Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features Package Dimensions
· High breakdown voltage VCEO 100/120V, High unit:mm
current 1A. 2009B
· Low saturation voltage, excellent h FE linearity.
[2SB631, 631K/2SD600, 600K]
1 : Emitter
2 : Collector
3 : Base
( ) : 2SB631, 631K
Specifications JEDEC : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Plarameter Ss
ymbo C0
ondition 2K
SB631, D60 2tSB631K, D600 Uni
CV
ollector-to-Base Voltage CBO (0
–)100 (V
–)12
CV
ollector-to-Emitter Voltage CEO (0
–)100 (V
–)12
EV
mitter-to-Base Voltage EBO (V
–)5
CIollector Current C (A
–)1
CIollector Current (Pulse) CP (A
–)2
CP
ollector Dissipation C 1W
Tc=25˚C 8W
Jjunction Temperature T 150 ˚C
Sg
torage Temperature Tst –55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Ratings
Plarameter Ss
ymbo Condition Unit
mp
in tx
y ma
CV
ollector-to-Base Breakdown Voltage (BR)CBO IC=(–)10µA, IE=0 B0
631, D600 (V
–)10
B0
631K, D600K (V
–)12
CV
ollector-to-Emitter Brakdown Voltage (BR)CEO IC=(–)1mA, RBE=∞ B0
631, D600 (V
–)10
B0
631K, D600K (V
–)12
EV
mitter-to-Base Breakdown Voltage (BR)EBO IE=(–)10µA, IC=5
0 (V
–)
CIollector Cutoff Current CBO VCB=(–)50V, IE=10 (A
–) µ
EImitter Cutoff Current EBO VEB=(–)4V, IC=1
0 (A
–) µ
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4 http://www.Datasheet4U.com
2SB631, 631K/2SD600, 600K
Ratings
Parameter Symbol Conditions Unit
min typ max
DC Current Gain hF E 1 VCE=(–)5V, IC=(–)50mA 60* 320*
hFE2V CE=(–)5V, IC=0
(–)500mA 2
Gfain-Bandwidth Product T VCE=(–)10V, IC=(–)50mA (z110) MH
1z30 MH
OC
utput Capacitance ob VCB=0
(–)10V, f=1MHz (F
30 ) 2 p
CV
ollector-to-Emitter Saturation Voltage C E ( s at ) IC=(–)500mA, IB=5
(–)50mA (4
–)0.1 (V
–)0.
BV
ase-to-Emitter Saturation Voltage B E ( s at ) IC=(–)500mA, IB=5
(–)50mA (2
–)0.8 (V
–)1.
Ftall Time f See specified Test Circuit (s80) n
1s00 n
Tturn-OFF Time off See specified Test Circuit (s100) n
5s00 n
Sttorage Time stg See specified Test Circuit (s600) n
7s00 n
* : The 2SB631/2SD600 are classified by 50mA hFE as follows :
60
0 D 12 0 10
00 E 20 1 60 F 32
Switching Time Test Circuit
No.346–2/4
2SB631, 631K/2SD600, 600K
No.346–3/4
2SB631, 631K/2SD600, 600K
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any and all SANYO products described or contained herein fall under strategic
products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of
Japan, such products must not be exported without obtaining export license from the Ministry of
International Trade and Industry in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 1998. Specifications and information herein are
subject to change without notice.
PS No.346–4/4
