = 15 A - 100 - S
Dynamic b

Input Capacitance Ciss - 1850 2200

Output Capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz - 260 400 pF
Reverse Transfer Capacitance Crss - 95 200
Total Gate Charge c Qg - 46 75
Gate-Source Charge c Qgs VGS = 10 V VDS = 20 V, ID = 50 A - 10 - nC
Gate-Drain Charge c Qgd - 8 -
Gate Resistance Rg f = 1 MHz 1.3 2.8 4.5 
Turn-On Delay Time c td(on) - 9 15
Rise Time c tr VDD = 20 V, RL = 0.4  - 19 30
ns
Turn-Off Delay Time c td(off) ID  50 A, VGEN = 10 V, Rg = 1  - 26 40
Fall Time c tf - 10 15
Source-Drain Diode Ratings and Characteristics b

Pulsed Current a ISM - - 200 A

Forward Voltage VSD IF = 30 A, VGS = 0 V - 0.87 1.5 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Axis Title
250 100 10000
VGS = 10 V thru 6 V

200 80
VGS = 5 V
ID - Drain Current (A)

ID - Drain Current (A)

1000
150 60

2nd line
1st line
2nd line

2nd line
VGS = 4 V
100 40
TC = 25 °C 100
TC = 125 °C
50 20
VGS = 3 V TC = -55 °C
0 0 10
0 4 8 12 16 20 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line

Output Characteristics Transfer Characteristics

Axis Title
10000
Axis Title
200 10000 0.010
TC = -55 °C
VGS = 4.5 V 1000
TC = 25 °C
RDS(on) - On-Resistance (Ω)

160 0.008
gfs - Transconductance (S)

1000

2nd line
1st line
120 0.006
2nd line
1st line

2nd line
2nd line

TC = 125 °C VGS = 10 V
100
80 0.004
100

40 0.002

0 10 0.000 10
0 10 20 30 40 50 0 20 40 60 80 100
ID - Drain Current (A) ID - Drain Current (A)
2nd line 2nd line

Transconductance On-Resistance vs. Drain Current

Axis Title Axis Title

2500 10000 10 10000
VGS - Gate-to-Source Voltage (V)

ID = 50 A
2000 8 VDS = 20 V
Ciss
C - Capacitance (pF)

1000 1000
1500 6
2nd line

2nd line
1st line

1st line
2nd line

2nd line

1000 4
Crss 100 100

500 2
Coss

0 10 0 10
0 6 12 18 24 30 0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
2nd line 2nd line

Capacitance Gate Charge

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Axis Title Axis Title

2.5 10000 100 10000
RDS(on) - On-Resistance (Normalized)

ID = 30 A

2.1 10 TJ = 150 °C

IS - Source Current (A)

VGS = 10 V
1000 1000
1.7 1

2nd line

2nd line
1st line

1st line
2nd line
2nd line

VGS = 4.5 V TJ = 25 °C
1.3 0.1
100 100

0.9 0.01

0.5 10 0.001 10
-50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
2nd line 2nd line

On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage

Axis Title Axis Title

0.05 10000 0.6 10000

0.04 0.2
RDS(on) - On-Resistance (Ω)

VGS(th) Variance (V)

1000 1000
0.03 -0.2
2nd line

2nd line
1st line

1st line
2nd line
2nd line

ID = 5 mA

0.02 -0.6
100 100
ID = 250 μA
TJ = 150 °C
0.01 -1.0

TJ = 25 °C
0 10 -1.4 10
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 175
VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C)
2nd line 2nd line

On-Resistance vs. Gate-to-Source Voltage Threshold Voltage

Axis Title
55 10000
VDS - Drain-to-Source Voltage (V)

ID = 1 mA
52

1000
49
2nd line
1st line
2nd line

46
100

43

40 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line

Drain Source Breakdown vs. Junction Temperature

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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Axis Title
1000 10000
IDM limited

100

ID - Drain Current (A)

100 μs
1000
10

2nd line
ID limited

1st line
2nd line
1 ms
10 ms
1 100 ms, 1 s, 10 s, DC
Limited by RDS(on) (1) 100

0.1
TC = 25 °C
Single pulse BVDSS limited
0.01 10
0.01 0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

Axis Title
10000

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

Notes: 1000
0.2

2nd line
1st line
PDM
0.1
0.1 t1
0.05 t2
t1 100
t2
0.02

Single pulse
0.01 10
0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Ambient

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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Axis Title
10000

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2 1000

2nd line
1st line
0.1
0.1

0.05 100
0.02
Single pulse

0.01 10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Case

Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.

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TO-220AB
MILLIMETERS INCHES
A
E DIM. MIN. MAX. MIN. MAX.
F
A 4.25 4.65 0.167 0.183
ØP b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
Q
H(1)

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610
E 10.04 10.51 0.395 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
1 2 3 J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1)

L(1) 3.32 3.82 0.131 0.150

M* ØP 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
b(1) ECN: X12-0208-Rev. N, 08-Oct-12
L

DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

C
b
e
J(1)
e(1)

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TO-263AB
A
(Datum A)
3 4 A A B
E c2
H
4 L1 4 Gauge
plane
0° to 8° B
D 5 Detail A Seating plane
H
C C L A1
1 L3 L4
2 3
Detail “A”
L2
Rotated 90° CW
B B
scale 8:1

A
2 x b2
2xb c
E
0.010 M A M B
± 0.004 M B
2xe
Base
5 metal D1
Plating 4
b1, b3

(c) c1 5

(b, b2)
Lead tip Section B - B and C - C E1 4
Scale: none View A - A

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

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RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420
(10.668)

(9.017)
0.355
(16.129)
0.635

0.145
(3.683)

0.135
(3.429)

0.200 0.050
(5.080) (1.257)

Recommended Minimum Pads

Dimensions in Inches/(mm)

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