BT131 Series
Triacs
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope, intended
for use in general purpose BT131- 500 600
bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V
control applications. These devices IT(RMS) RMS on-state current 1 1 A
are intended to be interfaced directly ITSM Non-repetitive peak on-state current 16 16 A
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - TO92 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 2
T2 T1
2 gate
3 main terminal 1
3 2 1 G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600
VDRM Repetitive peak off-state - 5001 6001 V
voltages
IT(RMS) RMS on-state current full sine wave; Tlead ≤51 ˚C - 1 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 16 A
t = 16.7 ms - 17.6 A
I2t I2t for fusing t = 10 ms - 1.28 A2s
dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
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BT131 Series
Triacs
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-lead Thermal resistance full cycle - - 60 K/W
junction to lead half cycle - - 80 K/W
Rth j-a Thermal resistance pcb mounted;lead length = 4mm - 150 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 0.4 3 mA
T2+ G- - 1.3 3 mA
T2- G- - 1.4 3 mA
T2- G+ - 3.8 7 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 1.2 5 mA
T2+ G- - 4.0 8 mA
T2- G- - 1.0 5 mA
T2- G+ - 2.5 8 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 1.3 5 mA
VT On-state voltage IT = 2.0 A - 1.2 1.5 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.2 0.3 - V
ID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 5 15 - V/µs
off-state voltage exponential waveform; RGK = 1 kΩ
tgt Gate controlled turn-on ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs
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BT131 Series
Triacs
Ptot / W BT132D
Tmb(max) / C IT(RMS) / A BT132D
1.4 41 1.2
1.2 =180 53 51 C
1
1
120
1 65
0.8
90
0.8 77
60 0.6
0.6 89
30
0.4
0.4 101
0.2
0.2 113
00 125 0
0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
0
IT(RMS) / A Tlead / C
Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus lead temperature Tlead.
ITSM / A BT132D IT(RMS) / A BT132D
1000 3
IT ITSM
2.5
T time
Tj initial = 25 C max 2.0
100 1.5
dI T/dt limit 1
T2- G+ quadrant 0.5
10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s
Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tlead ≤ 51˚C.
ITSM / A BT136 VGT(Tj)
20 VGT(25 C) BT136
1.6
IT I TSM
time
1.4
15 T
Tj initial = 25 C max
1.2
10 1
0.8
5
0.6
0 0.4
10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C
Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.
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BT131 Series
Triacs
IGT(Tj) IT / A BT134W
BT131 2
IGT(25 C)
3 Tj = 125 C
T2+ G+ Tj = 25 C
T2+ G-
2.5 1.5
T2- G-
Vo = 1.0 V
T2- G+
2 Rs = 0.21 Ohms
typ
1
1.5 max
1
0.5
0.5
0 0
-50 0 50 100 150 0 0.5 1 1.5 2
Tj / C VT / V
Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) Zth j-sp (K/W) BT134W
IL(25 C) TRIAC 100
3
2.5 10
2 unidirectional
1 bidirectional
1.5
P tp
D
1
0.1
0.5 t
0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-lead, versus
versus junction temperature Tj. pulse width tp.
IH(Tj) dVD/dt (V/us)
1000
IH(25C) TRIAC
3
2.5
100
2
1.5
1 10
0.5
0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,
versus junction temperature Tj. dVD/dt versus junction temperature Tj.
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BT131 Series
Triacs
MECHANICAL DATA
Dimensions in mm
2.54
Net Mass: 0.2 g
0.66
0.56 1.6
4.8 max 4.2 max
5.2 max
12.7 min
0.48 0.40
0.40 min
321
Fig.13. TO92 ; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
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