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Dual N-Channel 30 V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

• TrenchFETPower MOSFET
VDS (V) RDS(on) () ID (A)a Qg (Typ.)
• 100 % Rg Tested
0.016 at V GS = 10 V 8.5 • 100 % UIS Tested
30 7.1
0.020 at VGS = 4.5 V 7.6 • Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• Notebook System Power
• Low Current DC/DC

D1 D2

SO-8

S1 1 8 D1

G1 2 7 D1
G1 G2
S2 3 6 D2

G2 4 5 D2

S1 S2
Top View
N-Channel MOSFET N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 8.5
TC = 70 °C 7.5
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 7.2b, c
TA = 70 °C 5.9b, c
Pulsed Drain Current IDM 30
A
TC = 25 °C 2.8
Source-Drain Current Diode Current IS
TA = 25 °C 1.8b, c
Pulsed Source-Drain Current ISM 30
Single Pulse Avalanche Current IAS 10
L = 0.1 mH
Single Pulse Avalanche Energy EAS 5
TC = 25 °C 3.1
TC = 70 °C 2.0
Maximum Power Dissipation PD W
TA = 25 °C 2.0b, c
TA = 70 °C 1.25b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typ. Max. Unit
Maximum Junction-to-Ambientb, d t  10 s RthJA 52 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJF 30 40
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V
VDS Temperature Coefficient VDS/TJ ID = 250 µA 3.0
mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA - 5.2
Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250 µA 1.2 2.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 10
On -State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 8 A 0.016
Drain-Source On-State Resistanceb RDS(on) 
VGS = 4.5 V, ID = 5 A 0.020
Forward Transconductanceb gfs VDS = 15 V, ID = 8 A 27 S
Dynamica
Input Capacitance Ciss 660
Output Capacitance Coss VDS = 15 V, VGS = 0 V, ID = 1 MHz 140 pF
Reverse Transfer Capacitance Crss 86
VDS = 15 V, VGS = 10 V, ID = 8 A 14.5 22
Total Gate Charge Qg
7.1 11
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 8 A 1.9
Gate-Drain Charge Qgd 2.7
Gate Resistance Rg f = 1 MHz 0.5 2.6 5.2 
Turn-On Delay Time td(on) 14 28
Rise Time tr VDD = 15 V, RL = 3  45 80
Turn-Off Delay Time td(off) ID  5 A, VGEN = 4.5 V, Rg = 1  18 35
Fall Time tf 12 24
ns
Turn-On Delay Time td(on) 7 14
Rise Time tr VDD = 15 V, RL = 3  10 20
Turn-Off Delay Time td(off) ID  5 A, VGEN = 10 V, Rg = 1  15 30
Fall Time tf 7 14
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 2.8
A
Pulse Diode Forward Currenta ISM 30
Body Diode Voltage VSD IS = 2 A 0.77 1.1 V
Body Diode Reverse Recovery Time trr 17 34 ns
Body Diode Reverse Recovery Charge Qrr 9 18 nC
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 10
nS
Reverse Recovery Rise Time tb 7

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 10

VGS = 10 V thru 4 V
32 8

I D - Drain Current (A)

I D - Drain Current (A)

24 6

VGS = 3 V
16 4
TC = 25 °C

8 2
TC = 125 °C

TC = - 55 °C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.030 1000

0.026 800
R DS(on) - On-Resistance (Ω)

Ciss
C - Capacitance (pF)

0.022 600

VGS = 4.5 V
0.018 400

Coss
0.014 200
VGS = 10 V
Crss

0.010 0
0 10 20 30 40 50 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 1.8

ID = 8 A ID = 8 A
1.6
VGS - Gate-to-Source Voltage (V)

8
VGS = 10 V
R DS(on) - On-Resistance

VDS = 10 V 1.4
(Normalized)

6
VDS = 20 V
1.2 VGS = 4.5 V
VDS = 15 V
4
1.0

2 0.8

0 0.6
0.0 3.2 6.4 9.6 12.8 16 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.10

ID = 8 A

10 TJ = 150 °C 0.08

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 25 °C
1 0.06

0.1 0.04
TJ = 125 °C

0.01 0.02

TJ = 25 °C

0.001 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.5 50

0.2 40
VGS(th) Variance (V)

- 0.1 30
Power (W)

ID = 5 mA

- 0.4 20
ID = 250 µA

- 0.7 10

- 1.0 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10

TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

100
Limited by RDS(on)*

10
I D - Drain Current (A)

1 ms
1
10 ms

100 ms

0.1 1s
10 s
TA = 25 °C
DC
Single Pulse BVDSS Limited

0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

I D - Drain Current (A)

6

0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

4.0 1.5

3.2 1.2

2.4 0.9
Power (W)
Power (W)

1.6 0.6

0.8 0.3

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

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RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

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