2SK2414

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N-Channel 60 V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY • TrenchFET® Power MOSFET
VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) • 100 % Rg and UIS Tested
0.073 at VGS = 10 V 18.2 • Material categorization:
60 19.8 For definitions of compliance please see
0.085 at VGS = 4.5 V 13.2

TO-252

APPLICATIONS
• DC/DC Converters D

• DC/AC Inverters
• Motor Drives

Drain Connected to Tab

D
G S
S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 16.9
Continuous Drain Current ID
TC = 70 °C 13.6
A
Pulsed Drain Current (t = 300 µs) IDM 25
Avalanche Current IAS 15
Single Avalanche Energya L = 0.1 mH EAS 11.25 mJ
TC = 25 °C 41.7b
Maximum Power Dissipationa PD W
TA = 25 °Cc 2.1
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
c
Junction-to-Ambient (PCB Mount) RthJA 60
°C/W
Junction-to-Case (Drain) RthJC 3
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Base on TC = 25 °C.

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA
VDS = 60 V, V GS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, V GS = 0 V, TJ = 125 °C 50 µA
VDS = 60 V, V GS = 0 V, TJ = 150 °C 250
On-State Drain Currenta ID(on) VDS 10 V, VGS = 10 V 20 A
VGS = 10 V, ID = 6.6 A 0.073
Drain-Source On-State Resistancea RDS(on) 
VGS = 4.5 V, ID = 6 A 0.083
Forward Transconductancea gfs VDS = 15 V, ID = 6.6 A 25 S
Dynamicb
Input Capacitance Ciss 860
Output Capacitance Coss VDS = 30 V, VGS = 0 V, f = 1 MHz 85 pF
Reverse Transfer Capacitance Crss 40
Total Gate Chargec Qg 19.8 30
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 6.6 A 3.6 nC
Gate-Drain Chargec Qgd 4.1
Gate Resistance Rg f = 1 MHz 0.4 2 4 
Turn-On Delay Timec td(on) 8 16
Rise Timec tr VDD = 30 V, RL = 9.6  11 20
Turn-Off Delay Timec td(off) ID  5.2 A, VGEN = 10 V, Rg = 1  18 27
Fall Timec tf 5 10
ns
Turn-On Delay Timec td(on) 38 57
Rise Timec tr VDD = 30 V, RL = 9.6  58 87
Turn-Off Delay Timec td(off) ID  5.2 A, VGEN = 4.5 V, Rg = 1  18 27
Fall Timec tf 8 16
Drain-Source Body Diode Ratings and Characteristicsb TC = 25 °C
Continuous Current IS 16.9
A
Pulsed Current ISM 25
Forward Voltagea VSD IF = 5.2 A, VGS = 0 V 0.8 1.5 V
Reverse Recovery Time trr 34 51 ns
Peak Reverse Recovery Current IRM(REC) IF = 5.2 A, dI/dt = 100 A/µs 3 5 A
Reverse Recovery Charge Qrr 50 75 nC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

25 0.10

VGS = 10 V thru 7 V

20 0.09

RDS(on) - On-Resistance (Ω)

ID - Drain Current (A)

VGS = 4 V
15 0.08
VGS =4.5V

10 0.07 VGS = 10 V

5 0.06
VGS = 3 V

0 0.04
0 0.5 1 1.5 2 0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)

Output Characteristics On-Resistance vs. Drain Current

5 0.15
ID = 6.6 A

4
0.12
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)

TJ = 125 °C
3
TC = 25 °C
0.09

0.06 TJ = 25 °C
1 TC = 125 °C

TC = - 55 °C
0 0.03
0 1 2 3 4 2 4 6 8 10
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage

10
40
ID = 6.6 A
TC = - 55 °C VDS = 30 V
8
TC = 25 °C
VGS - Gate-to-Source Voltage (V)

30
gfs - Transconductance (S)

VDS = 15 V

TC = 125 °C 6

20
VDS = 40 V
4

10
2

0
0 3 6 9 12 0
0 6 12 18 24
ID - Drain Current (A)
Qg - Total Gate Charge (nC)

Transconductance Gate Charge

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100 2.7
ID = 250 μA

TJ = 150 °C 2.4
IS - Source Current (A)

10
2.1

VGS(th) (V)
1.8
1 TJ = 25 °C

1.5

0.1 1.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 50 - 25 0 25 50 75 100 125 150
VSD - Source-to-Drain Voltage (V)
TJ - Temperature (°C)

Source-Drain Diode Forward Voltage Threshold Voltage

1250 127
ID = 250 μA
VDS (V) Drain-to-Source Voltage

1000 122
C - Capacitance (pF)

Ciss

750 117

500 112

250 107
Coss
Crss
0 102
0 20 40 60 80 100 - 50 - 25 0 25 50 75 100 125 150
VDS - Drain-to-Source Voltage (V)
TJ - Temperature (°C)

Capacitance Drain Source Breakdown vs. Junction Temperature

2.25 20
RDS(on) - On-Resistance (Normalized)

VGS = 10 V, ID = 6.6 A

1.8 15
ID - Drain Current (A)

VGS = 4.5 V, ID = 6 A
1.35 10

0.9 5

0.45 0
- 50 - 25 0 25 50 75 100 125 150 0 25 50 75 100 125 150

TJ - Junction Temperature (°C) TC - Case Temperature (°C)

Current Derating
On-Resistance vs. Junction Temperature

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

10 Limited by RDS(on)* 100 μs

TJ = 25 °C

ID - Drain Current (A)

10
1 ms
IDAV (A)

1
10 ms
DC, 10 s 1 s, 100 ms

0.1
TJ = 150 °C

TC = 25 °C
Single Pulse BVDSS Limited
1 0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Time (s)
* VGS > minimum VGS at which RDS(on) is specified

Single Pulse Avalanche Current Capability vs. Time Safe Operating Area

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1

0.1
0.02
0.05
Single Pulse

0.01
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

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TO-252AA Case Outline

E A MILLIMETERS INCHES
C2
b3
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094

L3
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
D

b3 4.95 5.46 0.195 0.215

H
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
L4

D 5.97 6.22 0.235 0.245

L5

L
gage plane height (0.5 mm)

D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
b b2 C
e H 9.40 10.41 0.370 0.410
A1
e1 e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
D1

L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
E1
Notes
• Dimension L3 is for reference only.

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RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224
(5.690)

(6.180)
0.243
(10.668)
0.420

(2.202)
0.087
(2.286)
0.090

0.180 0.055
(4.572) (1.397)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

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