SEMICONDUCTOR KTB1369

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

HIGH VOLTAGE APPLICATION

TV, MONITOR VERTICAL OUTPUT APPLICATION A C
DRIVER STAGE APPLICATION DIM MILLIMETERS
U

F
COROR TV CLASS B SOUND OUTPUT APPLICATION A 10.30 MAX

P
E B 15.30 MAX
C 2.70Ź0.30
S D

B
0.85 MAX
FEATURES

G
E Ѹ3.20Ź0.20
F 3.00Ź0.30
ᴌHigh Breakdown Voltage : VCEO=-180V(Min.)
G 12.30 MAX
ᴌHigh Transition Frequency : fT=100MHz(Typ.) T R H 0.75 MAX
L L J 13.60Ź0.50
ᴌHigh Current : IC(max)=-2A.

K
K 3.90 MAX
L 1.20
ᴌComplementary to KTD2061. M
M 1.30
V

J
D D N 2.54
O 4.50Ź0.20
P 6.80
Q 2.60Ź0.20
N N R 10Ɓ
H
MAXIMUM RATING (Ta=25ᴱ) T T
S 25Ş
T 5Ş
CHARACTERISTIC SYMBOL RATING UNIT U 0.5
V 2.60Ź0.15

O
1 2 3
Collector-Base Voltage VCBO -200 V

Q
1. BASE
2. COLLECTOR
Collector-Emitter Voltage VCEO -180 V 3. EMITTER

Emitter-Base Voltage VEBO -5 V

Collector Current IC -2 A TO-220IS
Base Current IB -0.2 A
Collector Power Dissipation (Tc=25ᴱ) PC 20 W
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-200V, IE=0 - - -1.0 ỌA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 ỌA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -180 - - V
DC Current Gain hFE VCE=-10V, IC=-400mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -1.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-10V, IC=-400mA - 100 - MHz
Note : hFE Classification O:70ᴕ140 , Y:120ᴕ240

1999. 6. 24 Revision No : 2 1/2

 KTB1369

I C - VCE h FE - I C
-1.0 1k
COLLECOTR CURRENT I C (A)

I B =-8mA 500
-0.8

DC CURRENT GAIN h FE
I B =-7mA 300

-0.6 I B =-6mA
VCE =-10V
I B =-5mA
100
I B =-4mA
-0.4
50
I B =-3mA
I B =-2mA
30
-0.2
I B =-1mA

0 10
0 -10 -20 -30 -40 -50 -0.01 -0.03 -0.1 -0.3 -1 -3 -10

COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)

VCE(sat) ,V BE(sat) - I C SAFE OPERATING AREA

SATURATION VOLTAGE VBE(sat) ,VCE(sat) (V)

-10
-10
COLLECTOR CURRENT I C (A)

-5 IC =10I B -5
-3
-3
VBE(sat) Th * 1mS
-1 erm
al
-0.5 lim DC
-0.3 -1 ita
tio
n
S/
-0.5 * SINGLE B
lim
NONREPETITIVE
-0.1 PULSE Tc=25 C ita
VCE(sat) -0.3 tio
-0.05 CURVES MUST BE n
-0.03 DERATED UNEARLY
WITH INCREASE IN
TEMPERATURE
-0.01 -0.1
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 -5 -10 -30 -50 -100 -300

COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V)

Pc - Ta
COLLECTOR POWER DISSIPATION PC (W)

40

30

20

10

0
0 50 100 150

CASE TEMPERATURE Ta ( C)

1999. 6. 24 Revision No : 2 2/2

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