SEMICONDUCTOR KTA1664

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

HIGH CURRENT APPLICATION.

FEATURES A
C
ᴌ1W (Mounted on Ceramic Substrate).
H
ᴌSmall Flat Package. G

ᴌComplementary to KTC4376.

B
J

E
DIM MILLIMETERS
A 4.70 MAX
D D B _ 0.20
2.50 +
K C 1.70 MAX
MAXIMUM RATING (Ta=25ᴱ) F F
D 0.45+0.15/-0.10
E 4.25 MAX
_ 0.10
CHARACTERISTIC SYMBOL RATING UNIT F 1.50 +
G 0.40 TYP
H 1.75 MAX
Collector-Base Voltage VCBO -35 V 1 2 3
J 0.75 MIN
K 0.5+0.10/-0.05
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V 1. BASE
2. COLLECTOR (HEAT SINK)
Collector Current IC -800 mA
3. EMITTER

Base Current IB -160 mA

PC 500 mW
Collector Power Dissipation
PC* 1 W SOT-89
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
PC* : KTA1664 mounted on ceramic substrate (250mm x0.8t) 2

Marking
h FE Rank Lot No.

Type Name
R

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V
hFE(1) (Note) VCE=-1V, IC=-100mA 100 - 320
DC Current Gain
hFE(2) VCE=-1V, IC=-700mA 35 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-20mA - - -0.7 V
Base-Emitter Voltage VBE VCE=-1V, IC=-10mA -0.5 - -0.8 V
Transition Frequency fT VCE=-5V, IC=-10mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 19 - pF
Note : hFE Classification O:100ᴕ200, Y:160ᴕ320

1998. 6. 15 Revision No : 2 1/2

 KTA1664

I C - V CE h FE - I C
-800 1k
A
-7m
COLLECTOR CURRENT I C (mA)

-6mA COMMON EMITTER

A

500
0m

DC CURRENT GAIN h FE
Ta=25 C
-1

-5mA Ta=100 C
-600 300
-4mA Ta=25 C

-3mA Ta=-25 C
-400 100
-2mA
50
-200 I B=-1mA 30
COMMON EMITTER
VCE =-1V
0mA
0 10
0 -2 -4 -6 -8 -10 -1 -3 -10 -30 -100 -300 -1k

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)

VCE(sat) - I C I C - V BE
-800
COLLECTOR-EMITTER SATURATION

-1 COMMON
COLLECTOR CURRENT I C (mA)

COMMON EMITTER
EMITTER
-0.5 IC /I B =25
VCE =-1V
VOLTAGE VCE(sat) (V)

-0.3 -600

C
Ta=25 C

Ta=-25 C
Ta=100
-400
-0.1
10 0 C
Ta= Ta=25 C
-0.05
Ta=-25 C -200
-0.03

0
-0.01
0 -0.4 -0.8 -1.2 -1.6
-1 -3 -10 -30 -100 -300 -1k

COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)

SAFE OPERATING AREA Pc - Ta

COLLECTOR POWER DISSIPATION PC (W)

-3k 1.2
I C MAX(PULSE) 1 MOUNTED ON CERAMIC
COLLECTOR CURRENT I C (mA)

1
10
1m

I C MAX SUBSTRATE(250mm 2 x0.8t)

-1k m 1.0
s

(CONTINUOUS) s 2 Ta=25 C
10
-500 DC 0m
OP s
-300 ER 0.8
AT
IO
N
-100 0.6 2
-50 SINGLE NONREPE-
-30 TITIVE PULSE 0.4
Ta=25 C
CURVES MUST BE DERATED
-10 LINEARLY WITH INCREASE 0.2
-5 IN TEMPERATURE
-3 0
-0.3 -1 -3 -10 -30 -100 -300 0 20 40 60 80 100 120 140 160

COLLECTOR-EMITTER VOLTAGE V CE (V) AMBIENT TEMPERATURE Ta ( C)

1998. 6. 15 Revision No : 2 2/2