BUP 203
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1 Pin 2 Pin 3
G C E
Type VCE IC Package Ordering Code
BUP 203 1000V 23A TO-220 AB Q67078-A4402-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1000 V
Collector-gate voltage VCGR
RGE = 20 kΩ 1200
Gate-emitter voltage VGE ± 20
DC collector current IC A
TC = 25 °C 23
TC = 90 °C 15
Pulsed collector current, tp = 1 ms ICpuls
TC = 25 °C 46
TC = 90 °C 30
Avalanche energy, single pulse EAS mJ
IC = 10 A, VCC = 24 V, RGE = 25 Ω
L = 3 mH, Tj = 25 °C 20
Power dissipation Ptot W
TC = 25 °C 165
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Semiconductor Group 1 Dec-06-1995
This datasheet has been downloaded from http://www.digchip.com at this page
BUP 203
Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
IGBT thermal resistance, chip case RthJC ≤ 0.63 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 0.7 mA 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(sat)
VGE = 15 V, IC = 10 A, Tj = 25 °C - 2.8 3.3
VGE = 15 V, IC = 10 A, Tj = 125 °C - 3.8 4.3
VGE = 15 V, IC = 10 A, Tj = 150 °C - 4 4.5
Zero gate voltage collector current ICES µA
VCE = 1000 V, VGE = 0 V, Tj = 25 °C - - 150
VCE = 1000 V, VGE = 0 V, Tj = 125 °C - - 700
Gate-emitter leakage current IGES nA
VGE = 20 V, VCE = 0 V - 0.1 100
AC Characteristics
Transconductance gfs S
VCE = 20 V, IC = 10 A 3.5 5.5 -
Input capacitance Ciss pF
VCE = 25 V, VGE = 0 V, f = 1 MHz - 1300 1750
Output capacitance Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 100 150
Reverse transfer capacitance Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 50 75
Semiconductor Group 2 Dec-06-1995
BUP 203
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time td(on) ns
VCC = 600 V, VGE = 15 V, IC = 10 A
RGon = 47 Ω - 40 60
Rise time tr
VCC = 600 V, VGE = 15 V, IC = 10 A
RGon = 47 Ω - 30 50
Turn-off delay time td(off)
VCC = 600 V, VGE = -15 V, IC = 10 A
RGoff = 47 Ω - 200 300
Fall time tf
VCC = 600 V, VGE = -15 V, IC = 10 A
RGoff = 47 Ω - 20 30
Total turn-off loss energy Eoff mWs
VCC = 600 V, VGE = -15 V, IC = 10 A
RGoff = 47 Ω - 1.3 -
Semiconductor Group 3 Dec-06-1995
BUP 203
Power dissipation Collector current
Ptot = ƒ(TC) IC = ƒ(TC)
parameter: Tj ≤ 150 °C parameter: VGE ≥ 15 V , Tj ≤ 150 °C
170 24
W A
140 20
Ptot IC
18
120
16
100 14
12
80
10
60
8
40 6
4
20
2
0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC
Safe operating area Transient thermal impedance IGBT
IC = ƒ(VCE) Zth JC = ƒ(tp)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C parameter: D = tp / T
10 2 10 0
t = 16.0µs
p
A K/W
IC ZthJC
10 1 10 -1
100 µs
D = 0.50
1 ms 0.20
10 0 10 -2 0.10
0.05
10 ms 0.02
single pulse
0.01
DC
10 -1 10 -3
0 1 2 3 -5 -4 -3 -2 -1 0
10 10 10 V 10 10 10 10 10 10 s 10
VCE tp
Semiconductor Group 4 Dec-06-1995
BUP 203
Typ. output characteristics Typ. transfer characteristics
IC = f(VCE) IC = f (VGE)
parameter: tp = 80 µs, Tj = 125 °C parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C
Typ. saturation characteristics Typ. saturation characteristics
VCE(sat) = f (VGE) VCE(sat) = f (VGE)
parameter: Tj = 25 °C parameter: Tj = 125 °C
Semiconductor Group 5 Dec-06-1995
BUP 203
Typ. gate charge Typ. capacitances
VGE = ƒ(QGate) C = f (VCE)
parameter: IC puls = 10 A parameter: VGE = 0 V, f = 1 MHz
20
VGE 16
400 V 800 V
14
12
10
0
0 20 40 60 80 100 nC 130
Q Gate
Typ. switching time
t = f (RG), inductive load, Tj = 125 °C
parameter: VCE = 600 V, VGE = ± 15 V, IC = 10 A
Semiconductor Group 6 Dec-06-1995
BUP 203
Package Outlines
Dimensions in mm
Weight: 8 g
Semiconductor Group 7 Dec-06-1995
