Ordering number : ENA0564 FW808

SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET

FW808 General-Purpose Switching Device

Applications
Features
• 4V drive.
• Composite type, facilitating high-density mounting.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 8 A
Drain Current (PW≤10s) ID Duty cycle≤1% 9 A
Drain Current (PW≤10µs) IDP Duty cycle≤1% 52 A
Allowable Power Dissipation PD Mounted on a ceramic board (1500mm2✕0.8mm) 1unit, PW≤10s 2.3 W
Total Dissipation PT Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s 2.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance yfs VDS=10V, ID=8A 3.5 6 S
RDS(on)1 ID=8A, VGS=10V 17 22 mΩ
Static Drain-to-Source On-State Resistance RDS(on)2 ID=4A, VGS=4.5V 27 38 mΩ
RDS(on)3 ID=4A, VGS=4V 37 52 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 870 pF
Output Capacitance Coss VDS=10V, f=1MHz 175 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 115 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise Time tr See specified Test Circuit. 145 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 50 ns
Fall Time tf See specified Test Circuit. 45 ns
Marking : W808 Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D2706PA TI IM TC-00000441 No. A0564-1/4

 FW808
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Total Gate Charge Qg VDS=10V, VGS=10V, ID=8A 16 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=8A 3.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=8A 2.9 nC
Diode Forward Voltage VSD IS=8A, VGS=0V 0.81 1.2 V

Package Dimensions Electrical Connection

unit : mm (typ)
7005-003
8 7 6 5
1 : Source1
8 5 2 : Gate1
3 : Source2
0.3

4 : Gate2
5 : Drain2
4.4

6.0

6 : Drain2
7 : Drain1
1 : Source1 8 : Drain1
1 4 2 : Gate1
0.43 0.2 3 : Source2 1 2 3 4 Top view
4 : Gate2
1.8 MAX

5 : Drain2
5.0
1.5

6 : Drain2
7 : Drain1
8 : Drain1
0.1

0.595 1.27
SANYO : SOP8

Switching Time Test Circuit

VDD=15V

VIN
10V ID=8A
0V RL=1.875Ω
VIN D VOUT
PW=10µs
D.C.≤1%
G

P.G 50Ω
S FW808

ID -- VDS ID -- VGS
8 16
VDS=10V
4.0V
8.0V

7 14

3.5V
4.5V
10.0V

6 12
Drain Current, ID -- A

Drain Current, ID -- A

5 10
6.0V

4 8

3 6
°C 5

--25°C
Ta=7

2 4
C

VGS=3.0V
25°

1 2

0 0
0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5
Drain-to-Source Voltage, VDS -- V IT11814 Gate-to-Source Voltage, VGS -- V IT11815

No. A0564-2/4
 FW808
RDS(on) -- VGS RDS(on) -- Ta
80 60
On-State Resistance, RDS(on) -- mΩ Ta=25°C

On-State Resistance, RDS(on) -- mΩ

70
50

60
=4A
8A .0V, I D
40 V GS=4
50
Static Drain-to-Source

ID=4A =4A

Static Drain-to-Source
.5V, I D
40 30 V GS=4

30 I =8A
20 10.0V, D
V GS=
20

10
10

0 0
2 3 4 5 6 7 8 9 10 --60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS -- V IT11816 Ambient Temperature, Ta -- °C IT11817
yfs -- ID IS -- VSD
2 3
VDS=10V 2 VGS=0V
Forward Transfer Admittance, yfs -- S

10
7
10 5
3
7 2

Source Current, IS -- A
5 1.0
7
C
5° 5
3 = --2 3
Ta C
2
2 °C 25° 0.1
75 7
5

5°C

°C
C
25°
3

--25
7
1.0 2

Ta=
0.01
7 7
5
5 3
2
3 0.001
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Drain Current, ID -- A IT11818 Diode Forward Voltage, VSD -- V IT11819
SW Time -- ID Ciss, Coss, Crss -- VDS
7 3
5 VDD=15V f=1MHz
VGS=10V 2
3
Switching Time, SW Time -- ns

2
Ciss
Ciss, Coss, Crss -- pF

1000

100 7
7
td(off)
5
5
tf
3 3

2 tr
td(on) 2 Coss

10 Crss
7 100
5 7
3 5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0 5 10 15 20 25 30
Drain Current, ID -- A IT11820 Drain-to-Source Voltage, VDS -- V IT11821
VGS -- Qg ASO
10 100
VDS=10V 7 IDP=52A ≤10µs
9 5
ID=8A
3
Gate-to-Source Voltage, VGS -- V

2 1m
8 s
10 ID=8A 10
Drain Current, ID -- A

7 7 10 ms
5 0m
6 3 s
2 DC 10
s
5 1.0 op
7 era
5 tio
4 n
3 Operation in this
3 2 area is limited by RDS(on).
0.1
2 7
5 Ta=25°C
1 3
Single pulse
2
0.01 Mounted on a ceramic board (1500mm ✕0.8mm)
2 1unit
0
0 2 4 6 8 10 12 14 16 18 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Total Gate Charge, Qg -- nC IT11822 Drain-to-Source Voltage, VDS -- V IT11823

No. A0564-3/4
 FW808
PD -- Ta PD (FET1) -- PD (FET2)
3.0 3.0

Allowable Power Dissipation(FET1), PD -- W

Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s
Allowable Power Dissipation, PD -- W

2.5 2.5
2.3 2.3

2.0 2.0

To
t al
1.5 Di 1.5
1u ss
nit ip
ati
on
1.0 1.0

0.5 0.5

0 0
0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.0 2.3 2.5 3.0
Ambient Temperature, Ta -- °C IT11824 Allowable Power Dissipation(FET2), PD -- W IT11825

Note on usage : Since the FW808 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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Any and all information described or contained herein are subject to change without notice due to
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.

PS No. A0564-4/4