UNISONIC TECHNOLOGIES CO.

, LTD
UF730 MOSFET

5.5A, 400V, 1.0 OHM,

N-CHANNEL POWER MOSFET

1
DESCRIPTION
The UF730 power MOSFET is designed for high voltage, high TO-220
speed power switching applications such as switching power
suppliess, switching adaptors.

FEATURES 1

* 5.5A, 400V, Low RDS(ON)(1.0Ω) TO-220F

* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching
*Pb-free plating product number: UF730L

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
UF730-TA3-T UF730L-TA3-T TO-220 G D S Tube
UF730-TF3-T UF730L-TF3-T TO-220F G D S Tube
Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE

UF730L-TA3-T
(1)Packing Type (1) T: Tube
(2)Package Type (2) TA3: TO-220, TF3: TO-220F
(3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn

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UF730 MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25℃, Unless Otherwise Specified)

PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage (TJ =25℃~125℃) VDS 400 V
Drain to Gate Voltage (RGS = 20kΩ) (TJ =25℃~125℃) VDGR 400 V
Gate to Source Voltage VGS ±20 V
Continuous ID 6.5 A
Drain Current TC = 100℃ ID 3.5 A
Pulsed IDM 22 A
Maximum Power Dissipation 93 W
PD
Derating above 25℃ 0.6 W/℃
Single Pulse Avalanche Energy Rating
EAS 300 mJ
(VDD=50V, starting TJ =25℃, L=17mH, RG=25Ω, peak IAS = 5.5A)
Operating Temperature Range TOPR -55 ~ +150 ℃
Storage Temperature Range TSTG -55 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance Junction-Ambient θJA 80
℃/W
Thermal Resistance Junction-Case θJc 1.67

ELECTRICAL CHARACTERISTICS (TC =25℃, Unless Otherwise Specified.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Drain to Source Breakdown
BVDSS ID = 250µA, VGS = 0V 400 V
Voltage
Gate to Threshold Voltage VGS(THR) VDS = VGS, ID = 250µA 2.0 4.0 V
VDS > ID(ON) x RDS(ON)MAX,
On-State Drain Current (Note 1) ID(ON) 5.5 A
VGS = 10V
VDS = Rated BVDSS, VGS = 0V 25 µA
Zero Gate Voltage Drain Current IDSS VDS = 0.8 x Rated BVDSS,
250 µA
VGS = 0V, TJ = 125℃
Gate to Source Leakage Current IGSS VGS = ±20V ±100 nA
Drain to Source On Resistance
RDS(ON) ID = 3.0A, VGS = 10V 0.8 1.0 Ω
(Note 1)
Forward Transconductance
gFS VDS ≥ 10V, ID = 3.3A 2.9 4.4 S
(Note 1)
Turn-On Delay Time tDLY(ON) VDD = 200V, ID ≈ 5.5A, 10 17 ns
Rise Time tR RGS = 12Ω, RL = 35Ω 20 29 ns
Turn-Off Delay Time tDLY(OFF) MOSFET Switching Times are Essentially 35 56 ns
Fall Time tF Independent of Operating Temperature 15 24 ns
Total Gate Charge VGS = 10V, ID = 5.5A,
QG(TOT) 20 35 nC
(Gate to Source + Gate to Drain) VDS = 0.8 x Rated BVDSS
Gate to Source Charge QGS IG(REF) = 1.5mA 3.0 nC
Gate Charge is Essentially Independent of
Gate to Drain “Miller” Charge QGD 10 nC
Operating Temperature
Input Capacitance CISS 600 pF
Output Capacitance COSS VDS = 25V, VGS = 0V,f = 1MHz 150 pF
Reverse - Transfer Capacitance CRSS 40 pF

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UF730 MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage TJ = 25℃, ISD = 5.5A, VGS = 0V
VSD 1.6 V
(Note 1)
Continuous Source to Drain
IS 5.5 A
Current
Pulse Source to Drain Current
ISM 22 A
(Note 2)
Reverse Recovery Time TJ = 25℃, ISD = 5.5A,
tRR 140 300 660 ns
dISD/dt = 100A/µs
Reverse Recovery Charge TJ = 25℃, ISD = 5.5A,
QRR 0.93 2.1 4.3 µC
dISD/dt = 100A/µs
Notes: 1. Pulse Test: Pulse width≤≤300µs, Duty Cycle≤≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. VDD = 50V, starting TJ = 25℃, L = 17mH, RG = 25Ω, peak IAS = 5.5A.

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UF730 MOSFET
TEST CIRCUITS AND WAVEFORMS

VDS

L BVDSS

VDS
RG
VDD IAS VDD
D.U.T.

0
0.01Ω
tp tAV
IAS

Figure 1A. Unclamped Energy Test Circuit Figure 1B. Unclamped Energy Waveforms

VDS
90%
RL

10%
0
RG
90%
VDD
VGS 50%
50%
D.U.T. PULSE WIDTH
VGS 10%
0

tD(ON) tR t D(OFF) t F
tON t OFF

Figure 2A. Switching Time Test Circuit Figure 2B. Resistive Switching Waveforms

VDS
CURRENT (ISOLATED
REGULATOR SUPPLY)
VDD

50kΩ SAME TYPE Q G(TOT)

12V AS DUT VGS
QGS Q GD
BATTERY 0.2µF 0.3µF

D
VDS
G DUT
0
IG(REF) S
0 IG(REF)
IG CURRENT I D CURRENT
SAMPLING SAMPLING 0
RESISTOR RESISTOR

Figure 3A. Gate Charge Test Circuit Figure 3B. Gate Charge Waveforms

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UF730 MOSFET
TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified)

Forward Bias Safe Operating Area Maximum Contionuous Drain Current vs. Case
Temperature
100
Operation in This Area 6
is Limited by RDS(on)
10μs
Drain Current, I D (A)

Drain Current, ID (A)

10 4
100μs

1ms
1 2
10ms
TC=25℃
TJ=Max Rated
DC
Single Pulse 0
0.1
1 10 100 1000 25 50 75 100 125 150

Drain to Source Voltage, VDS (V) Case Temperature, T C (℃)

Output Characteristics Sturation Characteristics

10 10
VGS=10 Pulse Duration=80μs Pulse Duration=80μs VGS=10V
VGS=6.0V Duty Cycle = 0.5% Max Duty Cycle = 0.5% Max
8 8 VGS=6.0V
Drain Current, I D (A)

Drain Current, I D (A)

6 VGS=5.5V 6
VGS =5.5V
4 4
VGS=5.0V
VGS=5.0V
2 2
VGS=4.5V
VGS=4.5V
VGS=4.0V
VGS=4.0V
0 0
0 40 80 120 160 200 0 40 80 120 160 200

Drain to Source Voltage, VDS (V) Drain to Source Voltage, VDS (V)

Drain to Source on Resistance vs. Gate Voltage and

Transfer Characteristics Drain Current
Drain to Source on Resistance, RDS (DN) (Ω)

10 10
Pulse Duration=80μs
Duty Cycle = 0.5% Max
8
Drain Current, IDR (A)

1
VGS =10V
T J=150℃ TJ=25℃ 6

4
0.1 VGS =20V
VDS ≥ 50V
Pulse Duration=80μs 2
Duty Cycle = 0.5% Max
0.01 0
0 2 4 6 8 10 0 3 6 9 12 15
Gate to Source Voltage, VGS (V) Drain Current, ID (A)

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UF730 MOSFET
TYPICAL PERFORMANCE CUVES

Capacitance vs. Drain to Source Voltage Transconductancevs. Drain Current

1500 VGS=0V, f=1MHz 10

Pulse Duration=80μs
CISS=C GS+C GD Duty Cycle = 0.5% Max

Transconductance, gFS (S)

1200 CRSS=CGD 8
Capacitance, C (pF)

COSS∫≈CDS+CGD
CISS TJ=25℃
900 6
COSS
600 4

T J=150℃
300 CRSS 2

0 0
1 10 100 0 2 4 6 8 10

Drain to Source Voltage, VDS (V) Drain Current, ID (A)

Source to Drain Diode Voltage Gate to Source Voltage vs. Gate Charge

100 20 I =5.5A
Pulse Duration=80μs D
Source to Drain Current, ISD (A)

Gate to Source Voltage, VGS (V)

Duty Cycle = 0.5% Max

16
VDS=320V
10 VDS=200V
12 VDS=80V

T J=150℃ TJ=25℃
8
1

0.1 0
0 0.4 0.8 1.2 1.6 2.0 0 8 16 24 32 40
Source to Drain Voltage, VSD (V) Gate Charge, Q G (nC)

UTC assum es no responsibility for equipm ent failures that result from using products at values that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.

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