UNISONIC TECHNOLOGIES CO.

, LTD
F30NM65 Power MOSFET

30A, 650V N-CHANNEL

SUPER-JUNCTION MOSFET
1 1

TO-220 TO-220F1
 DESCRIPTION
The UTC F30NM65 is a N-Channel enhancement mode
silicon gate power MOSFET with Fast Body Diode. is designed
high voltage, high speed power switching applications such. 1 1
such as fast switching time, low gate charge, low on-state
resistance and high rugged avalanche characteristics. TO-247 TO-263

 FEATURES 9
5

* RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A

1 1
* Fast body diode MOSFET technology
* Low switching losses due to reduced Qrr TOLL-8B DFN8080-4
* Single Pulse Avalanche Energy Rated
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Avalanche energy tested

 SYMBOL
(2) Drain (5) Drain (9) Drain

(1) Gate (1) Gate (1) Gate

(2) (2)
Driver Driver
Source (3, 4) Source
(3) Source (3, 4, 5, 6, 7, 8)
Power Power Source
Source
TO-220 / TO-220F1
TO-247 / TO-263 DFN8080-4 TOLL-8B

www.unisonic.com.tw 1 of 9
Copyright © 2024 Unisonic Technologies Co., Ltd QW-R205-868.E
F30NM65 Power MOSFET

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3 4 5 6 7 8 9
F30NM65L-TA3-T F30NM65G-TA3-T TO-220 G D S - - - - - - Tube
F30NM65L-TF1-T F30NM65G-TF1-T TO-220F1 G D S - - - - - - Tube
F30NM65L-TQ2-T F30NM65G-TQ2-T TO-263 G D S - - - - - - Tube
F30NM65L-TQ2-R F30NM65G-TQ2-R TO-263 G D S - - - - - - Tape Reel
F30NM65L-T47-T F30NM65G-T47-T TO-247 G D S - - - - - - Tube
F30NM65L-T8B-R F30NM65G-T8B-R TOLL-8B G S S S S S S S D Tape Reel
F30NM65L-K04-8080-R F30NM65G-K04-8080-R DFN8080-4 G S S S D - - - - Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

 MARKING
PACKAGE MARKING

TO-220 / TO-220F1
TO-247 / TO-263

DFN8080-4

TOLL-8B

UNISONIC TECHNOLOGIES CO., LTD 2 of 9

www.unisonic.com.tw QW-R205-868.E
F30NM65 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ±30 V
Continuous ID 30 A
Drain Current
Pulsed (Note 2) IDM 60 A
Avalanche Energy Single Pulsed (Note 3) EAS 1188 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 10.8 V/nS
TO-220/TO-220F1
40 W
TO-263
Power Dissipation TO-247 PD 145 W
TOLL-8B 210 W
DFN8080-4 70 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 60 mH, IAS = 6.29A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220/TO-220F1
62.5 °С/W
TO-263
Junction to Ambient θJA
TO-247 40 °С/W
TOLL-8B/DFN8080-4 35 (Note) °С/W
TO-220/TO-263 0.96 °С/W
TO-220F1 3.12 °С/W
Junction to Case TO-247 θJC 0.86 °С/W
TOLL-8B 0.59 (Note) °С/W
DFN8080-4 1.78 (Note) °С/W
Note: Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.

UNISONIC TECHNOLOGIES CO., LTD 3 of 9

www.unisonic.com.tw QW-R205-868.E
F30NM65 Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 650 V
Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 10 µA
Forward VGS=+30V, VDS=0V +100 nA
Gate- Source Leakage Current IGSS
Reverse VGS=-30V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.5 4.5 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=15A 0.15 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 2580 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 1750 pF
Reverse Transfer Capacitance CRSS 130 pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1) QG 94 nC
VDS=520V, VGS=10V, ID=30A
Gate to Source Charge QGS 22 nC
(Note1, 2)
Gate to Drain Charge QGD 35 nC
Turn-ON Delay Time (Note 1) tD(ON) 34 ns
Rise Time tR VDS=100V, VGS=10V, ID=30A, 31 ns
Turn-OFF Delay Time tD(OFF) RG=25Ω (Note1, 2) 290 ns
Fall-Time tF 128 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS 30 A
Maximum Body-Diode Pulsed Current ISM 60 A
Drain-Source Diode Forward Voltage (Note 1) VSD IS=30A, VGS=0V 1.4 V
Body Diode Reverse Recovery Time (Note 1) trr IS=30A, VGS=0V, 232 ns
Body Diode Reverse Recovery Charge Qrr dIF/dt=100A/µs 2.1 µC
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 9

www.unisonic.com.tw QW-R205-868.E
F30NM65 Power MOSFET

 TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

+
ISD
- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 9

www.unisonic.com.tw QW-R205-868.E
F30NM65 Power MOSFET

 TEST CIRCUITS AND WAVEFORMS

Gate Charge Test Circuit Gate Charge Waveforms

VGS
Same Type
as DUT
QG

VDS QGS QGD

VGS

DUT

Charge

UNISONIC TECHNOLOGIES CO., LTD 6 of 9

www.unisonic.com.tw QW-R205-868.E
F30NM65 Power MOSFET

 TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD 7 of 9

www.unisonic.com.tw QW-R205-868.E
F30NM65 Power MOSFET

 TYPICAL CHARACTERISTICS (Cont.)

UNISONIC TECHNOLOGIES CO., LTD 8 of 9

www.unisonic.com.tw QW-R205-868.E
F30NM65 Power MOSFET

 TYPICAL CHARACTERISTICS (Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

UNISONIC TECHNOLOGIES CO., LTD 9 of 9

www.unisonic.com.tw QW-R205-868.E