2 Megabit (128 K X 16-Bit) CMOS EPROM: Distinctive Characteristics
2 Megabit (128 K X 16-Bit) CMOS EPROM: Distinctive Characteristics
Am27C2048
2 Megabit (128 K x 16-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
■ Fast access time ■ ±10% power supply tolerance standard
— Speed options as fast as 55 ns ■ 100% Flashrite programming
■ Low power consumption — Typical programming time of 16 seconds
— 100 µA maximum CMOS standby current ■ Latch-up protected to 100 mA from –1 V to
■ JEDEC-approved pinout VCC + 1 V
— Plug-in upgrade of 1 Mbit EPROM ■ Versatile features for simple interfacing
— 40-pin DIP/PDIP — Both CMOS and TTL input/output compatibility
— 44-pin PLCC — Two line control functions
■ Single +5 V power supply ■ High noise immunity
GENERAL DESCRIPTION
The Am27C2048 is a 2 Mbit, ultraviolet erasable pro- thus eliminating bus contention in a multiple bus micro-
grammable read-only memory. It is organized as 128 K processor system.
words, operates from a single +5 V supply, has a static
AMD’s CMOS process technology provides high
standby mode, and features fast single address loca-
speed, low power, and high noise immunity. Typical
tion programming. The Am27C2048 is ideal for use in
power consumption is only 125 mW in active mode,
16-bit microprocessor systems. The device is available
and 100 µW in standby mode.
in windowed ceramic DIP packages, and plastic one
time programmable (OTP) PDIP and PLCC packages. All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in
Data can be typically accessed in less than 55 ns, al-
blocks, or at random. The device supports AMD’s
lowing high-performance microprocessors to operate
Flashrite programming algorithm (100 µs pulses), re-
without any WAIT states. The device offers separate
sulting in a typical programming time of 16 seconds.
Output Enable (OE#) and Chip Enable (CE#) controls,
BLOCK DIAGRAM
VCC Data Outputs
DQ0–DQ15
VSS
VPP
Y Y
Decoder Gating
A0–A16
Address
Inputs X 2,097,152
Decoder Bit Cell
Matrix
11407G-1
CONNECTION DIAGRAMS
Top View
DIP PLCC
DU (Note 2)
PGM# (P#)
VPP 1 40 VCC
CE (E)
DQ13
DQ14
DQ15
CE# (E#) 2 39 PGM# (P#)
VCC
A16
A15
A14
VPP
DQ15 3 38 A16
DQ14 4 37 A15 6 5 4 3 2 1 44 43 42 41 40
DQ13 5 36 A14
DQ12 7 39 A13
DQ12 6 35 A13
DQ11 8 38 A12
DQ11 7 34 A12
DQ10 9 37 A11
DQ10 8 33 A11
DQ9 10 36 A10
DQ9 9 32 A10
DQ8 11 35 A9
DQ8 10 31 A9
VSS 12 34 VSS
VSS 11 30 VSS
NC 13 33 NC
DQ7 12 29 A8
DQ7 14 32 A8
DQ6 13 28 A7
27
DQ6 15 31 A7
DQ5 14 A6
DQ4 15 26 A5
DQ5 16 30 A6
DQ3 16 25 A4 DQ4 17 29 A5
18 19 20 21 22 23 24 25 26 27 28
DQ2 17 24 A3
DQ3
DQ2
DQ1
DQ0
OE# (G#)
DU (Note 2)
A0
A1
A2
A3
A4
DQ1 18 23 A2
DQ0 19 22 A1
OE# (G#) 20 21 A0
11407G-2 11407G-3
Notes:
1. JEDEC nomenclature is in parenthesis.
2. Don’t use (DU) for PLCC.
2 Am27C2048
ORDERING INFORMATION
UV EPROM Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
AM27C2048 -55 D C 5 B
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-In
VOLTAGE TOLERANCE
5 = VCC ± 5%, 55 ns only
See Product Selector Guide and Valid Combinations
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE
D = 40-Pin Ceramic DIP (CDV040)
SPEED OPTION
See Product Selector Guide and
Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am27C2048
2 Megabit (128 K x 16-Bit) CMOS UV EPROM
AM27C2048-90
AM27C2048-120
AM27C2048-200
AM27C2048-255
DC, DCB, DI, DIB
VCC = 5.0 V ± 5%
Am27C2048 3
ORDERING INFORMATION
OTP EPROM Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
AM27C2048 -55 J C 5
OPTIONAL PROCESSING
Blank = Standard Processing
VOLTAGE TOLERANCE
5 = VCC ± 5%, -55 ns only
See Product Selector Guide and
Valid Combinations
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
PACKAGE TYPE
P = 40-Pin Plastic DIP (PD 040)
J = 44-Pin Square Plastic Leaded Chip Carrier (PL 044)
SPEED OPTION
See Product Selector Guide and
Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am27C2048
2 Megabit (128 K x 16-Bit) CMOS OTP EPROM
AM27C2048-70
AM27C2048-90
AM27C2048-150
AM27C2048-200
AM27C2048-255
VCC = 5.0 V ± 5%
4 Am27C2048
FUNCTIONAL DESCRIPTION
Device Erasure that particular device. A high-level CE# input inhibits
the other devices from being programmed.
In order to clear all locations of their programmed con-
tents, the device must be exposed to an ultraviolet light Program Verify
source. A dosage of 15 W seconds/cm2 is required to
A verification should be performed on the programmed
completely erase the device. This dosage can be ob-
bits to determine that they were correctly programmed.
tained by exposure to an ultraviolet lamp—wavelength
The verify should be performed with OE# and CE#, at
of 2537 Å—with intensity of 12,000 µW/cm2 for 15 to 20
VIL, PGM# at VIH, and VPP between 12.5 V and 13.0 V.
minutes. The device should be directly under and about
one inch from the source, and all filters should be re- Autoselect Mode
moved from the UV light source prior to erasure.
The autoselect mode provides manufacturer and de-
Note that all UV erasable devices will erase with light vice identification through identifier codes on DQ0–
sources having wavelengths shorter than 4000 Å, such DQ7. This mode is primarily intended for programming
as fluorescent light and sunlight. Although the erasure equipment to automatically match a device to be pro-
process happens over a much longer time period, ex- grammed with its corresponding programming algo-
posure to any light source should be prevented for rithm. This mode is functional in the 25°C ± 5°C
maximum system reliability. Simply cover the package ambient temperature range that is required when pro-
window with an opaque label or substance. gramming the device.
Device Programming To activate this mode, the programming equipment
must force VH on address line A9. Two identifier bytes
Upon delivery, or after each erasure, the device has
may then be sequenced from the device outputs by tog-
all of its bits in the “ONE”, or HIGH state. “ZEROs” are
gling address line A0 from VIL to VIH (that is, changing
loaded into the device through the programming pro-
the address from 00h to 01h). All other address lines
cedure.
must be held at VIL during the autoselect mode.
The device enters the programming mode when 12.75
Byte 0 (A0 = VIL) represents the manufacturer code,
V ± 0.25 V is applied to the VPP pin, and CE# and
and Byte 1 (A0 = VIH), the device identifier code. Both
PGM# are at VIL.
codes have odd parity, with DQ7 as the parity bit.
For programming, the data to be programmed is ap-
plied 16 bits in parallel to the data pins. Read Mode
To obtain data at the device outputs, Chip Enable (CE#)
The flowchart in the Programming section (Section 5,
and Output Enable (OE#) must be driven low. CE# con-
Figure 5-1) shows AMD’s Flashrite algorithm. The
trols the power to the device and is typically used to se-
Flashrite algorithm reduces programming time by using
lect the device. OE# enables the device to output data,
a 100 µs programming pulse and by giving each address
independent of device selection. Addresses must be
only as many pulses to reliably program the data. After
stable for at least tACC –tOE. Refer to the Switching
each pulse is applied to a given address, the data in that
Waveforms section for the timing diagram.
address is verified. If the data does not verify, additional
pulses are given until it verifies or the maximum pulses Standby Mode
allowed is reached. This process is repeated while se-
The device enters the CMOS standby mode when CE#
quencing through each address of the device. This part
is at VCC ± 0.3 V. Maximum VCC current is reduced to
of the algorithm is done at VCC = 6.25 V to assure that
100 µA. The device enters the TTL-standby mode
each EPROM bit is programmed to a sufficiently high
when CE# is at VIH. Maximum VCC current is reduced
threshold voltage. After the final address is completed,
to 1.0 mA. When in either standby mode, the device
the entire EPROM memory is verified at VCC = VPP =
places its outputs in a high-impedance state, indepen-
5.25 V.
dent of the OE# input.
Please refer to Section 5 for additional programming in-
formation and specifications. Output OR-Tieing
To accommodate multiple memory connections, a
Program Inhibit two-line control function provides:
Programming different data to multiple devices in par-
■ low memory power dissipation, and
allel is easily accomplished. Except for CE#, all like in-
puts of the devices may be common. A TTL low-level ■ assurance that output bus contention will not occur.
program pulse applied to one device’s CE# input with CE# should be decoded and used as the primary de-
VPP = 12.75 V ± 0.25 V and PGM# LOW will program vice-selecting function, while OE# be made a common
connection to all devices in the array and connected to
Am27C2048 5
the READ line from the system control bus. This as- put capacitance loading of the device. At a minimum, a
sures that all deselected memory devices are in their 0.1 µF ceramic capacitor (high frequency, low inherent
low-power standby mode and that the output pins are inductance) should be used on each device between
only active when data is desired from a particular mem- VCC and VSS to minimize transient effects. In addition,
ory device. to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
System Applications rays, a 4.7 µF bulk electrolytic capacitor should be used
During the switch between active and standby condi- between VCC and VSS for each eight devices. The loca-
tions, transient current peaks are produced on the ris- tion of the capacitor should be close to where the
ing and falling edges of Chip Enable. The magnitude of power supply is connected to the array.
these transient current peaks is dependent on the out-
Notes:
1. VH = 12.0 V ± 0.5 V.
2. X = Either VIH or VIL.
3. A1–A8 and A10–16 = VIL.
4. See DC Programming Characteristics for VPP voltage during programming.
6 Am27C2048
ABSOLUTE MAXIMUM RATINGS OPERATING RANGES
Storage Temperature Commercial (C) Devices
OTP Products. . . . . . . . . . . . . . . . . . –65°C to +125°C Ambient Temperature (TA) . . . . . . . . . . .0°C to +70°C
All Other Products . . . . . . . . . . . . . . –65°C to +150°C
Industrial (I) Devices
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C Ambient Temperature (TA) . . . . . . . . .–40°C to +85°C
Am27C2048 7
DC CHARACTERISTICS OVER OPERATING RANGE
(unless otherwise specified)
Parameter
Symbol Parameter Description Test Conditions Min Max Unit
E Devices 5.0
ICC1 VCC Active Current (Note 2) CE# = VIL, f = 5 MHz, C/I Devices 50
mA
IOUT = 0 mA E Devices 60
IPP1 VPP Supply Current (Read) CE# = OE# = VIL, VPP = VCC 100 µA
Caution: The device must not be removed from (or inserted into) a socket when VCC or VPP is applied.
Notes:
1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP..
2. ICC1 is tested with OE# = VIH to simulate open outputs.
3. Minimum DC Input Voltage is –0.5 V. During transitions, the inputs may overshoot to –2.0 V for periods less than 20 ns.
Maximum DC Voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods less than 20 ns.
35 35
30 30
Supply Current
Supply Current
in mA
in mA
25 25
20 20
15 15
1 2 3 4 5 6 7 8 9 10 –75 –50 –55 0 25 50 75 100 125 150
Frequency in MHz Temperature in °C
11407G-5 11407G-6
Figure 1. Typical Supply Current vs. Frequency Figure 2. Typical Supply Current vs. Temperature
VCC = 5.5 V, T = 25°C VCC = 5.5 V, f = 5 MHz
8 Am27C2048
TEST CONDITIONS
3V 2.4 V
2.0 V 2.0 V
0.8 V 0.8 V
0V 0.45 V
Input Output Input Output
11407G-8
Steady
Changing from H to L
Changing from L to H
KS000010-PAL
Am27C2048 9
AC CHARACTERISTICS
Parameter Symbols Am27C2048
JEDEC Standard Description Test Setup -55 -70 -90 -120 -150 -200 -255 Unit
CE#,
tAVQV tACC Address to Output Delay Max 55 70 90 120 150 200 250 ns
OE# = VIL
tELQV tCE Chip Enable to Output Delay OE# = VIL Max 55 70 90 120 150 200 250 ns
Caution: Do not remove the device from (or insert it into) a socket or board that has VPP or VCC applied.
Notes:
1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP.
2. This parameter is sampled and not 100% tested.
3. Switching characteristics are over operating range, unless otherwise specified.
4. See Figure 3 and Table 1 for test specifications.
SWITCHING WAVEFORMS
2.4
Addresses 2.0 2.0
Addresses Valid
0.8 0.8
0.45
CE#
tCE
OE#
tDF (Note 2)
tOE
tACC tOH
(Note 1)
High Z High Z
Output Valid Output
11407G-9
Notes:
1. OE# may be delayed up to tACC – tOE after the falling edge of the addresses without impact on tACC.
2. tDF is specified from OE# or CE#, whichever occurs first.
PACKAGE CAPACITANCE
CDV040 PD 040 PL 044
Parameter Parameter
Symbol Description Test Conditions Typ Max Typ Max Typ Max Unit
Notes:
1. This parameter is only sampled and not 100% tested.
2. TA = +25°C, f = 1 MHz.
10 Am27C2048
PHYSICAL DIMENSIONS*
CDV040—40-Pin Ceramic Dual In-Line Package, UV Lens (measured in inches)
DATUM D
CENTER PLANE UV Lens
.565
.605
1
INDEX AND
TERMINAL NO. 1
I.D. AREA
TOP VIEW
DATUM D
CENTER PLANE .700
MAX
2.035
2.080
.160
BASE PLANE .220
SEATING PLANE 94°
.015 .125 105°
.060 .200
16-000038H-3
CDV040
DF11
3-30-95 ae
* For reference only. BSC is an ANSI standard for Basic Space Centering.
40 21
.530 .008
.580 .015
Pin 1 I.D.
.630
20 .700
.045 0°
.065 .005 MIN 10°
.140
.225
Am27C2048 11
PHYSICAL DIMENSIONS
PL 044—44-Pin Plastic Leaded Chip Carrier (measured in inches)
.062
.685 .042 .083
.695 .650 .056
.656
Pin 1 I.D.
.685 .500 .590
.695
REF .630
.650
.656
.013
.021
.009
.026 .015
.032 .050 REF .090
.120
.165
.180 SEATING PLANE 16-038-SQ
PL 044
EC80
TOP VIEW SIDE VIEW 11.3.97 lv
Trademarks
12 Am27C2048