UNISONIC TECHNOLOGIES CO.

, LTD
80N08 Power MOSFET

80A, 80V N-CHANNEL

POWER MOSFET

 DESCRIPTION
The UTC 80N08 is an N-channel MOSFET using UTC
advanced technology. It can be used in applications, such as
power supply (secondary synchronous rectification), industrial
and primary switch etc.
 FEATURES
* Trench FET Power MOSFETS Technology
 SYMBOL

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
80N08L-T47-T 80N08G-T47-T TO-247 G D S Tube
80N08L-TA3-T 80N08G-TA3-T TO-220 G D S Tube
80N08L-TQ2-T 80N08G-TQ2-T TO-263 G D S Tube
80N08L-TQ2-R 80N08G-TQ2-R TO-263 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

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80N08 Power MOSFET

 MARKING INFORMATION
PACKAGE MARKING

TO-247

TO-220

TO-263

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80N08 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Gate Source Voltage VGS ±20 V
Continuous Drain Current ID 80 A
Pulsed Drain Current IDM 320 A
Avalanche Energy, Single Pulse EAS 810 mJ
TO-247 300 W
Power Dissipation PD
TO-220/TO-263 250 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
L=0.1mH, IAS=80A, VDD=25V, RG=20Ω, Starting TJ =25°C.
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-247 30
Junction to Ambient θJA °C/W
TO-220/TO-263 62
TO-247 0.42
Junction to Case θJC °C/W
TO-220/TO-263 0.5

 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=1mA, VGS=0V 80 V
Drain-Source Leakage Current IDSS VDS=80V, VGS=0V, TJ=25°C 0.01 1 µA
Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ±1 ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.1 3.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=80A 12 mΩ
DYNAMIC PARAMETERS
Input Capacitance CISS 4700 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 1260 pF
Reverse Transfer Capacitance CRSS 580 pF
SWITCHING PARAMETERS
Total Gate Charge QG 144 180 nC
Gate to Source Charge QGS 25 37 nC
Gate to Drain Charge QGD 69 116 nC
Turn-ON Delay Time tD(ON) 26 ns
Rise Time tR VDD=40V, RG=2.2Ω 50 ns
Turn-OFF Delay Time tD(OFF) ID=80A, VGS=10V 61 ns
Fall-Time tF 30 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS 80
Current A
Pulsed Current ISM 320
Drain-Source Diode Forward Voltage VSD ISD=80A 0.9 1.3 V
Reverse Recovery Time tRR IF= IS, dIF/dt=100A/µs 110 140 ns
Reverse Recovery Charge QRR VR=40V 470 590 nC
Note: 1. Defined by design. Not subject to production test.
2. Qualified at -20V and +20V.

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80N08 Power MOSFET

 TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300 300

250 250
Drain Current, ID (µA)

Drain Current, ID (µA)

200 200

150 150

100 100

50 50

0 0
0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3
Drain-Source Breakdown Voltage, BVDSS (V) Gate Threshold Voltage, VTH (V)

Drain-Source On-State Resistance Drain Current vs. Source to Drain Voltage

Characteristics
20 12
18
10
16
Drain Current, ID (A)

Drain Current, ID (A)

14 8
12
10 6
VGS=10V, ID=20A
8
4
6
4 2
2
0 0
0 50 100 150 200 250 300 0 0.2 0.4 0.6 0.8 1.0
Drain to Source Voltage, VDS (mV) Source to Drain Voltage, VSD (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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