H

High Resolution Optical

Reflective Sensor

Technical Data

HBCS-1100

Features matched I.C. photodetector. A

• Focused Emitter and bifurcated aspheric lens is used
Detector in a Single Package to image the active areas of the
• High Resolution–0.190 mm emitter and the detector to a
Spot Size single spot 4.27 mm (0.168 in.)
in front of the package. The
• 700 nm Visible Emitter
reflected signal can be sensed
• Lens Filtered to Reject directly from the photodiode or
Ambient Light through an internal transistor
• TO-5 Miniature Sealed that can be configured as a high
Package gain amplifier.
• Photodiode and Transistor Mechanical
Output Applications Considerations
• Solid State Reliability Applications include pattern The HBCS-1100 is packaged in a
recognition and verification, high profile 8 pin TO-5 metal can
Description object sizing, optical limit with a glass window. The emitter
The HBCS-1100 is a fully inte- switching, tachometry, textile and photodetector chips are
grated module designed for thread counting and defect mounted on the header at the
optical reflective sensing. The detection, dimensional monitor- base of the package. Positioned
module contains a 0.178 mm ing, line locating, mark, and bar above these active elements is a
(0.007 in.) diameter 700 nm code scanning, and paper edge bifurcated aspheric acrylic lens
visible LED emitter and a detection. that focuses them to the same
point.
Package Dimensions
9.40 (0.370) 12.0 R.P.
S.P.
8.51 (0.335) (0.473)
MAXIMUM
SIGNAL POINT
0.86 (0.034)
0.73 (0.029)
CL 8.33 (0.328)
7.79 (0.307)
4.11 1.14 (0.045)
REFERENCE (0.162)
0.73 (0.029)
PLANE
5.08 15.24 (0.600)
(0.200) 12.70 (0.500) 11.50 (0.453)
4.27 ± 0.25 5.08 11.22 (0.442)
(0.168 ± 0.010) (0.200)

NOTES:
1. ALL DIMENSIONS IN MILLIMETERS AND (INCHES).
2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY.
3. THE REFERENCE PLANE IS THE TOP SURFACE OF THE PACKAGE.
4. NICKEL CAN AND GOLD PLATED LEADS.
5. S.P. SEATING PLANE.
6. THE LEAD DIAMETER IS 0.45 mm (0.018 IN.) TYP.

5965-5944E 4-15
The sensor can be rigidly secured transistor to the positive potential switching of the LED should be
by commercially available two of the power supply and shorting designed to have the cathode
piece TO-5 style heat sinks, such the base-emitter junction of the connected to the electrical
as Thermalloy 2205, or Aavid transistor. Figure 15 shows ground of the system. This
Engineering 3215. These fixtures photocurrent being supplied from insures minimum capacitive
provide a stable reference plat- the anode of the photodiode to an coupling of the switching
form and their tapped mounting inverting input of the operational transients through the substrate
holes allow for ease of affixing amplifier. The circuit is recom- diodes to the detector amplifier
this assembly to the circuit board. mended to improve the reflected section.
photocurrent to stray photocur-
Electrical Operation rent ratio by keeping the The HBCS-1100 detector also
The detector section of the substrate diodes from acting as includes an NPN transistor which
sensor can be connected as a photodiodes. can be used to increase the
single photodiode or as a output current of the sensor. A
photodiode transistor amplifier. The cathode of the 700 nm current feedback amplifier as
When photodiode operation is emitter is physically and shown in Figure 6 provides
desired, it is recommended that electrically connected to the case- moderate current gain and bias
the substrate diodes be defeated substrate of the device. Applica- point stability.
by connecting the collector of the tions that require modulation or

Schematic Diagram Connection Diagram

VD VC
3
3 1 4 2
REFLECTOR
REFERENCE
PLANE
5 1 TOP VIEW

ANODE
VF 6
6 8
7
DS
DS
CATHODE 4
PIN FUNCTION
SUBSTRATE, CASE
1 TRANSISTOR COLLECTOR
2 TRANSISTOR BASE, PHOTODIODE ANODE
DS – SUBSTRATE DIODES 2 8 3 PHOTODIODE CATHODE
4 LED CATHODE, SUBSTRATE, CASE
VB VE
5 NC
6 LED ANODE
7 NC
8 TRANSISTOR EMITTER

CAUTION: The small junction sizes inherent to the design of this bipolar component increase the component's
susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be
taken in handling and assembly of this component to prevent damage and/or degradation which may be
introduced by ESD.

4-16
Absolute Maximum Ratings at TA = 25°C
Parameter Symbol Min. Max. Units Fig. Notes
Storage Temperature TS -40 +75 °C
Operating Temperature TA -20 +70 °C
Lead Soldering Temperature 260 for 10 sec. °C 11
1.6 mm from Seating Plane
Average LED Forward Current IF 50 mA 2
Peak LED Forward Current IFPK 75 mA 1 1
Reverse LED Input Voltage VR 5 V
Package Power Dissipation PP 120 mW 3
Collector Output Current IO 8 mA
Supply and Output Voltage VD, VC, VE -0.5 20 V 10
Transistor Base Current IB 5 mA
Transistor Emitter Base Voltage VEB 0.5 V

System Electrical/Optical Characteristics at TA = 25°C

Parameter Symbol Min. Typ. Max. Units Conditions Fig. Note
Total Photocurrent IP 575 nA TA = 20°C IF = 35 mA, 2, 3 4
(IPR + IPS) 150 250 375 TA = 25°C VD = VC = 5 V 15
80 TA = 70°C
Reflected Photocurrent IPR 4 8.5 IF = 35 mA, 3
(IPR) to Internal Stray IPS VC = VD = 5 V
Photocurrent (IPS)
Transistor DC Static hFE 50 TA = 20°C VCE = 5 V, 4, 5
Current Transfer Ratio 100 200 TA = 25°C IC = 10 µA
Slew Rate 0.08 V/µs RL = 100 K, IPK = 50 mA, 6
RF = 10 M, tON = 100 µs,
Rate = 1 kHz
Image Diameter d 0.17 mm IF = 35 mA, 8, 10 8, 9
= 4.27 mm (0.168 in.)
Maximum Signal Point 4.01 4.27 4.52 mm Measured from Reference 9
Plane
50% Modulation MTF 2.5 Inpr/mm IF = 35 mA, 10, 5, 7
Transfer Function =4.27 mm 11
Depth of Focus ∆ 1.2 mm 50% of IP at = 4.27 mm 9 5
FWHM
Effective Numerical N.A. 0.3
Aperture
Image Location D 0.51 mm Diameter Reference to 6
Centerline
= 4.27 mm
Thermal Resistance ΘJC 85 °C/W

4-17
Detector Electrical/Optical Characteristics at TA = 25°C
Parameter Symbol Min. Typ. Max. Units Conditions Fig. Note
Dark Current IPD 5 200 pA TA = 25°C IF = 0, VD = 5 V;
10 nA TA = 70°C Reflection = 0%
Capacitance CD 45 pF VD = 0 V, IP = 0, f = 1 MHz
Flux Responsivity Rφ 0.22 A/W λ = 700 nm, VD = 5 V 12
Detector Area AD 0.160 mm2 Square, with
Length = 0.4 mm/Side

Emitter Electrical/Optical Characteristics at TA = 25°C

Parameter Symbol Min. Typ. Max. Units Conditions Fig. Note
Forward Voltage VF 1.6 1.8 V IF = 35 mA 13
Reverse Breakdown Voltage BVR 5 V IR = 100 µA
Radiant Flux φE 5 9.0 µW IF = 35 mA, 14
λ = 700 nm
Peak Wavelength λp 680 700 720 nm IF = 35 mA 14
Thermal Resistance ΘJC 150 °C/W
Temperature Coefficient of VF ∆VF /∆T -1.2 mV/°C IF = 35 mA

Transistor Electrical Characteristics at TA = 25°C

Parameter Symbol Min. Typ. Max. Units Conditions Fig. Note
Collector-Emitter Leakage ICEO 1 nA VCE = 5 V
Base-Emitter Voltage VBE 0.6 V IC = 10 µA, IB = 70 nA
Collector-Emitter Saturation VCE(SAT) 0.4 V IB = 1 µA, IE = 10 µA
Voltage
Collector-Base Capacitance CCB 0.3 pF f = 1 MHz, VCB = 5 V
Base-Emitter Capacitance CBE 0.4 pF f = 1 MHz, VBE = 0 V
Thermal Resistance ΘJC 200 °C/W

Notes:
1. 300 µs pulse width, 1 kHz pulse rate.
2. Derate Maximum Average Current linearly from 65°C by 6 mA/°C.
3. Without heat sinking from TA = 65°C, derate Maximum Average Power linearly by 12 mW/°C.
4. Measured from a reflector coated with a 99% reflective white paint (Kodak 6080) positioned 4.27 mm (0.168 in.) from the
reference plane.
5. Peak-to-Peak response to black and white bar patterns.
6. Center of maximum signal point image lies within a circle of diameter D relative to the center line of the package. A second
emitter image (through the detector lens) is also visible. This image does not affect normal operation.
7. This measurement is made with the lens cusp parallel to the black-white transition.
8. Image size is defined as the distance for the 10%-90% response as the sensor moves over an abrupt black-white edge.
9. (+) indicates an increase in the distance from the reflector to the reference plane.
10. All voltages referenced to Pin 4.
11. CAUTION: The thermal constraints of the acrylic lens will not permit the use of conventional wave soldering procedures. The
typical preheat and post cleaning temperatures and dwell times can subject the lens to thermal stresses beyond the absolute
maximum ratings and can cause it to defocus.

4-18
 IF (MAX.) CURRENT TO TEMPERATURE DERATED
IFPK (MAX.) RATIO OF MAXIMUM OPERATING PEAK

(NORMALIZED AT IF = 35 mA, TA = 25 °C)

1.6
2.0 -20 °C
1.4

PHOTOCURRENT, IPR OR IPS

0 °C
1.8 25 °C
1.2
50 °C
MAXIMUM DC CURRENT

1.6 1.0
70 °C
0.8
1.4
0.6

100
300
1K
3K
30 K

10 K

Hz
Hz
0.4

H
Hz
1.2
H

z
z

0.2

1.0 0
1 10 100 1000 10,000 0 10 20 30 40 50 60 70 80

tP – PULSE DURATION (µs) IF – DC FORWARD CURRENT (mA)

Figure 1. Maximum Tolerable Peak Current vs. Pulse Figure 2. Relative Total Photocurrent
Duration. vs. LED DC Forward Current.

+5 V

REFLECTOR 3 1

REFERENCE
PLANE

IF = 35 mA ANODE
VF 6
+
HP 6177
DS

CATHODE 4 DS

SUBSTRATE, CASE 2 8
IP = IPR + IPS IP
+
NANOAMPERE METER
(KEITHLEY MODEL 480)
NOTES:
1. IP MEASUREMENT CONDITIONS ARE: = 4.34 mm,
KODAK 6080 PAINT REFLECTOR.
2. IPS MEASUREMENT CONDITIONS ARE: =
A CAVITY WHOSE DEPTH IS MUCH GREATER THAN
THE HBCS-1100 DEPTH OF FIELD.

Figure 3. IP Test Circuit.

4-19
(NORMALIZED AT IB = 100 nA, TA = 25 °C)

3.0 50
hFE – DC FORWARD CURRENT GAIN

IB – BASE CURRENT (nA)

IC – COLLECTOR CURRENT (µA)

TEMP = 25 °C nA
160
40
nA
140
2.0 nA
VCE = 5 V 120
30
nA
70 °C 100
25 °C
20 80 nA
1.0 -20 °C 60 nA
10 40 nA
20 nA
0 0
10 100 1000 10,000 0 2 4 6 8 10 12 14 16 18 20
IB – BASE CURRENT (nA) VCE – COLLECTOR-TO-EMITTER VOLTAGE (V)

Figure 4. Normalized Transistor DC Figure 5. Common Emitter Collector

Forward Current Gain vs. Base Characteristics.
Current at Temperature.

VCC = 5 V

RL 100 K

VO

REFLECTOR 3 1
REFERENCE RF 10 M
PLANE
IFPK = 50 mA
tP = 100 µs, ANODE
RATE = 1 KHz 6
VF
47 Ω
HP 8007
DS
DS
CATHODE 4
SUBSTRATE, CASE 2 8

Figure 6. Slew Rate Measurement Circuit.

EMITTER DETECTOR IMAGE

THROUGH EMITTER
LENS

MAXIMUM
SIGNAL POINT

DETECTOR EMITTER IMAGE

THROUGH DETECTOR
LENS

Figure 7. Image Location.

4-20
 0.4 110 110

% – REFLECTED PHOTOCURRENT

% – REFLECTED PHOTOCURRENT
100 100
SEE NOTES 7, 8, 9 90 90 90 %
d – IMAGE SIZE (mm)

0.3 80 80
70 70
60 60
0.2
50 ∆ 50
40 40

0.1 30 30
20 20
10 10 10 %
d
0 0 0
-0.4 -0.2 0 0.2 0.4 0.6 0.8 0 1 2 3 4 5 6 -0.3 -0.2 -0.1 0 0.1 0.2 0.3
∆ – DISTANCE FROM MAXIMUM SIGNAL (mm) – REFLECTOR DISTANCE (mm) ∆d – EDGE DISTANCE (mm)

Figure 8. Image Size vs. Maximum Figure 9. Reflector Distance vs. Figure 10. Step Edge Response.
Signal Point. Percent Reflected Photocurrent.

110 110 100

% AMPLITUDE MODULATION (P-P)

100 100

IF – INPUT CURRENT (mA)

90 90
80 80 10
% RESPONSE

70 70
60 60
1
50 50
40 40 IF
70 °C +
30 30 0.1 VF
25 °C
20 20
-
10 10
0 0 0.01
0 1 2 3 4 5 6 600 700 800 900 1000 1.3 1.4 1.5 1.6 1.7
SPATIAL FREQUENCY (LINE PAIR/mm) λ – WAVELENGTH (nm) VF – FORWARD VOLTAGE (V)

Figure 11. Modulation Transfer Figure 12. Detector Spectral Figure 13. LED Forward Current vs.
Function. Response. Forward Voltage Characteristics.

VCC

1.2 REFLECTOR 3 1
0 °C R2
REFERENCE
1.0 25 °C PLANE
RELATIVE RADIANT FLUX

R1
0.8 ANODE
70 °C 6
VF
0.6 IP

0.4 DS
DS
0.2 CATHODE 4 +
2 8 VOUT
SUBSTRATE, CASE
–
0
640 660 680 700 720 740 760
λ – WAVELENGTH (nm) VCC
VOUT = – IPRF RF
1 + R2/R1

Figure 14. Relative Radiant Flux vs. Figure 15. Photodiode Interconnection.
Wavelength.

4-21