SEMICONDUCTOR KRC110~KRC114
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B C
FEATURES
・With Built-in Bias Resistors.
・Simplify Circuit Design.
A
・Reduce a Quantity of Parts and Manufacturing Process.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
D 0.45
J
E 1.00
F 1.27
EQUIVALENT CIRCUIT
G 0.85
H 0.45
C H J _ 0.50
14.00 +
F F K 0.55 MAX
L 2.30
R1 M 0.45 MAX
B 1 2 3
N 1.00
C
L
M
1. EMITTER
2. COLLECTOR
3. BASE
E
TO-92
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃
2009. 2. 25 Revision No : 0 1/4
KRC110~KRC114
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC110 - 0.025 -
KRC111 - 0.03 -
Rise
KRC112 tr - 0.3 -
Time
KRC113 - 0.06 -
KRC114 - 0.11 -
KRC110 - 3.0 -
KRC111 VO=5V - 2.0 -
Switching Storage
KRC112 tstg VIN=5V - 6.0 - μS
Time Time
KRC113 RL=1kΩ - 4.0 -
KRC114 - 5.0 -
KRC110 - 0.2 -
KRC111 - 0.12 -
Fall
KRC112 tf - 2.0 -
Time
KRC113 - 0.9 -
KRC114 - 1.4 -
KRC110 3.29 4.7 6.11
KRC111 7 10 13
Input Resistor KRC112 R1 - 70 100 130 kΩ
KRC113 15.4 22 28.6
KRC114 32.9 47 61.1
Note : * Characteristic of Transistor Only.
2009. 2. 25 Revision No : 0 2/4
KRC110~KRC114
h FE - I C V CE(sat) - I C
KRC110 KRC110
COLLECTOR-EMITTER SATURATION
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC111 KRC111
2
COLLECTOR-EMITTER SATURATION
2k
IC /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC112 KRC112
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
DC CURRENT GAIN h FE
1k 1
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2009. 2. 25 Revision No : 0 3/4
KRC110~KRC114
h FE - I C VCE(sat) - I C
KRC113 KRC113
2k 2
COLLECTOR-EMITTER SATURATION
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C V CE(sat) - I C
KRC114 KRC114
2k 2
COLLECTOR-EMITTER SATURATION
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
VCE =5V
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2009. 2. 25 Revision No : 0 4/4
