Data Sheet

PD166031AT1U R07DS1308EJ0100
Rev.1.00
Oct. 30, 2015
INTELLIGENT POWER DEVICE
1. Overview

1.1 Description

Family:
PD166031AT1U is part of 2nd Generation Intelligent Power Devices (IPD). They are N-channel high-side switches
with charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded
protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number
combination.

Scalability:
Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design
depending on target load.

Robustness:
Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against
long term and repetitive short circuit condition.

1.2 Features
 Built-in charge pump
 3.3V compatible logic interface
 Low standby current
 Short circuit protection
 Shutdown by over current detection
 Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control)
 Absolute Tch over temperature protection
 Built-in diagnostic function
 Proportional load current sensing
 Defined fault signal in case of abnormal load condition
 Loss of ground protection
 Under voltage lock out
 Active clamp operation at inductive load switch off
 Cross current protection in case of H-bridge high side usage
 AEC Qualified
 RoHS compliant

1.3 Application
 Light bulb switching from 55W to 65W according to on-state resistance
 Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor
 Power supply switch, fail-safe switch of 14V DC grounded system

Note: The information contained in this document is the one that was obtained when the document was issued,
and may be subject to change.

R07DS1308EJ0100 Rev.1.00 Page 1 of 39

Oct. 30, 2015
PD166031AT1U 2. Ordering Information

2. Ordering Information
Part No. Nick name Lead plating Packing Package
UPD166031AT1U-E1-AY NHS010A(A) Pure Matte Sn Tape 2500 p/reel TO252-7
Note: Part No. and Nick name are tentative and might change at anytime without notice.

2.1 Nick name

N H S 010 A
A: TO252-7
On-state resistance
B: 12-pin Power HSSOP
S: Single channel C: 24-pin Power HSSOP
D: Dual channel
Q: Quad channel

Nch High-side

R07DS1308EJ0100 Rev.1.00 Page 2 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3. Specification

3.1 Block Diagram

3.1.1 Nch High-side Single Device

Voltage and Current Definition

R07DS1308EJ0100 Rev.1.00 Page 3 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.2 Pin Configuration

Tab

3.2.1 TO252-7 Pin Configuration

Pin No. Terminal Name
1 OUT
2 GND
3 IN
4, Tab VCC
5 IS
6 SEN
7 OUT

1 2 3 4 5 6 7
Pin function
Terminal Name Pin function Recommended connection
GND Ground connection Connected to GND through a 100  resistor or a
diode for reverse current protection
Refer chapter 6.
IN Input signal Connected to MCU port through 2k-50K serial
resistor.
IS Current sense and Diagnosis output signal Connected to GND through a 0.67K-5K resistor.
Not connect if this pin is not used.
SEN Sense enable input Connected to MCU port through 2k-50K serial
resistor. Not connect if this pin is not used.
OUT Protected high-side power output Connected to load with small 50-100nF capacitor
in parallel.
VCC Positive power supply for logic supply as well as Connected to battery voltage with small 100nF
output power supply capacitor in parallel.

R07DS1308EJ0100 Rev.1.00 Page 4 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.3 Absolute Maximum Ratings

Ta=25°C, unless other specified
Parameter Symbol Rating Unit Test Condition
Vcc Voltage VCC 28 V
Vcc Voltage at reverse -VCC -16 V RL=2, t<2min,
battery condition RIN=2k, RSEN=2k, RIS=1k, RGND=100
GND Reverse current at IGND(Rev) 200 mA RL=2, t<2min
reverse battery condition
Vcc voltage under Load Vload dump 42 V RI=1, RL=2, RIS=1k, RIN=2k, RSEN=2k,
Dump condition RGND=100, td=400ms
Load Current IL Self limited A
Total power dissipation PD 1.85 W Ta=85°C,
for whole device (DC) Device on 50mm50mm1.5mm epoxy PCB FR4
with 6 cm2 of 70 m copper area
Voltage at IN pin VIN -2 ~ 16 V DC
RIN=2k
-16 At reverse battery condition, t<2min,
RIN=2k, RSEN=2k
IN pin current IIN 10 mA DC
Voltage at IS pin VIS VCC V DC
RIS=1k
-16 V At reverse battery condition, t<2min,
RL=2, RIS=1k
IS Reverse current at IIS(Rev) -30 mA At reverse battery condition, t<2min,
reverse battery condition RL=2
Voltage at SEN pin VSEN -2 ~ 16 V DC
RSEN=2k
-16 At reverse battery condition, t<2min
RIN=2k, RSEN=2k
SEN pin current ISEN 10 mA DC
Channel Temperature Tch -40 to +150 °C
Storage Temperature Tstg -55 to +150 °C
ESD susceptibility VESD 2000 V HBM AEC-Q100-002 std. All pin
R=1.5k, C=100pF
4000 IEC61000-4-2 std.
R=330, C=150pF, VCC, OUT
100nF at VCC and OUT
200 V MM AEC-Q100-003 std.
R=0, C=200pF
Inductive load switch-off EAS 170 mJ VCC=13.5V, Tch,start<150°C, RL=2
energy dissipation single
pulse
Inductive load switch-off EAR 95 mJ VCC=13.5V, Tch,start=85°C, RL=2
energy dissipation
repetitive pulse
Remark) All voltages refer to ground pin of the device

R07DS1308EJ0100 Rev.1.00 Page 5 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.4 Thermal Characteristics

Parameter Symbol Min Typ Max Unit Test Condition

Thermal characteristics Rth(ch-a) 35 °C/W According to JEDEC JESD51-2, -5, -7 on
FR4 2s2p board

Rth(ch-c) 1.0 °C/W

R07DS1308EJ0100 Rev.1.00 Page 6 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.5 Electrical Characteristics

Operation function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Parameter Symbol Min Typ Max Unit Test Condition
Operating Voltage VCC 4.5 28 V VIN=4.5V,
RL=2
Operating current IGND 2.2 4 mA VIN=4.5V
Output Leakage current IL(off) 0.5 A Tch=25°C VCC=13.5V,
VIN=0V,
VSEN=0V,
3 Tch=-40~125°C VIS=0V,
VOUT=0V,
VGND=0V
Standby current ICC(off) 0.5 A Tch=25°C VCC=13.5V,
VIN=0V,
VSEN=0V,
1.5 Tch=-40~85°C VIS=0V,
VOUT=0V,
VGND=0V
On-state resistance Ron 10 m Tch=25°C IL=6.8A
20 Tch=150°C
Low level IN pin voltage VIL 0.8 V
High level IN pin voltage VIH 2.5 V
Low level IN pin current IIL 2 25 A VIN=0.8V
High level IN pin current IIH 2 25 A VIN=2.5V
Clamping IN pin voltage 1) VZIN 5 6 V
Low level SEN pin voltage VSENL 0.8 V
High level SEN pin voltage VSENH 2.5 V
Low level SEN pin current ISENL 2 25 A VSEN=0.8V
High level SEN pin current ISENH 2 25 A VSEN=2.5V
Clamping SEN pin voltage1) VZSEN 5 6 V
Under voltage shutdown VCC(Uv) 4.5 V
Under voltage restart VCC(Cpr) 5.0 V
Turn on time ton 200 s VCC=13.5V, RL=2
Turn on delay time td(on) 100 s
Turn off time toff 200 s
Turn off delay time td(off) 150 s
Slew rate on dV/dton 1.5 V/s
Slew rate off -dV/dtoff 1.5 V/s
Switching drift1) ton-toff -50 +50 s Vcc = 9 to 18V drift from Vcc=13.5V,
Tch=-40 to 150°C drift from Tch=25°C
ton; Vout=Vcc-1.5V after input signal active
Turn on energy loss 1) Eon 1.2 2.4 mJ VCC=13.5V,Tch=25°C, RL=2
Turn off energy loss 1) Eoff 1.2 2.4 mJ
Driving capability 1) Dr(capa) 118 m Tch=25°C, VCC=8~16V
150 Tch=105°C, VCC=8~16V
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design

R07DS1308EJ0100 Rev.1.00 Page 7 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Protection function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Parameter Symbol Min Typ Max Unit Test Condition
Over current detection IL(SC) 72 121 A VCC=13.5V, Von=5V, Tch=25°C
current
Current limitation under IL(CL) 53 A VCC=13.5V
power limitation toggling
Current limitation under IL(TT) 21 A VCC=13.5V
absolute thermal toggling
Current limitation trigger Von(CL1) 2.0 V VCC=13.5V
threshold during turn-on
Current limitation trigger Von(CL2) 0.3 V VCC=13.5V
threshold during on-state
Current limitation trigger td(CL) 500 s VCC=13.5V
time after input signal
positive slope
Absolute thermal aTth 150 °C
shutdown temperature
Thermal hysteresis for aTth,hys 20 °C
absolute thermal toggling
Power limitation thermal dTth 50 °C
shutdown temperature
Power limitation restart dTth,rest 25 °C
temperature art
Output clamp at inductive Von,clam 30 40 V VCC=13.5V, IL=40mA, Tch=25°C
load switch off p
Output current while GND IL(GND) 1 mA IIN=0A, ISEN=0A, IGND=0A, IIS=0A
disconnection
Output voltage drop at Vds(rev) 0.9 V Tch=25°C VCC=-13.5V,
reverse battery condition RL=2
0.7 Tch=150°C

Remark) All voltages refer to ground pin of the device

R07DS1308EJ0100 Rev.1.00 Page 8 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter Symbol Min Typ Max Unit Test Condition
Current sense ratio KILIS 6000 7500 9000 IL=7A
5250 7500 9750 IL=1.4A
Current sense drift depend dKILIS -15 15 % VCC=13.5V, Tch,start=25°C, RL=2
on temperature
Sense current offset Iis,offset 2 A IL<10mA
current
Sense current leakage Iis,dis 1 A VIN=0V, VSEN=0V
current
Sense current under fault Iis,fault 3 9.5 mA VCC=13.5V, RIS=0.67k
condition 3.5 9 VCC=13.5V, RIS=1k
3.5 5.5 VCC=13.5V, RIS=2k
Minimum output current for IL(CSE) 10 100 mA IIS>5A
current sense output
Open load detection VOUT(OL) 2.0 5.0 V VIN=0V, Tch = -40~105°C
threshold at off-state
OUT terminal current at IOUT(OL) -1.0 A VIN =0V
Open load condition
Open load detection delay tdop 300 s VIN=4.5V to 0V, VOUT>VOUT(OL)
after input negative slope
Remark) All voltages refer to ground pin of the device

R07DS1308EJ0100 Rev.1.00 Page 9 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Parameter Symbol Min Typ Max Unit Test Condition
Sense current settling time tsis(on) 250 s VCC=13.5V, VIN=0V to 4.5V,
after input signal positive IL/IIS=KILIS, RL=2
slope
Sense current settling time tsis(off) 10 s VIN=4.5V to 0V
after input signal negative
slope 1)
Sense current settling time tssen(on) 20 s VSEN=0V to 4.5V, RL=2
after sense enable during
on-state 1)
Sense current settling time tssen(off) 20 s VSEN=4.5V to 0V, RL=2
after sense disable during
on-state 1)
Sense current settling time tsis(LC) 20 s RL=2 to 1
during on-state 1)
Fault signal delay after tdsc(fault) 10 s VIN=0V to 4.5V, IL=IL(SC)
over current detection 1)
Fault signal delay after tdpl(fault) 10 s Von>Von(CL1)
power limitation valid 1)
Fault signal delay after tdpl(off) 30 s Von<Von(CL1)
power limitation invalid 1)
Fault signal delay after tdot(fault) 10 s IISIIS,fault
absolute thermal shutdown
1)

Fault signal delay after tdop(fault) 10 s VIN=0V, VOUT>VOUT(OL)

open load detection at off-
state 1)
Fault signal delay after tdoff(fault) 10 s VIN=4.5V to 0V
input negative slope 1)
Remark) All voltages refer to ground pin of the device
1) not subjected production test, guaranteed by design

R07DS1308EJ0100 Rev.1.00 Page 10 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.6 Feature Description

3.6.1 Driving Circuit

The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open
or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal is
pulled down with constant current source.

VIN

IN RESD
0

VOUT IIN
Vcc Internal ground

OFF ON OFF ON

0 t GND

Switching a resistive load Switching lamps

VIN VIN

0 0

IL IL

0 0

VOUT VOUT
Vcc

0 0

IIS IIS

0 t 0 t

R07DS1308EJ0100 Rev.1.00 Page 11 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Switching an inductive load

VIN

IL

VOUT
Vcc

Von,clamp

IIS

0 t

The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,
the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the
source of SW1 (= gate of output MOS) falls below the GND voltage.
SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit.
When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.
SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is
not activated.

VCC
RESD
IN ZDAZ ZDAZ
SW1
logic
RESD
SEN

ZDESD
Internal ground OUT

GND IS

R07DS1308EJ0100 Rev.1.00 Page 12 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.6.2 Device behavior at over voltage condition

In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of
logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load
from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC.

VCC
RESD
IN

RIN RESD
SEN N-ch
logic
RSEN MOSFET
ZDAZ ZDAZ
ZDESD ZDESD OUT

uC Internal ground IPD

GND IS

RGND RIS RL

3.6.3 Device behavior at low voltage condition

If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase
over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown.
The IS output is cleared during off-state.

VIN

IL

VCC
VCC(CPr)
VOUT VCC(Uv)

0 t

3.6.4 Loss of Ground protection

In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off
if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state.
In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage.

R07DS1308EJ0100 Rev.1.00 Page 13 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.6.5 Short circuit protection

Turn-on in an over load condition including short circuit condition

The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched
until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device
restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected
and restarts automatically in absolute thermal toggling mode. The device starts current limitation when (d) is detected.
The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) IL > IL(SC)
(b) deltaTch > dTth
(c) Tch > aTth
(d) Von > Von(CL1) after td(CL)

Over load condition including short circuit condition during on-state

The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2).
The device shuts down automatically when condition (b) is detected. The device restarts automatically in power
limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in
absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) Von > Von(CL2)
(b) deltaTch > dTth
(c) Tch > aTth

Power limitation control

Current limitation control with IL(CL) when auto restart from deltaTch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta
Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current
limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling
operation with power limitation mode.

Absolute thermal toggling

Current limitation control with IL(TT) when auto restart from absolute Tch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from
absolute Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as
current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during
toggling operation with thermal toggling mode.

delta Tch
Junction temperature differences between thermal sensor of power area and thermal sensor of control area.

R07DS1308EJ0100 Rev.1.00 Page 14 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

State transition diagram

Turn-on Over current Thermal

IN -> High Input

A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Shutdown by latch No
Yes
Von < Von(CL1) Over current
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

Von < Von(CL2) Current limitation

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input

Over current Input

IN = Low
C No
Yes
Shutting down
Input C Return No
Yes

IL > IL(NL) Von=Von(NL) Turn-on

No
Yes

B Return
IN = Low
No
Yes
C

Turn-off

R07DS1308EJ0100 Rev.1.00 Page 15 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Turn-on in an over load condition including short circuit condition

(a) IL > IL(SC)

Turn-on Over current Thermal

IN -> High Input

A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Shutdown by latch No
Yes
Von < Von(CL1) Over current
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

Von < Von(CL2) Current limitation

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input

Over current Input

IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

IL > IL(NL) Von=Von(NL) Turn-on

No
Yes

B Return
IN = Low
No
Yes Before over current detection

C After over current detection

Turn-off Exit from off-latch

R07DS1308EJ0100 Rev.1.00 Page 16 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Turn-on in an over load condition including short circuit condition

(b) deltaTch > dTth

Turn-on Over current Thermal

IN -> High Input

A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Shutdown by latch No
Yes
Von < Von(CL1) Over current
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

Von < Von(CL2) Current limitation

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input

Over current Input

IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

IL > IL(NL) Von=Von(NL) Turn-on

No
Yes

B Return
IN = Low
No
Yes Before dTcht detection

C During shutdowning by dTth detection

Power limitation control
Turn-off During current limitation control

Exit from power limitation control

R07DS1308EJ0100 Rev.1.00 Page 17 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Turn-on in an over load condition including short circuit condition

(c) Tch > aTth

Turn-on Over current Thermal

IN -> High Input

A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Shutdown by latch No
Yes
Von < Von(CL1) Over current
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

Von < Von(CL2) Current limitation

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input

Over current Input

IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

IL > IL(NL) Von=Von(NL) Turn-on

No
Yes

B Return
IN = Low
No
Yes Before aTcht detection

C During shutdowning by aTth detection

Thermal toggling
Turn-off During current limitation control

Exit from power limitation control

R07DS1308EJ0100 Rev.1.00 Page 18 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

An over load condition which is include a short circuit condition during on-state
(a) Von > Von(CL) with weak short condition

Turn-on Over current Thermal

IN -> High Input

A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Shutdown by latch No
Yes
Von < Von(CL1) Over current
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

Von < Von(CL2) Current limitation

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input

Over current Input

IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

IL > IL(NL) Von=Von(NL) Turn-on

No
Yes

B Return
IN = Low
No
Yes Before Von(CL) detection after turn on

C After Von(CL) detection

Turn-off During shutdowning by dTth detection

Power limitation control
During current limitation control

Exit from power limitation control

R07DS1308EJ0100 Rev.1.00 Page 19 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

An over load condition including short circuit condition during on-state

(a) Von > Von(CL) with dead condition

Turn-on Over current Thermal

IN -> High Input

A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Shutdown by latch No
Yes
Von < Von(CL1) Over current
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

Von < Von(CL2) Current limitation

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input

Over current Input

IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

IL > IL(NL) Von=Von(NL) Turn-on

No
Yes

B Return
IN = Low
No
Yes Before Von(CL) detection after turn on

C After Von(CL) detection

Turn-off After over current detection

Exit from power limitation control

R07DS1308EJ0100 Rev.1.00 Page 20 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

An over load condition including short circuit condition during on-state

(b) deltaTch > dTth

Turn-on Over current Thermal

IN -> High Input

A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Shutdown by latch No
Yes
Von < Von(CL1) Over current
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

Von < Von(CL2) Current limitation

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input

Over current Input

IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

IL > IL(NL) Von=Von(NL) Turn-on

No
Yes

B Return
IN = Low
No
Yes Before dTth detection after turn on

C During shutdowning by dTth

detection
Turn-off Exit from thermal protection control

R07DS1308EJ0100 Rev.1.00 Page 21 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

An over load condition including short circuit condition during on-state

(c) Tch > aTth

Turn-on Over current Thermal

IN -> High Input

A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Shutdown by latch No
Yes
Von < Von(CL1) Over current
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

Von < Von(CL2) Current limitation

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input

Over current Input

IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

IL > IL(NL) Von=Von(NL) Turn-on

No
Yes

B Return
IN = Low
No
Yes Before aTth detection after turn on

C During shutdowning by aTth

detection
Turn-off Exit from thermal protection control

R07DS1308EJ0100 Rev.1.00 Page 22 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.6.6 Device behavior at small load current conduction

The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction.
Von (VCC-OUT) is proportionate to IL under normal conditions. Under IL<IL(NL) condition, Ron is controlled to
increase to be Von=Von(NL)=30mV(typ).

Von

Von(NL)

IL(NL) IL

R07DS1308EJ0100 Rev.1.00 Page 23 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.6.7 Diagnostic signal

Truth table
SEN Input Output Diagnostic output 2)
H H VCC IIS = IL/KILIS
Normal Operation
L L 1) < 1A (Iis,dis)
Shutdown by over H L 1) Iis,fault 3)
current detection L L 1) < 1A (Iis,dis)
IIS = IL/KILIS in case of Von<Von(CL1)
VOUT 6)
H Iis,fault 4) in case of Von>Von(CL1)
Power limitation
L 1) Iis,fault 4)
L L 1) < 1A (Iis,dis)
IIS = IL/KILIS in case of Von<Von(CL1)
VOUT 6)
H Iis,fault 5) in case of Von>Von(CL1)
Thermal toggling
L 1) Iis, fault 5)
L L 1) < 1A (Iis,dis)
H VCC < 2A (Iis,offset)
Short circuit to VCC
L VOUT 7) Iis,fault in case of VOUT>VOUT(OL)
H VCC < 2A (Iis,offset)
Open Load
L VOUT 7) Iis,fault in case of VOUT>VOUT(OL)
X 8) L X 8) X 8) < 1A (Iis,dis)

1) In case of OUT terminal is connected to GND via load.

2) In case of IS terminal is connected to GND via resister.
3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection.
4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1).
5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1)..
6) VOUT depends on the short circuit condition
7) VOUT depends on the ratio of VCC-OUT-GND resistive component.
8) Don’t care

R07DS1308EJ0100 Rev.1.00 Page 24 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Current sense output

The device output analog feedback current proportional to output current from IS pin. In the case of much higher
current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load
current, current sense output is above 5A if output current is above IL(CSE) max, current sense output is below 2A,
IIS,offset max, if output current is below IL(CSE) min.

IIS IIS

KILIS=IL/IIS
5uA

2uA
IIS,offset
IL IL

IL(CSE)

Sense current under fault condition

The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection,
during power limitation and during thermal toggling. IIS,fault is specified with RIS=1k condition. IIS,fault is
attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For
example, In the case of RIS=1k, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V
to 3.5V if VCC=13.5V. In the case of RIS is higher than 1k, Operation point as IIS,fault is lower than specified value
but VIS should be higher than RIS=1k condition.

IIS,fault

1k load line

VCC VCC-VIS
9mA VCC

IS

3.5mA GND
VIS RIS

VCC-VIS
VCC-VIS VIS

VCC

R07DS1308EJ0100 Rev.1.00 Page 25 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Sense current settling time

VIN

VSEN

VOUT tsis(on) tsis(LC) tsis(LC)

tssen(off) tssen(on) tsis(off)

IIS

Fault signal delay time at over current detection

VIN

VSEN

Over current detection

VOUT

Iis,fault
IIS

tdsc(fault)

R07DS1308EJ0100 Rev.1.00 Page 26 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Fault signal delay time at power limitation

VIN

VSEN
Short circuit appear Short circuit disappear
Power limitation

VOUT tdpl(fault) tdpl(off)

IIS Iis,fault

Fault signal delay time at Thermal toggling

VIN

VSEN
Short circuit appear Power Short circuit disappear
limitation Thermal toggling

VOUT tdpl(fault)
tdpl(off)

Iis,fault

IIS
tsis(off)

R07DS1308EJ0100 Rev.1.00 Page 27 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

Fault signal delay time at open load detection

VIN

VSEN
Open load condition appear

Open load detection Open load detection

VOUT

Iis,fault
tdop tdop(fault)
IIS

Iis,offset Iis,dis

R07DS1308EJ0100 Rev.1.00 Page 28 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.6.8 Nominal load

Product Nominal load
NHS010A 2.0

3.6.9 Driving Capability

Driving Capability is specified as load impedance. Over current detection characteristics is designed above Driving
Capability characteristics. If estimated load impedance which comes from peak inrush current is lower than Driving
Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown
the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load
impedance which comes from peak inrush current is lower than Driving Capability characteristics, Power limitation
disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving
Capability characteristics.

VIN
IL [A] IL(SC) specified point
NHS010A: 72A

t
115
IL(SC) characteristics
IL

5 13.5 Von [V] t

Driving Capability: 30ms
NHS010A:118m

R07DS1308EJ0100 Rev.1.00 Page 29 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.6.10 Cross current protection in case of H-bridge high side usage

In case of using High side driver in H-bridge circuit,
High side driver protects High side driver itself Vbat

and also low side driver from high power dissipation

by cross current when low side driver switching on.
VCC VCC
OFF ON
IN IN
OUT OUT

Cross Motor
current M current

PWM ON OFF

3.6.11 Measurement condition

Switching waveform of OUT terminal

VIN

ton toff

td(on) td(off)

90% 90%
70% 70%
VOUT
dV/dton -dV/dtoff
30% 30%
10%
10%

R07DS1308EJ0100 Rev.1.00 Page 30 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.7 Package drawing

R07DS1308EJ0100 Rev.1.00 Page 31 of 39

Oct. 30, 2015
PD166031AT1U 3. Specification

3.8 Taping information

3.9 Marking information

66031A

R07DS1308EJ0100 Rev.1.00 Page 32 of 39

Oct. 30, 2015
PD166031AT1U 4. Typical characteristics

4. Typical characteristics

R07DS1308EJ0100 Rev.1.00 Page 33 of 39

Oct. 30, 2015
PD166031AT1U 4. Typical characteristics

R07DS1308EJ0100 Rev.1.00 Page 34 of 39

Oct. 30, 2015
PD166031AT1U 4. Typical characteristics

R07DS1308EJ0100 Rev.1.00 Page 35 of 39

Oct. 30, 2015
PD166031AT1U 4. Typical characteristics

R07DS1308EJ0100 Rev.1.00 Page 36 of 39

Oct. 30, 2015
PD166031AT1U 4. Typical characteristics

R07DS1308EJ0100 Rev.1.00 Page 37 of 39

Oct. 30, 2015
PD166031AT1U 5. Thermal characteristics

5. Thermal characteristics

R07DS1308EJ0100 Rev.1.00 Page 38 of 39

Oct. 30, 2015
PD166031AT1U 6. Application example in principle

6. Application example in principle

RIN, RSEN, RAN values are in range of 2k to 50k depending microcontroller while R_L value is typically 4k.
If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s
value is typically 100k

GND Network recommendation

In case of V_loaddump < 35V In case of 35V < V_loaddump < 42V

Vbat Vbat

VCC VCC
GND GND

RGND

External diode is recommended in order to External diode and resistor are recommended
prevent reverse current toward control logic in order to prevent reverse current toward
part at reverse battery condition. control logic part at reverse battery condition
and limit the current through ZDAZ at load
dump condition. 100 is recommended as
RGND.
Note: If other component is installed to prevent reverse current at reverse battery condition,
diode is not required in GND Network.
Note: Approx. 1k additional resistor in parallel with the diode is recommended if Vf vaule of
the diode is high.

R07DS1308EJ0100 Rev.1.00 Page 39 of 39

Oct. 30, 2015
 Revision History PD166031AT1U Datasheet

Description
Rev. Date Page Summary
1.00 Oct. 30, 2015 1-39 1st issue

All trademarks and registered trademarks are the property of their respective owners.

C-1
 Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.

SALES OFFICES http://www.renesas.com

Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3
Tel: +1-905-237-2004
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141

© 2015 Renesas Electronics Corporation. All rights reserved.

Colophon 5.0
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Renesas Electronics:
UPD166031AT1U-E1-AY