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SEMICONDUCTOR TECHNICAL DATA

MAC212
Series
Triacs MAC212A
Silicon Bidirectional Thyristors Series
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a TRIACs
blocking to a conducting state for either polarity of applied anode voltage with positive 12 AMPERES RMS
or negative gate triggering. 200 thru 800 VOLTS
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat MT1
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes MT2 G
(MAC212A Series)

CASE 221A-04
(TO-220AB)
STYLE 4

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating Symbol Value Unit
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, VDRM Volts
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4, MAC212A4 200
MAC212-6, MAC212A6 400
MAC212-8, MAC212A8 600
MAC212-10, MAC212A10 800
On-State Current RMS (TC = +85°C) IT(RMS) 12 Amp
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) ITSM 100 Amp
preceded and followed by Rated Current
Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s
Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) PGM 20 Watts
Average Gate Power (TC = +85°C, t = 8.3 ms) PG(AV) 0.35 Watt
Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) IGM 2 Amp
Operating Junction Temperature Range TJ –40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
  
  

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.1 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current (Either Direction) IDRM
(VD = Rated VDRM, Gate Open) TJ = 25°C — — 10 µA
TJ = +125°C — — 2 mA
Peak On-State Voltage (Either Direction) VTM — 1.3 1.75 Volts
ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
Gate Trigger Current (Continuous dc) IGT mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 12 50
MT2(+), G(–) — 12 50
MT2(–), G(–) — 20 50
MT2(–), G(+) “A” SUFFIX ONLY — 35 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2
MT2(+), G(–) — 0.9 2
MT2(–), G(–) — 1.1 2
MT2(–), G(+) “A” SUFFIX ONLY — 1.4 2.5
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) 0.2 — —
MT2(–), G(+) “A” SUFFIX ONLY 0.2 — —
Holding Current (Either Direction) IH — 6 50 mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
Turn-On Time tgt — 1.5 — µs
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off-State Voltage dv/dt — 100 — V/µs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85°C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C)

FIGURE 1 — CURRENT DERATING FIGURE 2 — POWER DISSIPATION

PD(AV), AVERAGE POWER DISSIPATION (WATT)

125 28

24
115 α
20 α dc
105 α = 30° α = 180°
16 α = CONDUCTION ANGLE
90°
60° 12 60°
95 α 90° 30°
α 180° 8.0
85 dc
α = CONDUCTION ANGLE 4.0

75 0
0 2.0 4.0 6.0 8.0 10 12 14 0 2.0 4.0 6.0 8.0 10 12 14
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)
  
  

FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT
100 100

ITSM , PEAK SURGE CURRENT (AMP)

50
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)

80

20
60
10
40 CYCLE
5.0

TJ = 25°C TC = 70°C
20
2.0 f = 60 Hz
TJ = 125°C
Surge is preceded and followed by rated current
1.0 0
1.0 2.0 3.0 5.0 7.0 10
0.5 NUMBER OF CYCLES

0.2

0.1 FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 2.0
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

1.6 OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

1.2

0.8

0.4

0
–60 –40 –20 0 20 40 60 80
TC, CASE TEMPERATURE (°C)

FIGURE 6 — TYPICAL GATE TRIGGER CURRENT FIGURE 7 — TYPICAL HOLDING CURRENT

I GT, GATE TRIGGER CURRENT (NORMALIZED)

2.0 2.8
IH , HOLDING CURRENT (NORMALIZED)

2.4
OFF-STATE VOLTAGE = 12 Vdc
1.6 OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0 ALL MODES

1.2 1.6

1.2
0.8
0.8
0.4
0.4

0 0
–60 –40 –20 0 20 40 60 80 –60 –40 –20 0 20 40 60 80
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
  
  

FIGURE 8 – THERMAL RESPONSE
1.0
r(t), TRANSIENT THERMAL RESISTANCE

0.5

0.2
(NORMALIZED)

ZθJC(t) = r(t) • RθJC

0.1

0.05

0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)