SEMICONDUCTOR KTA1266

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
B C

FEATURES
Excellent hFE Linearity

A
: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS
E A 4.70 MAX
K
Low Noise : NF=1dB(Typ.). at f=1kHz. G B 4.80 MAX
D C 3.70 MAX
Complementary to KTC3198. D 0.45

J
E 1.00
F 1.27
G 0.85
H 0.45
H J _ 0.50
14.00 +
F F K 0.55 MAX
MAXIMUM RATING (Ta=25 ) L 2.30
M 0.45 MAX
CHARACTERISTIC SYMBOL RATING UNIT N 1.00
1 2 3

C
L

M
Collector-Base Voltage VCBO -50 V
1. EMITTER
Collector-Emitter Voltage VCEO -50 V 2. COLLECTOR
3. BASE
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150 mA
TO-92
Base Current IB -50 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
hFE(1) (Note) VCE=-6V, IC=-2mA 70 - 400
DC Current Gain
hFE(2) VCE=-6V, IC=-150mA 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V
Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-10mA - - -1.1 V
Transition Frequency fT VCE=-10V, IC=-1mA 80 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 7.0 pF
Base Intrinsic Resistance rbb' VCB=-10V, IE=1mA, f=30MHz - 30 -
Noise Figure NF VCE=-6V, IC=-0.1mA, Rg=10k , f=1kHz - 1.0 10 dB
Note : hFE(1) Classification O:70 140, Y:120 240, GR:200 400

2002. 9. 12 Revision No : 2 1/2

 KTA1266

I C - VCE h FE - I C
-240 3k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)

-2.0 Ta=25 C
-200

DC CURRENT GAIN h FE
-1.5 1k
-160
-1.0 500
Ta=100 C V
-120 300 CE
=-
6V
-0.5 Ta=25 C
-80 Ta=-25 C VC
100 E =-
1V
IB =-0.2mA
-40
50
0
0 30
0 -1 -2 -3 -4 -5 -6 -7 -0.1 -0.3 -1 -3 -10 -30 -100 -300

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)

VCE(sat) - I C fT - IC
-1k 3k
COLLECTOR-EMITTER SATURATION

TRANSITION FREQUENCY f T (MHz)

COMMON EMITTER COMMON EMITTER

-500 I C /I B =10 VCE =-10V
Ta=25 C
VOLTAGE VCE(sat) (mV)

-300 1k

500
-100 300
C
00
-50 =1
Ta
-30 Ta=25 C 100
Ta=-25 C
50
-10 30
-0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.3 -1 -3 -10 -30 -100 -300

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

I B - VBE Pc - Ta
-1k 700
COLLECTOR POWER DISSIPATION

COMMON EMITTER
-300 VCE =-6V 600
BASE CURRENT I B (µA)

-100 500
00 C

25 C
5 C

P C (mW)

-30 400
Ta=2
Ta=1

Ta=-

-10 300

-3 200

-1 100

-0.3 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0 25 50 75 100 125 150 175

BASE-EMITTER VOLTAGE VBE (V) AMBIENT TEMPERATURE Ta ( C)

2002. 9. 12 Revision No : 2 2/2