Data Sheet

N0439N
N-channel MOSFET R07DS1065EJ0100
Rev.1.00
40 V, 90 A, 3.3 mΩ Jun 13, 2013

Description
This product is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features
• Super low on-state resistance
RDS(on) = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )
• Low Ciss : Ciss = 3900 pF TYP. ( VDS = 25 V )

TO-220
Ordering Information
Part No. LEAD PLATING PACKING Package
Tube
N0439N-S19-AY*1 Pure Sn (Tin) TO-220 1.9g TYP.
50 p/tube
Note: *1. Pb-free ( This product does not contain Pb in the external electrode. )

Absolute Maximum Ratings (TA = 25°C)

Item Symbol Ratings Unit
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ± 20 V
Drain Current (DC) (TC = 25 °C) ID(DC) ± 90 A
Drain Current (pulse) *1 ID(pulse) ± 360 A
Total Power Dissipation (TC = 25 °C) PT1 147 W
Total Power Dissipation (TA = 25 °C) PT2 1.8 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg -55 to 175 °C
Repetitive Avalanche Current *2 IAR 37 A
*2
Repetitive Avalanche Energy EAR 136 mJ
Notes: ∗1. TC=25℃、Pw ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. RG = 25Ω, VGS = 20 Æ 0V

Thermal Resistance
Channel to Case Thermal Resistance Rth(ch-C) 1.02 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W

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Electrical Characteristics (TA = 25°C)

Item Symbol Min. Typ. Max. Unit Test Conditions
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 40V, VGS = 0 V
Gate Leakage Current IGSS ±100 nA VGS = ± 20 V, VDS = 0 V
Gate to Source Threshold Voltage VGS(th) 2.0 3.0 4.0 V VDS = VGS, ID = 250 μA
*1
Forward Transfer Admittance | yfs | 30 S VDS = 5 V, ID = 45 A
*1
Drain to Source On-state Resistance RDS(on) 2.75 3.30 mΩ VGS = 10 V, ID = 45 A
Input Capacitance Ciss 3900 5850 pF VDS = 25 V
Output Capacitance Coss 530 800 pF VGS = 0 V
Reverse Transfer Capacitance Crss 200 360 pF f = 1 MHz
Turn-on Delay Time td(on) 25 60 ns VDD = 20V, ID = 45 A
Rise Time tr 12 30 ns VGS = 10 V
Turn-off Delay Time td(off) 65 130 ns RG = 0 Ω
Fall Time tf 8 20 ns
Total Gate Charge QG 68 102 nC VDD = 32V
Gate to Source Charge QGS 18 nC VGS = 10 V
Gate to Drain Charge QGD 18 nC ID = 90 A
*1
Body Diode Forward Voltage VF(S-D) 0.95 1.5 V IF = 90 A, VGS = 0 V
Reverse Recovery Time trr 47 ns IF = 90 A, VGS = 0 V
Reverse Recovery Charge Qrr 68 nC di/dt = 100 A/μs
Note: *1. Pulsed test

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T. D.U.T.
VGS
RG = 25 Ω L RL
VGS 90%
10% VGS
Wave Form
RG 0
PG. 50 Ω VDD PG. VDD
VGS = 20 → 0 V VDS
90% 90%
VGS VDS
BVDSS 10% 10%
0 VDS 0
IAS Wave Form
ID VDS τ td(on) tr td(off) tf
VDD
τ = 1 μs ton toff
Duty Cycle ≤ 1%
Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

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N0439N

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
OPERATING AREA
120 160
dT - Percentage of Rated Power - %

140
100

Pt – Total Power Dissipation - W

120
80
100

60 80

60
40
40
20 20

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175

TC - Case Temperature - °C TC - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT(DC) vs. CASE TEMPERATURE

1000 100
ID(Pulse)=360A
RDS(ON)Limted
(VGS=10V) PW
=1
0 0u 80
100 s
ID(DC) - Drain Current(DC) – A
ID - Drain Current - A

ID(DC)=90A
PW

60
=1

Power Dissipation Limited

ms

10
PW
=1

40
0ms

Secondary Breakdown Limited

DC

1
20
TC =25℃
Single Pulse
0
0.1
0 25 50 75 100 125 150 175
0.1 1 10 100

TC - Case Temperature - °C
VDS - Drain to Source Voltage – V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
Rth(t) - Transient Thermal Resistance - °C/W

R th(ch-A)=83.3℃/W
100

10

R th(ch-C)=1.02℃/W
1

0.1

Single pulse
0.01
100 μ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s

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 N0439N
DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
400 100

350
10 TA=-55℃
300 25℃
85℃
250
ID - Drain Current - A

ID - Drain Current - A
1 150℃
200 175℃

150 0.1

100
0.01
VGS=10V
50 VDS = 10V
Pulsed
Pulsed
0 0.001
0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 5 6

VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

GATE TO SOURCE THRESHOLD VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs.

CHANNEL TEMPERATURE DRAIN CURRENT
4 100
VGS(th) – Gate to Source Threshold Voltage - V

TA=-55℃
| yfs | - Forward Transfer Admittance - S

25℃
3 85℃
150℃
175℃

2 10

1
VDS = VGS VDS=5V
I D=250μA Pulsed

0 1
-100 -50 0 50 100 150 200 0.1 1 10 100

Tch - Channel Temperature - °C ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT GATE TO SOURCE VOLTAGE
6 6
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ

5 5

4 4

3 3

2 2

1 VGS=10V 1 I D=45A
Pulsed
Pulsed
0 0
1 10 100 1000 0 5 10 15 20

ID - Drain Current - A VGS - Gate to Source Voltage - V

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 N0439N
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
CHANNEL TEMPERATURE
6 10000
RDS(on) - Drain to Source On-state Resistance - mΩ

Ciss
5

Ciss, Coss, Crss - Capacitance - pF

4

S
3 1000
Coss

f
VGS=10V
VGS=0V
1 I D=45A
f =1MHz Crss
Pulsed
100
0
0.1 1 10 100
-100 0 100 200

VDS - Drain to Source Voltage - V

Tch - Channel Temperature - °C

SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000 35 14
td(on),tr,td(off),tr – Switching Time - ns

30 12
VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

VDD=32V
20V
25 8V 10
100 t d(off)
20 8
t d(on)
15 6
tr
10 10 VGS 4
tf
VDD=20V 5 VDS 2
VGS=10V I D=90A
R G =0Ω 0 0
1 0 10 20 30 40 50 60 70
0.1 1 10 100
QG - Gate Charge - nC
ID - Drain Current - A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.

DRAIN CURRENT
1000 100
VGS=10V
trr – Reverse Recovery Time - ns
IF - Diode Forward Current - A

100 VGS=0V

10 10

1
di/dt=100A/uｓ
Pulsed V GS=0V
0.1 1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 1 10 100

VF(S-D) - Source to Drain Voltage - V IF - Drain Current - A

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N0439N

Package Drawings (Unit: mm)

TO-220

4.8 MAX.
10.2 MAX.

2.8±0.3
3.6±0.2 1.3±0.2
8.7 TYP.

15.9 MAX.
6.3 MIN.
4

12.7 MIN.
3.0 TYP.
1.52±0.2

0.8±0.1 0.5±0.2 2.4±0.2

2.54 TYP. 2.54 TYP.

1. Gate
2. Drain
1 2 3 3. Source
4. Fin (Drain)
RENESAS Package code : PRSS0004AP-A

Equivalent Circuit / Pin Assignment

2 , 4 : Drain
4

Body
1 : Gate Diode

3 : Source
1 2 3

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.

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Jun 13, 2013
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