June 2004

AOD444, AOD444L (Green Product)

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD444 uses advanced trench technology and VDS (V) = 60V
design to provide excellent RDS(ON) with low gate ID = 12 A
charge. This device is suitable for use in PWM, load RDS(ON) < 60 mΩ (VGS = 10V)
switching and general purpose applications. RDS(ON) < 85 mΩ (VGS = 4.5V)
AOD444L (Green Product) is offered in a lead-free
package.

TO-252
D-PAK
D

Top View
Drain Connected to
Tab
G
S

G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 12
Current G TC=100°C ID 12 A
C
Pulsed Drain Current IDM 30
C
Avalanche Current IAR 12 A
C
Repetitive avalanche energy L=0.1mH EAR 23 mJ
TC=25°C 20
PD W
Power Dissipation B TC=100°C 10
TA=25°C 2
PDSM W
Power Dissipation A TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 17.4 30 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 50 60 °C/W
Maximum Junction-to-Case B Steady-State RθJC 4 7.5 °C/W

Alpha & Omega Semiconductor, Ltd.

AOD444, AOD444L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 60 V
VDS=48V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 2.4 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 30 A
VGS=10V, ID=12A 47 60
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 85
VGS=4.5V, ID=6A 67 85 mΩ
gFS Forward Transconductance VDS=5V, ID=12A 14 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 450 540 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 61 pF
Crss Reverse Transfer Capacitance 27 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.35 2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 7.5 10 nC
Qg(4.5V) Total Gate Charge 3.8 5 nC
VGS=10V, VDS=30V, ID=12A
Qgs Gate Source Charge 1.2 nC
Qgd Gate Drain Charge 1.9 nC
tD(on) Turn-On DelayTime 4.2 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=2.5Ω, 3.4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 16 ns
tf Turn-Off Fall Time 2 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 27.6 35 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 30 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD444, AOD444L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V
25 VDS=5V
7V 6V
15
20
5V
125°C
ID (A)

ID(A)
15 10
4.5V
10 VGS=4V 25°C
5
3.5V
5

0
0
2 2.5 3 3.5 4 4.5 5
0 1 2 3 4 5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics

80 2.2

2
Normalized On-Resistance

70
VGS=4.5V VGS=10V, 12A
1.8
RDS(ON) (mΩ)

60 1.6

VGS=10V VGS=4.5V,6A
1.4
50
1.2

1
40
0 4 8 12 16 20 0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and
Temperature (°C)
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature

160 1.0E+01

140 1.0E+00
ID=12A
125°C
120
1.0E-01
RDS(ON) (mΩ)

125°C
IS (A)

100
1.0E-02
80 25°C
25°C 1.0E-03
60
1.0E-04
40
4 6 8 10 1.0E-05
VGS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AOD444, AOD444L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

700
10
VDS=30V 600
8 ID=12A Ciss
A 500

Capacitance (pF)
VGS (Volts)

6 400

4 300
Coss
200
2
100 Crss
0
0
0 2 4 6 8
0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 200
TJ(Max)=175°C, TA=25°C
10µs
RDS(ON) 160 TJ(Max)=175°C
100µs TA=25°C
limited
10.0
Power (W)

1ms 120
ID (Amps)

10ms 80
1.0 DC
40

0
0.1 0.0001 0.001 0.01 0.1 1 10
0.1 1 10 100
Pulse Width (s)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=7.5°C/W
Thermal Resistance

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD444, AOD444L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

14 25

L ⋅ ID
ID(A), Peak Avalanche Current

12
tA = 20

Power Dissipation (W)

10
BV − VDD
15
8

6 10

4
TA=25°C 5
2

0 0
0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

14 50

12 TA=25°C
40
Current rating ID(A)

10
Power (W)

30
8

6 20

4
10
2

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=60°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.