UNISONIC TECHNOLOGIES CO.
, LTD
05N30                                                                         Power MOSFET
0.5A, 300V N-CHANNEL
POWER MOSFET
   DESCRIPTION
   The UTC 05N30 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and superior switching
performance.
   FEATURES
* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=0.25A
* High switching speed
* 100% avalanche tested
   SYMBOL
   ORDERING INFORMATION
                  Ordering Number                                  Pin Assignment
                                                        Package                      Packing
        Lead Free               Halogen Free                      1       2     3
      05N30L-AE3-R             05N30G-AE3-R             SOT-23    G      S      D   Tape Reel
      05N30L-TF1-T             05N30G-TF1-T            TO-220F1   G      D      S     Tube
 Note: Pin Assignment: G: Gate S: Source    D: Drain
   MARKING
                      SOT-23                                       TO-220F1
                       05N30
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Copyright © 2024 Unisonic Technologies Co., Ltd                                       QW-R205-270.G
05N30                                                                                      Power MOSFET
    ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
                  PARAMETER                         SYMBOL                     RATINGS                     UNIT
Drain-Source Voltage                                  VDSS                        300                        V
Gate-Source Voltage                                   VGSS                        ±30                        V
Continuous Drain Current                                ID                        0.5                        A
Pulsed Drain Current (Note 2)                          IDM                        2.0                        A
                                      SOT-23                                      0.6                       W
Power Dissipation                                         PD
                                      TO-220F1                                    15                        W
Junction Temperature                                      TJ                     +150                       °С
Storage Temperature                                      TSTG                 -55 ~ +150                    °С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
          Absolute maximum ratings are stress ratings only and functional device operation is not implied.
       2. Repetitive Rating: Pulse width limited by maximum junction temperature.
    THERMAL DATA
                  PARAMETER                        SYMBOL                   RATINGS                       UNIT
                                   SOT-23                                      325                        °С/W
Junction to Ambient                                   θJA
                                   TO-220F1                                    62.5                       °С/W
                                   SOT-23                                      208                        °С/W
Junction to Case                                      θJC
                                   TO-220F1                                    8.33                       °С/W
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
    ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
                PARAMETER                         SYMBOL           TEST CONDITIONS         MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage                     BVDSS     ID=250µA, VDS=0V              300                   V
Drain-Source Leakage Current                         IDSS    VDS=300V                                    10     µA
                                  Forward                    VGS=+30V, VDS=0V                           100     nA
Gate-Source Leakage Current                          IGSS
                                  Reverse                    VGS=-30V, VDS=0V                           -100    nA
ON CHARACTERISTICS
Gate Threshold Voltage                             VGS(TH)   ID=250µA                      1.0          2.5      V
Static Drain-Source On-State Resistance            RDS(ON)   VGS=10V, ID=0.25A                          5.0      Ω
DYNAMIC PARAMETERS
Input Capacitance                                    CISS                                        100             pF
Output Capacitance                                  COSS     VGS=0V, VDS=25V, f=1MHz              20             pF
Reverse Transfer Capacitance                        CRSS                                         3.2             pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1)                            QG                                         8.5            nC
                                                             VDS=240V, VGS=10V, ID=0.5A
Gate to Source Charge                                QGS                                         2.2            nC
                                                             (Note1, 2)
Gate to Drain Charge                                 QGD                                         1.2            nC
Turn-ON Delay Time (Note 1)                         tD(ON)                                        4             ns
Rise Time                                              tR    VDS=150V, VGS=10V, ID=0.5A,         17             ns
Turn-OFF Delay Time                                tD(OFF)   RG=25Ω (Note1, 2)                    9             ns
Fall-Time                                              tF                                        20             ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current                  IS                                               0.5      A
Maximum Body-Diode Pulsed Current                     ISM                                               2.0      A
Drain-Source Diode Forward Voltage (Note 1)          VSD     IS=0.5A, VGS=0V                            1.4      V
Reverse Recovery Time (Note 1)                         trr   IS=0.5A , VGS=0V                    65             ns
Reverse Recovery Charge                               Qrr    di/dt=100A/μs                       75             nC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
        2. Essentially independent of operating temperature.
            UNISONIC TECHNOLOGIES CO., LTD                                                                  2 of 7
            www.unisonic.com.tw                                                                        QW-R205-270.G
05N30                                                                                             Power MOSFET
   TEST CIRCUITS AND WAVEFORMS
                                  D.U.T.            +
                                                    VDS
                         +
                   ISD
                         -                                             L
                             RG
                                                   Driver                                              VDD
                                                            * dv/dt controlled by RG
                                  Same Type                 * ISD controlled by pulse period
                   VGS             as D.U.T.                * D.U.T.-Device Under Test
                                    Peak Diode Recovery dv/dt Test Circuit
      VGS                                               Period                                 P. W.
                                                                                     D=
    (Driver)                  P.W.                                                             Period
                                                                                                             VGS= 10V
                                               IFM, Body Diode Forward Current
      ISD
    (D.U.T.)
                                                                                               di/dt
                                                                             IRM
                                                                     Body Diode Reverse Current
                                                                 Body Diode Recovery dv/dt
      VDS
    (D.U.T.)                                                                                                     VDD
                                                   Body Diode           Forward Voltage Drop
                                    Peak Diode Recovery dv/dt Waveforms
         UNISONIC TECHNOLOGIES CO., LTD                                                                              3 of 7
          www.unisonic.com.tw                                                                                   QW-R205-270.G
05N30                                                                            Power MOSFET
   TEST CIRCUITS AND WAVEFORMS
           Switching Test Circuit                                     Switching Waveforms
                                                       VGS
                                    Same Type
                                     as D.U.T.
                                                                          QG
                                                 VDS
                                                              QGS         QGD
              VGS
                                    DUT
                                                                               Charge
         Gate Charge Test Circuit                                   Gate Charge Waveform
    Unclamped Inductive Switching Test Circuit          Unclamped Inductive Switching Waveforms
         UNISONIC TECHNOLOGIES CO., LTD                                                         4 of 7
          www.unisonic.com.tw                                                              QW-R205-270.G
05N30                                    Power MOSFET
   TYPICAL CHARACTERISTICS
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        www.unisonic.com.tw                   QW-R205-270.G
05N30                                    Power MOSFET
   TYPICAL CHARACTERISTICS (Cont.)
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05N30                                                                                   Power MOSFET
      TYPICAL CHARACTERISTICS (Cont.)
    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
    parameters) listed in products specifications of any and all UTC products described or contained herein.
    UTC products are not designed for use in life support appliances, devices or systems where malfunction
    of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
    part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
    make changes to information published in this document, including without limitation specifications and
    product descriptions, at any time and without notice. This document supersedes and replaces all
    information supplied prior to the publication hereof.
             UNISONIC TECHNOLOGIES CO., LTD                                                            7 of 7
              www.unisonic.com.tw                                                                 QW-R205-270.G