RQA0009SXAQS

Silicon N-Channel MOS FET

REJ03G1566-0100
Rev.1.00
Jul 04, 2007

Features
• High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(VDS = 6 V, f = 520 MHz)
• Compact package capable of surface mounting
• Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)

Outline

RENESAS Package code: PLZZ0004CA-A

(Package Name : UPAK R )
3

1
2 1. Gate
3
2. Source
1 3. Drain
4 4. Source

2, 4

Note: Marking is “SX”.

*UPAK is a trademark of Renesas Technology Corp.

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 16 V
Gate to source voltage VGSS ±5 V
Drain current ID 3.2 A
Channel dissipation Pchnote 15 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Value at Tc = 25°C

This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min. Typ Max. Unit Test Conditions
Zero gate voltage drain current IDSS — — 15 µA VDS = 16 V, VGS = 0
Gate to source leak current IGSS — — ±2 µA VGS = ±5 V, VDS = 0
Gate to source cutoff voltage VGS(off) 0.15 0.5 0.8 V VDS = 6 V, ID = 1 mA
Forward Transfer Admittance |yfs| — 3.2 — S VDS = 6 V, ID = 1.6 A
Input capacitance Ciss — 76 — pF VGS = 5 V, VDS = 0, f = 1 MHz
Output capacitance Coss — 40 — pF VDS = 6 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss — 3.5 — pF VDG = 6 V, VGS = 0, f = 1 MHz
Output Power Pout — 37.8 — dBm VDS = 6 V, IDQ = 180 mA
— 6.0 — W f = 520 MHz,
Power Added Efficiency PAE — 65 — % Pin = +25 dBm (316 mW)
Output Power Pout — 35.2 — dBm VDS = 4.8 V, IDQ = 300 mA
— 3.3 — W f = 465 MHz,
Power Added Efficiency PAE — 60 — % Pin = +17 dBm (50 mW)

Main Characteristics

Maximum Channel Power

Dissipation Curve Typical Output Characteristics
Pulse Test
Channel Power Dissipation Pch (W)

20 4
2.0 V
1.75 V
Drain Current ID (A)

15 3
1.5 V

10 2
1.25 V

5 1
VGS = 1.0 V

0 0
0 50 100 150 200 0 2 4 6 8 10

Case Temperature TC (°C) Drain to Source Voltage VDS (V)

Forward Transfer Admittance

Typical Transfer Characterisitics vs. Drain Current
Forward Transfer Admittance |yfs| (S)

Forward Transfer Admittance |yfs| (S)

4 10.0
VDS = 6 V VDS = 6 V
Pulse Test Pulse Test
Drain Current ID (A)

|yfs| ID
2 1.0

0 0.1
0 0.5 1.0 1.5 2.0 0.1 1.0 10.0

Gate to Source Voltage VGS (V) Drain Current ID (A)

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

Input Capacitance vs. Output Capacitance vs.

Gate to Source Voltage Drain to Source Voltage
90 1000

Output Capacitance Coss (pF)

Input Capacitance Ciss (pF)

80

70
100
60

50
VDS = 0 VGS = 0
f = 1 MHz f = 1 MHz
40 10
-5 -4 -3 -2 -1 0 1 2 3 4 5 0.1 1 10

Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V)

Reverse Transfer Capacitance vs.

Drain to Gate Voltage MSG, MAG vs. Frequency
Reverse Transfer Capacitance Crss (pF)

Maximum Available Gain MAG (dB)

100 Maximum Stable Gain MSG (dB) 30
VGS = 0 VDS = 6 V
f = 1 MHz 25 ID = 180 mA
MSG
20

10 15
MAG
10

1 0
0.1 1 10 0 500 1000 1500 2000

Drain to Gate Voltage VDG (V) Frequency f (MHz)

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

Evaluation Circuit (f = 520 MHz)

C6 C5 C12 C13
VG VD

R2

C4 C11

R1 L1

L2 L3 C10 50 Ω
50 Ω C1
OUT
IN
C7 C8 C9
C2 C3

C1, C4, C10, C11 100 pF Chip Capacitor

C2 22 pF Chip Capacitor
C3 5 pF Chip Capacitor
C5, C12 1000 pF Chip Capacitor
C6, C13 1 µF Chip Tantalum Capacitor
C7 18 pF Chip Capacitor
C8 10 pF Chip Capacitor
C9 7 pF Chip Capacitor
L1 8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
L2 1 nH Chip Inductor
L3 1.8 nH Chip Inductor
R1 670 Ω Chip Resistor
R2 6.8 kΩ Chip Resistor

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

Output Power, Drain Current Power Gain, Power Added Efficiency

vs. Input Power vs. Input Power
40 1.6 25 100

Power Added Efficiency PAE (%)

Pout (dBm)

35 1.4
Pout

Power Gain PG (dB)

20 80

Drain Current ID (A)

30 1.2 PG

25 1.0
15 60
ID
20 0.8 PAE
Output Power

15 0.6 10 40

10 VDS = 6 V 0.4
5 VDS = 6 V 20
f = 520 MHz f = 520 MHz
5 0.2
IDQ = 180 mA IDQ = 180 mA
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

Input Power Pin (dBm) Input Power Pin (dBm)

Power Gain, Power Added Efficiency

vs. Frequency Input Return Loss vs. Frequency
20 80 0
Power Added Efficiency PAE (%)

Input Return Loss RL (dB)

PAE
Power Gain PG (dB)

15 60 -5

PG
10 40 -10

5 VDS = 6 V 20 -15 VDS = 6 V

IDQ = 180 mA IDQ = 180 mA
Pin = 25 dBm Pin = 25 dBm
0 0 -20
450 470 490 510 530 550 450 470 490 510 530 550

Frequency f (MHz) Frequency f (MHz)

Power Gain, Power Added Efficiency, Power Gain, Power Added Efficiency
vs. Drain to Source Voltage vs. Idling Current
20 70 20 80
Power Added Efficiency PAE (%)

Power Added Efficiency PAE (%)

PAE
Power Gain PG (dB)
Power Gain PG (dB)

15 60 15 75
PG

PG
10 50 10 PAE 70

5 40 5 65
IDQ = 180 mA VDS = 6 V
f = 520 MHz f = 520 MHz
Pin = 25 dBm Pin = 25 dBm
0 30 0 60
3 4 5 6 7 8 9 0 0.1 0.2 0.3 0.4 0.5

Drain to Source Voltage VDS (V) Idling Current IDQ (A)

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

Evaluation Circuit (f = 465 MHz)

C7 C6 C13 C14
VG VD

R2

C5 C12

R1 L3

L1 L2 C11 50 Ω
50 Ω C1
RFOUT
RFIN

C8 C9 C10
C2 C3 C4

C1, C5, C11, C12 100 pF Chip Capacitor

C2, C8 22 pF Chip Capacitor
C3 15 pF Chip Capacitor
C4, C9, C10 10 pF Chip Capacitor
C6, C13 2200 pF Chip Capacitor
C7, C14 1 µF / 35 V Chip Tantalum Capacitor
L1 1 nH Chip Inductor
L2 1.8 nH Chip Inductor
L3 8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
R1 670 Ω Chip Resistor
R2 6.8 kΩ Chip Resistor

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

Output Power, Drain Current Power Gain, Power Added Efficiency

vs. Input Power vs. Input Power
40 1.6 25 100

Power Added Efficiency PAE (%)

35 1.4
Output Power Pout (dBm)

PG

Power Gain PG (dB)

Pout 20 80

Drain Current ID (A)

30 1.2

25 1.0
ID 15 60
20 0.8

15 0.6 10 40
PAE
10 0.4
VDS = 4.8 V 5 VDS = 4.8 V 20
5 IDQ = 300 mA IDQ = 300 mA
0.2
f = 465 MHz f = 465 MHz
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

Input Power Pin (dBm) Input Power Pin (dBm)

Power Gain, Power Added Efficiency

vs. Frequency Input Return Loss vs. Frequency
20 80 0
Power Added Efficiency PAE (%)

Input Return Loss RL (dB)

-5
Power Gain PG (dB)

19 70
PAE -10

18 60 -15
PG

-20
17 50 VDS = 4.8 V
VDS = 4.8 V
IDQ = 300 mA -25 IDQ = 300 mA
Pin = 17 dBm Pin = 17 dBm
16 40 -30
450 455 460 465 470 475 480 450 455 460 465 470 475 480

Frequency f (MHz) Frequency f (MHz)

Power Gain, Power Added Efficiency, Power Gain, Power Added Efficiency
vs. Drain to Source Voltage vs. Idling Current
21 70 21 70
Power Added Efficiency PAE (%)

Power Added Efficiency PAE (%)

PG
20 65 20 PAE 65
Power Gain PG (dB)
Power Gain PG (dB)

19 60 19 60
PAE
18 55 18 PG 55

17 50 17 50

IDQ = 300 mA VDS = 4.8 V

16 f = 465 MHz 45 16 f = 465 MHz 45
Pin = 17 dBm Pin = 17 dBm
15 40 15 40
3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5

Drain to Source Voltage VDS (V) Idling Current IDQ (A)

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

S11 Parameter vs. Frequency S21 Parameter vs. Frequency

.8 1 90° Scale: 5 / div.

1.5
.6 120° 60°
2
.4
3
4 150° 30°
.2 5

10

0 .2 .4 .6 .8 1 1.5 2 3 45 10 180° 0°

-10

-.2 -5
-4
-150° -30°
-3
-.4
-2
-.6 -120° -60°
-.8 -1.5
-1 -90°

Test condition: Test condition:

VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step) 100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step) 1000 to 2500 MHz (100 MHz step)

S12 Parameter vs. Frequency S22 Parameter vs. Frequency

90° Scale: 0.01 / div. .8 1
1.5
120° 60° .6
2
.4
3
150° 30° 4
.2 5

10

180° 0 .2 .4 .6 .8 1 1.5 2 3 45 10
0°

-10

-.2 -5
-4
-150° -30°
-3
-.4
-2
-120° -60° -.6
-.8 -1.5
-90° -1

Test condition: Test condition:

VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step) 100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step) 1000 to 2500 MHz (100 MHz step)

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

S11 Parameter vs. Frequency S21 Parameter vs. Frequency

.8 1 90° Scale: 5 / div.

1.5
.6 120° 60°
2
.4
3
4 150° 30°
.2 5

10

0 .2 .4 .6 .8 1 1.5 2 3 45 10 180° 0°

-10

-.2 -5
-4
-150° -30°
-3
-.4
-2
-.6 -120° -60°
-.8 -1.5
-1 -90°

Test condition: Test condition:

VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step) 100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step) 1000 to 2500 MHz (100 MHz step)

S12 Parameter vs. Frequency S22 Parameter vs. Frequency

90° Scale: 0.01 / div. .8 1
1.5
120° 60° .6
2
.4
3
150° 30° 4
.2 5

10

180° 0 .2 .4 .6 .8 1 1.5 2 3 45 10
0°

-10

-.2 -5
-4
-150° -30°
-3
-.4
-2
-120° -60° -.6
-.8 -1.5
-90° -1

Test condition: Test condition:

VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step) 100 to 1000 MHz (50 MHz step)
1000 to 2500 MHz (100 MHz step) 1000 to 2500 MHz (100 MHz step)

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

S Parameter
(VDS = 6 V, IDQ = 180 mA, Zo = 50 Ω)
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.868 -154.0 9.85 88.8 0.019 1.2 0.706 -166.8
150 0.861 -159.4 5.42 77.2 0.018 -6.3 0.725 -168.9
200 0.882 -163.9 3.64 68.2 0.016 -14.1 0.755 -170.6
250 0.892 -166.8 2.64 58.5 0.016 -19.2 0.768 -170.6
300 0.899 -169.5 2.06 51.8 0.014 -22.1 0.792 -171.2
350 0.910 -171.6 1.61 45.1 0.013 -27.2 0.805 -171.5
400 0.918 -173.4 1.28 40.3 0.013 -29.3 0.827 -172.2
450 0.926 -175.2 1.04 36.0 0.011 -34.1 0.840 -173.1
500 0.932 -176.8 0.84 31.8 0.010 -33.1 0.855 -173.8
550 0.936 -178.2 0.73 28.8 0.009 -34.5 0.869 -174.6
600 0.940 -179.5 0.62 26.4 0.008 -34.6 0.880 -175.6
650 0.941 179.2 0.54 23.1 0.007 -36.5 0.892 -176.5
700 0.944 178.1 0.45 20.2 0.006 -32.7 0.901 -177.3
750 0.945 176.9 0.41 18.3 0.006 -32.0 0.906 -178.0
800 0.944 175.9 0.37 16.4 0.005 -25.3 0.915 -179.4
850 0.944 174.6 0.31 13.9 0.004 -22.3 0.919 180.0
900 0.943 173.4 0.30 12.1 0.004 -15.2 0.929 178.9
950 0.943 172.3 0.26 10.6 0.003 0.3 0.930 178.1
1000 0.946 171.1 0.23 8.6 0.003 9.1 0.936 177.2
1050 0.949 170.2 0.22 7.3 0.003 20.6 0.940 176.5
1100 0.951 169.4 0.21 6.5 0.004 36.9 0.943 175.5
1150 0.952 168.7 0.18 5.3 0.004 40.3 0.944 174.7
1200 0.952 167.8 0.18 4.3 0.004 52.0 0.950 174.1
1250 0.952 167.0 0.16 3.7 0.005 53.2 0.951 173.3
1300 0.952 166.2 0.14 2.2 0.005 56.8 0.949 172.6
1350 0.952 165.4 0.14 1.3 0.006 60.9 0.956 171.7
1400 0.952 164.6 0.13 0.8 0.006 64.0 0.958 171.0
1450 0.952 164.0 0.12 0.1 0.007 62.2 0.957 170.3
1500 0.952 163.3 0.11 -0.8 0.008 65.4 0.956 169.5
1550 0.952 162.1 0.11 -1.8 0.008 65.9 0.959 168.5
1600 0.952 160.8 0.10 -2.7 0.009 65.6 0.960 168.2
1650 0.952 159.7 0.10 -3.6 0.009 65.9 0.960 167.4
1700 0.952 158.5 0.09 -4.5 0.010 66.6 0.962 166.4
1750 0.952 157.3 0.08 -4.7 0.010 66.2 0.967 165.8
1800 0.952 156.4 0.08 -5.0 0.011 66.5 0.968 165.3
1850 0.952 155.7 0.08 -4.7 0.011 66.5 0.965 164.5
1900 0.953 154.7 0.07 -4.9 0.012 67.0 0.967 163.7
1950 0.958 153.9 0.07 -5.2 0.012 67.0 0.976 163.2
2000 0.965 153.6 0.07 -4.6 0.013 65.5 0.972 162.9
2050 0.963 153.3 0.07 -4.9 0.013 65.4 0.972 161.9
2100 0.956 152.9 0.06 -4.2 0.014 65.3 0.976 161.0
2150 0.950 152.2 0.06 -3.5 0.014 65.2 0.981 160.7
2200 0.944 151.6 0.06 -3.8 0.015 63.9 0.977 160.1
2250 0.936 150.7 0.06 -3.5 0.015 63.9 0.977 159.5
2300 0.932 149.3 0.05 -3.4 0.016 63.0 0.978 158.9
2350 0.932 148.1 0.05 -3.6 0.016 62.8 0.981 158.4
2400 0.929 147.3 0.05 -3.0 0.017 63.0 0.977 158.0
2450 0.923 146.3 0.05 -3.6 0.017 61.3 0.977 157.2
2500 0.917 144.9 0.05 -3.0 0.017 61.8 0.980 156.8

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

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RQA0009SXAQS

S Parameter
(VDS = 4.8 V, IDQ = 300 mA, Zo = 50 Ω)
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.772 -157.0 9.63 88.9 0.013 -1.0 0.776 -172.1
150 0.794 -162.8 5.54 79.0 0.013 -6.3 0.784 -173.8
200 0.812 -167.3 3.91 71.6 0.012 -11.1 0.799 -174.8
250 0.818 -170.4 2.98 64.7 0.011 -13.5 0.805 -174.8
300 0.824 -173.1 2.36 59.1 0.011 -15.2 0.818 -175.0
350 0.831 -175.0 1.92 53.6 0.011 -20.4 0.824 -175.1
400 0.836 -176.6 1.60 48.7 0.010 -21.4 0.837 -175.4
450 0.841 -178.3 1.36 44.8 0.009 -23.3 0.843 -175.8
500 0.848 -179.9 1.15 40.5 0.008 -22.9 0.859 -176.8
550 0.851 179.0 1.00 37.1 0.008 -22.2 0.868 -177.1
600 0.851 177.7 0.87 33.9 0.007 -24.8 0.874 -177.4
650 0.852 176.3 0.77 30.7 0.006 -24.2 0.887 -177.8
700 0.854 174.7 0.69 27.9 0.006 -20.5 0.896 -178.8
750 0.858 173.3 0.60 24.8 0.005 -18.2 0.901 -179.1
800 0.865 171.9 0.54 22.3 0.005 -15.1 0.905 -179.8
850 0.873 170.8 0.49 20.2 0.005 -12.2 0.911 179.5
900 0.878 169.8 0.45 17.9 0.004 -1.7 0.918 178.9
950 0.880 168.8 0.41 16.1 0.004 4.3 0.922 178.3
1000 0.882 167.7 0.37 14.2 0.004 11.2 0.932 177.8
1050 0.886 166.5 0.35 12.4 0.004 21.6 0.931 177.1
1100 0.889 165.5 0.32 10.7 0.004 29.8 0.935 176.5
1150 0.893 164.4 0.29 8.9 0.004 33.2 0.939 175.8
1200 0.898 163.3 0.27 7.5 0.004 40.9 0.944 175.1
1250 0.902 162.4 0.26 6.2 0.005 46.7 0.943 174.6
1300 0.901 161.3 0.23 4.7 0.005 50.8 0.948 174.1
1350 0.902 160.0 0.22 3.3 0.005 54.5 0.948 173.4
1400 0.904 158.7 0.21 1.8 0.006 57.8 0.954 173.1
1450 0.907 157.7 0.19 0.4 0.006 55.3 0.954 172.5
1500 0.904 156.5 0.18 -0.8 0.007 60.5 0.953 171.6
1550 0.905 155.1 0.17 -2.4 0.007 62.1 0.958 171.0
1600 0.912 153.8 0.16 -3.1 0.007 61.1 0.959 170.7
1650 0.915 152.8 0.15 -4.2 0.008 64.3 0.956 170.4
1700 0.919 151.5 0.14 -5.8 0.008 63.2 0.958 169.3
1750 0.926 149.9 0.14 -6.8 0.009 62.7 0.964 168.9
1800 0.938 148.8 0.13 -7.8 0.009 63.0 0.965 168.4
1850 0.942 147.9 0.13 -8.6 0.010 62.6 0.963 167.8
1900 0.942 146.7 0.12 -9.3 0.010 61.9 0.965 167.0
1950 0.945 145.5 0.11 -10.2 0.010 63.8 0.968 166.6
2000 0.946 144.7 0.11 -10.6 0.011 62.4 0.965 166.3
2050 0.942 143.7 0.11 -11.2 0.011 62.2 0.969 165.5
2100 0.939 142.3 0.10 -11.8 0.012 61.2 0.973 164.9
2150 0.940 140.9 0.10 -12.5 0.012 62.0 0.974 164.6
2200 0.942 139.8 0.09 -13.3 0.012 61.3 0.974 164.2
2250 0.939 138.3 0.09 -14.3 0.013 59.2 0.974 163.4
2300 0.937 136.8 0.08 -15.3 0.013 59.6 0.976 163.0
2350 0.937 135.4 0.08 -16.3 0.014 59.8 0.977 162.9
2400 0.935 134.1 0.08 -17.5 0.014 58.9 0.972 162.0
2450 0.932 132.8 0.07 -18.1 0.014 57.9 0.975 161.5
2500 0.931 131.3 0.07 -18.7 0.014 57.7 0.977 161.2

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

Page 11 of 12
RQA0009SXAQS

Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
SC-62 PLZZ0004CA-A UPAK / UPAKV 0.050g
Unit: mm

4.5 ± 0.1
1.5 ± 0.1
1.8 Max 0.44 Max (1.5)

0.4
2.5 ± 0.1
φ1

4.25 Max

(2.5)
0.53 Max

(0.2)
(0.4)
0.48 Max 0.44 Max
0.8 Min

1.5 1.5
3.0

Ordering Information
Part Name Quantity Shipping Container
RQA0009SXTL-E 1000 pcs. φ178 mm reel, 12 mm emboss taping

REJ03G1566-0100 Rev.1.00 Jul 04, 2007

Page 12 of 12
 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
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undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.

RENESAS SALES OFFICES http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510

© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.

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