BUK75/7610-55AL

N-channel TrenchMOS™ standard level FET

Rev. 01 — 31 March 2005 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically
optimized for linear operation.

1.2 Features
■ TrenchMOS™ technology ■ Q101 compliant
■ 175 °C rated ■ Stable operation in linear mode.

1.3 Applications
■ Automotive systems ■ Repetitive clamped inductive
switching
■ DC linear motor control ■ 12 V and 24 V loads.

1.4 Quick reference data

■ EDS(AL)S ≤ 1.1 J ■ RDSon = 8.5 mΩ (typ)
■ ID ≤ 75 A ■ Ptot ≤ 300 W.

2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
mb mb D
2 drain (D)
3 source (S)
G
mb mounting base;
connected to drain (D) mbb076 S
2
1 3

SOT404 (D2PAK)

1 2 3

SOT78 (TO-220AB)
Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BUK7510-55AL TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
BUK7610-55AL D2PAK Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead SOT404
cropped)

4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 kΩ - 55 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 °C; VGS = 10 V; [1] [3] - 122 A
Figure 2 and 3 [2] - 75 A
Tmb = 100 °C; VGS = 10 V; Figure 2 [2] - 75 A
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 490 A
Ptot total power dissipation Tmb = 25 °C; Figure 1 - 300 W
Tstg storage temperature −55 +175 °C
Tj junction temperature −55 +175 °C
Source-drain diode
IDR reverse drain current (DC) Tmb = 25 °C [1] [3] - 122 A
[2] - 75 A
IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 490 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source unclamped inductive load; ID = 75 A; - 1.1 J
avalanche energy VDS ≤ 55 V; RGS = 50 Ω; VGS = 10 V;
starting at Tj = 25 °C
EDS(AL)R repetitive drain-source avalanche - [4] -
energy

[1] Current is limited by power dissipation chip rating.

[2] Continuous current is limited by package.
[3] Refer to document 9397 750 12572 for further information.
[4]
a) Max value not quoted. Repetitive rating defined in Figure 16.
b) Single-shot avalanche rating limited by Tj(max) of 175 °C.
c) Repetitive avalanche rating limited by Tj(avg) of 170 °C.
d) Refer to application note AN10273 for further information.

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 2 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

03aa16 003aaa726
120 150

Pder ID
(%) (A)

80 100

(1)

40 50

0 0
0 50 100 150 200 0 50 100 150 200
Tmb (°C) Tmb (°C)

P tot VGS ≥ 5 V
P der = ----------------------- × 100 %
P °
(1) Capped at 75 A due to package.
tot ( 25 C )

Fig 1. Normalized total power dissipation as a Fig 2. Continuous drain current as a function of
function of mounting base temperature. mounting base temperature.

003aaa737
103
Limit RDSon = VDS / ID tp = 10 µ s
ID
(A)

102 100 µ s
(1)

1 ms
DC
10 ms
10
100 ms

1
1 10 VDS (V) 102

Tmb = 25 °C; IDM is single pulse.

(1) Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 3 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to mounting base - - 0.5 K/W
Rth(j-a) thermal resistance from junction to ambient
SOT78 (TO-220AB) vertical in free air - 60 - K/W
SOT404 (D2-PAK) mounted on a - 50 - K/W
printed-circuit board;
minimum footprint;
vertical in still air

5.1 Transient thermal impedance

003aaa734
1

Zth(j-mb)
(K/W) δ = 0.5

0.2
10-1
0.1

0.05

0.02
tp
-2 P δ=
10 T

single shot tp t
T
10-3
10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 4 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V
Tj = 25 °C 55 - - V
Tj = −55 °C 50 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C 2 3 4 V
Tj = 175 °C 1 - - V
Tj = −55 °C - - 4.4 V
IDSS drain-source leakage current VDS = 55 V; VGS = 0 V
Tj = 25 °C - 0.05 10 µA
Tj = 175 °C - - 500 µA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V - 2 100 nA
RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Figure 6 and 8
Tj = 25 °C - 8.5 10 mΩ
Tj = 175 °C - - 20 mΩ
Dynamic characteristics
Qg(tot) total gate charge ID = 25 A; VDD = 44 V; VGS = 10 V; - 124 - nC
Qgs gate-source charge Figure 14 - 22 - nC
Qgd gate-drain (Miller) charge - 50 - nC
Vplat plateau voltage - 5 - V
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 4710 6280 pF
Coss output capacitance Figure 12 - 980 1180 pF
Crss reverse transfer capacitance - 560 770 pF
td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; - 33 - ns
tr rise time VGS = 10 V; RG = 10 Ω - 117 - ns
td(off) turn-off delay time - 132 - ns
tf fall time - 95 - ns
Ld internal drain inductance from drain lead 6 mm from package to - 4.5 - nH
center of die
from contact screw on mounting base to - 3.5 - nH
center of die
from upper edge of drain mounting base - 2.5 - nH
to center of die SOT404
Ls internal source inductance from source lead to source bond pad - 7.5 - nH
Source-drain diode
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 - 0.85 1.2 V
trr reverse recovery time IS = 20 A; dIS/dt = −100 A/µs; - 73 - ns
Qr recovered charge VGS = 0 V; VR = 30 V - 430 - nC

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 5 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

003aaa729 003aaa730
400 18

ID
RDSon
(A) 20 (mΩ)
18
300
16
14 14
VGS (V) = 10
12
9.5
200 9
8.5
8
7.5 10
7
100
6.5
6
5.5
5
4.5
0 6
0 2 4 6 8 10 5 10 15 VGS (V) 20
VDS (V)

Tj = 25 °C Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values. of gate-source voltage; typical values.

003aaa731 03ne89
20 2
7 8 9 10
RDSon
a
(mΩ)

15 1.5

10 1
VGS (V) = 20

5 0.5

0 0
0 100 200 300 400 -60 0 60 120 180
ID (A) Tj (°C)

Tj = 25 °C R DSon
a = -----------------------------
-
R DSon ( 25 °C )

Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of drain current; typical values. factor as a function of junction temperature.

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 6 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

03aa32 03aa35
5 10-1
VGS(th) ID
(V) (A)
4 max 10-2

min typ max

3 typ 10-3

2 min 10-4

1 10-5

0 10-6
-60 0 60 120 180 0 2 4 6
Tj (°C) VGS (V)

ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = VGS

Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature. gate-source voltage.

003aaa732 003aaa738
40 8000
gfs C
(S) (pF) Ciss

35 6000

Coss
30 4000

C
rss
25 2000

20 0
0 20 40 60 ID (A) 80 10-1 1 10 102
VDS (V)

Tj = 25 °C; VDS = 25 V VGS = 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of Fig 12. Input, output and reverse transfer capacitances
drain current; typical values. as a function of drain-source voltage; typical
values.

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 7 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

003aaa733 003aaa735
150 10
VGS
ID (V)
(A) 8
VDD = 14 V
100
VDD = 44 V
6

4
50

Tj = 175 °C Tj = 25 °C

0 0
0 2 4 6 8 10 0 50 100 150
VGS (V) QG (nC)

VDS = 25 V Tj = 25 °C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a Fig 14. Gate-source voltage as a function of gate
function of gate-source voltage; typical values. charge; typical values.

003aaa736 003aaa739
150 102 (1)

IS IAV Tj = 25 ˚C
(A) (A) (2)

100 10

(3) 150 ˚C

Tj = 25 °C
50 1
Tj = 175 °C

0 10-1
0.0 0.3 0.6 0.9 1.2 10-2 10-1 1 tAV (ms) 10
VSD (V)

VGS = 0 V See Table note 4 of Table 3 Limiting values.

(1) Single-shot.
(2) Single-shot.
(3) Repetitive.
Fig 15. Source (diode forward) current as a function of Fig 16. Single-shot and repetitive avalanche rating;
source-drain (diode forward) voltage; typical avalanche current as a function of avalanche
values. period.

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 8 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

E A
p A1

q mounting
D1 base

L1(1) L2

Q
b1
L

1 2 3

b c

e e

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

L2
UNIT A A1 b b1 c D D1 E e L L1(1) p q Q
max.
4.5 1.39 0.9 1.3 0.7 15.8 6.4 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.27 0.6 1.0 0.4 15.2 5.9 9.7 13.5 2.79 3.6 2.7 2.2

Note
1. Terminals in this zone are not tinned.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

01-02-16
SOT78 3-lead TO-220AB SC-46
03-01-22

Fig 17. Package outline SOT78 (TO-220AB).

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 9 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead cropped) SOT404

E A1

D1 mounting
base

HD

Lp
1 3

b c

e e Q

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

D
UNIT A A1 b c D1 E e Lp HD Q
max.

mm 4.50 1.40 0.85 0.64 11 1.60 10.30 2.54 2.90 15.80 2.60
4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

04-10-13
SOT404
05-02-11

Fig 18. Package outline SOT404 (D2-PAK).

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 10 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

8. Mounting

10.85
10.60
10.50
1.50
7.50
7.40
1.70

2.25 2.15

8.275
8.15 8.35
1.50

4.60

0.30

4.85
5.40

7.95 8.075

3.00 0.20

1.20
solder lands 1.30
1.55
solder resist
5.08 MSD057

occupied area

solder paste

Dimensions in mm.
Fig 19. Reflow soldering footprint for SOT404.

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 11 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

9. Revision history
Table 6: Revision history
Document ID Release Data sheet Change Doc. number Supersedes
date status notice
BUK75_7610_55AL_1 20050331 Product - 9397 750 14362 -
data sheet

9397 750 14362 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet Rev. 01 — 31 March 2005 12 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

10. Data sheet status

Level Data sheet status [1] Product status [2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

11. Definitions customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is Right to make changes — Philips Semiconductors reserves the right to
extracted from a full data sheet with the same type number and title. For make changes in the products - including circuits, standard cells, and/or
detailed information see the relevant data sheet or data handbook. software - described or contained herein in order to improve design and/or
Limiting values definition — Limiting values given are in accordance with performance. When the product is in full production (status ‘Production’),
the Absolute Maximum Rating System (IEC 60134). Stress above one or relevant changes will be communicated via a Customer Product/Process
more of the limiting values may cause permanent damage to the device. Change Notification (CPCN). Philips Semiconductors assumes no
These are stress ratings only and operation of the device at these or at any responsibility or liability for the use of any of these products, conveys no
other conditions above those given in the Characteristics sections of the licence or title under any patent, copyright, or mask work right to these
specification is not implied. Exposure to limiting values for extended periods products, and makes no representations or warranties that these products are
may affect device reliability. free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com

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Product data sheet Rev. 01 — 31 March 2005 13 of 14

Philips Semiconductors BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
5.1 Transient thermal impedance . . . . . . . . . . . . . . 4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information . . . . . . . . . . . . . . . . . . . . 13

© Koninklijke Philips Electronics N.V. 2005

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
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consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 31 March 2005
Document number: 9397 750 14362
Published in The Netherlands