UNISONIC TECHNOLOGIES CO.

, LTD
7N100-C Power MOSFET

7A, 1000V N-CHANNEL

POWER MOSFET

 DESCRIPTION
The UTC 7N100-C provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is 1
suitable for use as a load switch or in PWM applications.
TO-220F2

 FEATURES0
* RDS(ON) ≤ 1.6Ω @ VGS=10V, ID=3.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
7N100L-TF2-T 7N100G-TF2-T TO-220F2 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

 MARKING

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7N100-C Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 1000 V
Gate-Source Voltage VGSS ±30 V
Continuous ID 7 A
Drain Current
Pulsed (Note 2) IDM 14 A
Avalanche Energy Single Pulsed (Note 3) EAS 174 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 1.5 V/ns
Power Dissipation PD 34 W
Junction Temperature TJ +150 °С
Storage Temperature TSTG -55 ~ +150 °С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=5.9A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤7A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
 THERMAL DATA
PARAMETER SYMBOL RATING UNIT
Junction to Ambient θJA 62.5 °C/W
Junction to Case θJC 3.68 °C/W

 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 1000 V
Drain-Source Leakage Current IDSS VDS=1000V, VGS=0V 10 μA
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3.0 5.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A 1.6 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 1830 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 190 pF
Reverse Transfer Capacitance CRSS 19 pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1) QG 52 nC
VDS=800V, VGS=10V, ID=7A
Gate-Source Charge QGS 10 nC
IG=1mA (Note 1, 2)
Gate-Drain Charge QGD 15 nC
Turn-On Delay Time (Note 1) tD(ON) 32 ns
Turn-On Rise Time tR VDD=100V, VGS=10V, 26 ns
Turn-Off Delay Time tD(OFF) ID=7A, RG=25Ω (Note 1, 2) 140 ns
Turn-Off Fall Time tF 51 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS 7 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 14 A
Forward Current
Drain-Source Diode Forward Voltage (Note 1) VSD IS=7A, VGS=0V 1.4 V
Body Diode Reverse Recovery Time (Note 1) trr IS=7A, VGS=0V, 1013 nS
Body Diode Reverse Recovery Charge Qrr dIF/dt=100A/µs 9.2 μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.

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 TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit

Gate Pulse Width

VGS D=
Gate Pulse Period 10V
(Driver)

IFM, Body Diode Forward Current

ISD
(DUT) di/dt

IRM

Body Diode Reverse Current

VDS
(DUT) Body Diode Recovery dv/dt

VSD VDD

Body Diode Forward

Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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 TEST CIRCUITS AND WAVEFORMS

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 TYPICAL CHARACTERISTICS

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 TYPICAL CHARACTERISTICS (Cont.)

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7N100-C Power MOSFET

 TYPICAL CHARACTERISTICS (Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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