MMBT3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· Epitaxial Planar Die Construction
· Complementary PNP Type Available SOT-23
(MMBT3906) A Dim Min Max
· Ideal for Medium Power Amplification and C A 0.37 0.51
Switching B 1.19 1.40
TOP VIEW B C C 2.10 2.50
D 0.89 1.05
Mechanical Data B E
D E 0.45 0.61
E
· Case: SOT-23, Molded Plastic G G 1.78 2.05
· Terminals: Solderable per MIL-STD-202, H H 2.65 3.05
Method 208
M J 0.013 0.15
· Terminal Connections: See Diagram K
K 0.89 1.10
· Marking: K1N, R1A, 1AM J
L
· Weight: 0.008 grams (approx.) L 0.45 0.61
M 0.076 0.178
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol MMBT3904 Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC 200 mA
Power Dissipation (Note 1) Pd 350 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 357 K/W
Operating and Storage and Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30036 Rev. E-2 1 of 2 MMBT3904
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V IC = 10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ¾ V IE = 10mA, IC = 0
Collector Cutoff Current ICEX ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current IBL ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
40 ¾ IC = 100µA, VCE = 1.0V
70 ¾ IC = 1.0mA, VCE = 1.0V
DC Current Gain hFE 100 300 IC = 10mA, VCE = 1.0V
¾
60 ¾ IC = 50mA, VCE = 1.0V
30 ¾ IC = 100mA, VCE = 1.0V
0.20 IC = 10mA, IB = 1.0mA
Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.30 V IC = 50mA, IB = 5.0mA
0.65 0.85 IC = 10mA, IB = 1.0mA
Base- Emitter Saturation Voltage VBE(SAT) V
¾ 0.95 IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ¾ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 10 kW
Voltage Feedback Ratio hre 0.5 8.0 x 10-4 VCE = 10V, IC = 1.0mA,
Small Signal Current Gain hfe 100 400 ¾ f = 1.0kHz
Output Admittance hoe 1.0 40 mS
VCE = 20V, IC = 10mA,
Current Gain-Bandwidth Product fT 300 ¾ MHz f = 100MHz
VCE = 5.0V, IC = 100mA,
Noise Figure NF ¾ 5.0 dB
RS = 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td ¾ 35 ns VCC = 3.0V, IC = 10mA,
Rise Time tr ¾ 35 ns VBE(off) = - 0.5V, IB1 = 1.0mA
Storage Time ts ¾ 200 ns VCC = 3.0V, IC = 10mA,
Fall Time tf ¾ 50 ns IB1 = IB2 = 1.0mA
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30036 Rev. E-2 2 of 2 MMBT3904
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