2N7002DW

Dual N-Channel MOSFET

3 2 1 6 5
4

Features:
1
*Low On-Resistance : 7.5 Ω 2
3
*Low Input Capacitance: 22PF
*Low Out put Capacitance : 11PF SOT-363(SC-88)
4 5 6
*Low Threshole :1 .5V(TYE)
*Fast Switching Speed : 11ns

Mechanical Data:
*Case: SOT-363, Molded Plastic
*Case Material-UL Flammability Rating 94V-0
*Terminals: Solderable per MIL-STD-202, Method 208
*Weight: 0.006 grams(approx.)

Maximum Ratings (TA=25 C Unless Otherwise Specified)

Rating Symbol Value Unit
Drain-Source Voltage VDS 60 V
Drain-Gate Voltage R GS <1.0MΩ
_ VDGR 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (TA=25 C) ID 115 mA
Power Dissipation (TA=25 C) PD 200 mW
Maximax Junction-to-Ambient R θJA 625 C/W

Operating Junction and Storage

TJ, Tstg -55 to 150 C
Temperature Range

Device Marking
2N7002DW=

Note 1:
Pulse Width Limited by Maximum Junction Temperature

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 2N7002DW
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS 60 70 - V
VGS=0V, ID=10 uA
Gate-Threshold Voltage VGS (th) 1.5
VDS=V GS , ID =-250uA 1.0 2.0 V

Gate-body Leakage IGSS +

- - _ 10 nA
VGS= _+20V, VDS=0V
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V @ Tc=25 C IDSS - - 1.0 uA
VDS=60V, VGS=0V @ Tc=125 C - - 500
On-State Drain Current ID (on) 0.5 1.0 - A
VGS=10V, VDS=7.5V
Drain-Source On-Resistance
VGS=5V, ID=0.05A @ Tj=25 C RDS (on) - 3.2 7.5 Ω
VGS=10V, ID=0.5A @ Tj =125 C - 4.4 13.5
Forward Transconductance gfs
VDS=10V, ID=0.2A 80 - - mS

Dynamic
Input Capacitance
VDS=25V, VGS=0V, f=1MHZ
Ciss - 22 50

Output Capacitance Coss 25

VDS=25V, VGS=0V, f=1MHZ
- 11
PF
Reverse Transfer Capacitance Crss
VDS=25V, VGS=0V, f=1MHZ - 2.0 5.0

Switching
Turn-On Time
VDD=30V, RL=150 Ω ,ID=0.2A td(on) - 7.0 20 nS
VGEN=10V, RGEN=25 Ω
Turn-Off Time
VDD=30V, RL=150 Ω, ID=0.2A td(off ) - 11 20 nS
VGEN=10V, RGEN=25 Ω

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 2N7002DW

1.0 7
V GS = 10V
9.0V T j = 25°C
8.0V
7.0V
6.5V 6
6.0V

ON-RESIST ANCE
0.8 5.0V
I D , DRAIN-SOURCE CURRENT (A)

4.5V
4.0V
3.5V 5

R DS(ON) , NORMALIZED
3.0V
2.5V 5.5V V GS = 5.0V
0.6 2.0/1.0V
4
5.0V
3

DRAIN-SOURCE
0.4 V GS = 10V

0.2
1

0
0
0 1 2 3 4 5
0 0.2 0.4 0.6 0.8 1.0

V DS , DRAIN-SOURCE V OLTAGE (V) I D , DRAIN CURRENT (A)

FIG.1 On-Region Characteristics FIG.2 On-Resistance vs Drain Current

2.0 6

5
ON-RESIST ANCE

ON-RESIST ANCE

1.5
V GS = 10V , I D = 0.5A
R DS(ON) , NORMALIZED

R DS(ON) , N RMALIZED

4
I D = 50mA I D = 500mA
V GS = 5.0V , I D = 0.05A
1.0 3
DRAIN-SOURCE

DRAIN-SOURCE

2
0.5
1

0 0
-55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18

Tj , JUNCTION TEMPERA TURE (°C) V GS , GA TE TO SOURCE VOL TAGE (V)

FIG.3 On-Resistance vs Junction Temperature FIG.4 On-Resistance vs. Gate-Source Voltage

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