XB5358D0

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One Cell Lithium-ion/Polymer Battery Protection IC

GENERAL DESCRIPTION FEATURES

The XB5358D0 product is a high · Protection of Charger Reverse
integration solution for lithium- Connection
ion/polymer battery protection. · Protection of Battery Cell Reverse
XB5358D0 contains advanced power Connection
MOSFET, high-accuracy voltage · Integrate Advanced Power MOSFET
detection circuits and delay circuits. with Equivalent of 45mΩ RSS(ON)
XB5358D0 is put into an ultra-small
· Ultra-small SOT23-5 Package
SOT23-5 package and only one
external component makes it an ideal · Only One External Capacitor
solution in limited space of battery pack. Required
XB5358D0 has all the protection functions · Over-temperature Protection
required in the battery application including · Overcharge Current Protection
overcharging, overdischarging, overcurrent · Three-step Overcurrent Detection:
and load short circuiting protection etc. The -Overdischarge Current 1
accurate overcharging detection voltage -Overdischarge Current 2
ensures safe and full utilization charging.
-Load Short Circuiting
The low standby current drains little current
from the cell while in storage. · Charger Detection Function
The device is not only targeted for digital · 0V Battery Charging Function
cellular phones, but also for any other - Delay Times are generated inside
Li-Ion and Li-Poly battery-powered · High-accuracy Voltage Detection
information appliances requiring long- · Low Current Consumption
term battery life. - Operation Mode: 2.8μ A typ.
- Power-down Mode: 1.5μ A typ.
· RoHS Compliant and Lead (Pb) Free

APPLICATIONS
One-Cell Lithium-ion Battery Pack
Lithium-Polymer Battery Pack

Figure 1. Typical Application Circuit

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ORDERING INFORMATION
Overcharg Overcharge Overdischarge Overdischarge Overcurrent
PART Pack e Detection Release Detection Release Detection
Voltage Voltage Voltage Voltage Top Mark
NUMBER age Current
[VCU] (V) [VCL] (V) [VDL] (V) [VDR] (V) [IOV1] (A)
SOT
XB5358D0 4.25 4.10 2.9 3.0 3.2 5358DYW (note)
23-5
Note: “YW” is manufacture date code, “Y” means the year, “W” means the week

PIN CONFIGURATION

Figure 2. PIN Configuration

PIN DESCRIPTION
XB5358D0 PIN
NUMBER PIN NAME PIN DESCRIPTION

1 VT Test pin；only for vendor not used by application

2 GND Ground, connect the negative terminal of the battery to this pin
3 VDD Power Supply
The negative terminal of the battery pack. The internal FET switch
4,5 VM
connects this terminal to GND

ABSOLUTE MAXIMUM RATINGS

(Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating
conditions for long periods may affect device reliability.)
PARAMETER VALUE UNIT
VDD input pin voltage -0.3 to 6 V
VM input pin voltage -6 to 10 V
Operating Ambient Temperature -40 to 85 °C

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Maximum Junction Temperature 125 °C
Storage Temperature -55 to 150 °C
Lead Temperature ( Soldering, 10 sec) 300 °C
Power Dissipation at T=25°C 0.4 W
Package Thermal Resistance (Junction to Ambient) θJA 250 °C/W
Package Thermal Resistance (Junction to Case) θJC 130 °C/W
ESD 2000 V

ELECTRICAL CHARACTERISTICS
Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified

Parameter Symbol Test Condition Min Typ Max Unit

Detection Voltage
4.20 4.25 4.30 V
Overcharge Detection Voltage VCU
4.05 4.10 4.15
Overcharge Release Voltage VCL V

2.80 2.9 3.00

Overdischarge Detection Voltage VDL V

2.90 3.0 3.10

Overdischarge Release Voltage VDR V
Charger Detection Voltage VCHA -0.07 -0.12 -0.2 V

Detection Current
Overdischarge Current1 Detection IIOV1 VDD=3.5V 2.3 3.2 4.1 A

Load Short-Circuiting ISHORT VDD=3.5V 10 20 30 A

Detection
Current Consumption
Current Consumption in Normal IOPE VDD=3.5V 2.8 6 μA
Operation VM =0V
Current Consumption in power IPDN VDD=2.0V 1.5 μA
Down VM pin floating
VM Internal Resistance
Internal Resistance between RVMD VDD=3.5V 320
VM and VDD VM=1.0V kΩ
Internal Resistance between VM RVMS VDD=2.0V 100
and GND VM=1.0V kΩ
FET on Resistance
Equivalent FET on Resistance RSS(ON) VDD=3.6V IVM =1.0A 45
mΩ
Over Temperature Protection
Over Temperature Protection TSHD+ 120

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Over Temperature Recovery Degree TSHD- 100 C

Detection Delay Time

Overcharge Voltage Detection tCU 130 mS
Delay Time
Overdischarge Voltage Detection tDL 40 mS
Delay Time
Overdischarge Current Detection tIOV VDD=3.5V 10 mS
Delay Time
Load Short-Circuiting Detection tSHORT VDD=3.5V 75 uS
Delay Time

Figure 3. Functional Block Diagram

FUNCTIONAL DESCRIPTION
The XB5358D0 monitors the voltage and or charger. These functions are required in
current of a battery and protects it from order to operate the battery cell within
being damaged due to overcharge voltage, specified limits.
overdischarge voltage, overdischarge The device requires only one external
current, and short circuit conditions by capacitor. The MOSFET is integrated and
disconnecting the battery from the load its RSS(ON) is as low as 45 mΩ typical.

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detection voltage (VCU) even if the load is
connected. In addition, if the VM pin
voltage is equal to or lower than the
Normal operating mode
overcurrent 1 detection voltage when a
If no exception condition is detected, load is connected and discharging starts,
charging and discharging can be carried the chip does not return to the normal
out freely. This condition is called the condition.
normal operating mode. Remark If the battery is charged to a voltage higher
than the overcharge detection voltage (VCU) and
the battery voltage does not drops below the
Overcharge Condition
overcharge detection voltage (VCU) even when a
When the battery voltage becomes higher heavy load, which causes an overcurrent, is
than the overcharge detection voltage (VCU) connected, the overcurrent 1 and overcurrent 2 do
during charging under normal condition not work until the battery voltage drops below the
overcharge detection voltage (VCU). Since an actual
and the state continues for the overcharge battery has, however, an internal impedance of
detection delay time (tCU) or longer, the several dozens of mΩ , and the battery voltage
XB5358D0 turns the charging control FET drops immediately after a heavy load which causes
off to stop charging. This condition is called an overcurrent is connected, the overcurrent 1 and
the overcharge condition. The overcharge overcurrent 2 work. Detection of load short-
condition is released in the following two circuiting works regardless of the battery voltage.
cases:
1, When the battery voltage drops below Overdischarge Condition
the overcharge release voltage (VCL), the When the battery voltage drops below the
XB5358D0 turns the charging control FET overdischarge detection voltage (VDL)
on and returns to the normal condition. during discharging under normal condition
2, When a load is connected and and it continues for the overdischarge
discharging starts, the XB5358D0 turns the detection delay time (tDL) or longer, the
charging control FET on and returns to the XB5358D0 turns the discharging control
normal condition. The release mechanism FET off and stops discharging. This
is as follows: the discharging current flows condition is called overdischarge condition.
through an internal parasitic diode of the After the discharging control FET is turned
charging FET immediately after a load is off, the VM pin is pulled up by the RVMD
connected and discharging starts, and the resistor
VM pin voltage increases about 0.7 V between VM and VDD in XB5358D0.
(forward voltage of the diode) from the Meanwhile when VM is bigger than 1.5
GND pin voltage momentarily. The V (typ.) (the load short-circuiting detection
XB5358D0 detects this voltage and voltage), the current of the chip is reduced
releases the overcharge condition. to the power-down current (IPDN). This
Consequently, in the case that the battery condition is called power-down condition.
voltage is equal to or lower than the The VM and VDD pins are shorted by the
overcharge detection voltage (VCU), the RVMD resistor in the IC under the
XB5358D0 returns to the normal condition overdischarge and power-down conditions.
immediately, but in the case the battery The power-down condition is released
voltage is higher than the overcharge when a charger is connected and the
detection voltage (VCU),the chip does not potential difference between VM and VDD
return to the normal condition until the becomes 1.3 V (typ.) or higher (load short-
battery voltage drops below the overcharge circuiting detection voltage). At this time,
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the FET is still off. When the battery If the VM pin voltage drops below the
voltage becomes the overdischarge charger detection voltage (VCHA) during
detection voltage (VDL) or higher (see note), charging under the normal condition and it
the XB5358D0 turns the FET on and continues for the overcharge detection
changes to the normal condition from the delay time (tCU) or longer, the XB5358D0
overdischarge condition. turns the charging control FET off and
Remark If the VM pin voltage is no less than the stops charging. This action is called
charger detection voltage (VCHA), when the battery abnormal charge current detection.
under overdischarge condition is connected to a
charger, the overdischarge condition is released
Abnormal charge current detection works
(the discharging control FET is turned on) as usual, when the discharging control FET is on
provided that the battery voltage reaches the and the VM pin voltage drops below the
overdischarge release voltage (VDU) or higher. charger detection voltage (VCHA). When an
abnormal charge current flows into a
Overcurrent Condition battery in the overdischarge condition, the
When the discharging current becomes XB5358D0 consequently turns the
equal to or higher than a specified value charging
(the VM pin voltage is equal to or higher control FET off and stops charging after
than the overcurrent detection voltage) the battery voltage becomes the
during discharging under normal condition overdischarge detection voltage and the
and the state continues for the overcurrent overcharge detection delay time (tCU)
detection delay time or longer, the elapses.
XB5358D0 turns off the discharging control Abnormal charge current detection is
FET to stop discharging. This condition is released when the voltage difference
called overcurrent condition. (The between VM pin and GND pin becomes
overcurrent lower than the charger detection voltage
includes overcurrent 1, overcurrent 2, or (VCHA) by separating the charger. Since the
load short-circuiting.) 0 V battery charging function has higher
The VM and GND pins are shorted priority than the abnormal charge current
internally by the RVMS resistor under the detection function, abnormal charge
overcurrent condition. When a load is current may not be detected by the product
connected, the VM pin voltage equals the with the 0 V battery charging function while
VDD voltage due to the load. the battery voltage is low.
The overcurrent condition returns to the
normal condition when the load is released Load Short-circuiting condition
and the impedance between the B+ and B- If voltage of VM pin is equal or below
pins becomes higher than the automatic short circuiting protection voltage (VSHORT),
recoverable impedance. When the load is the XB5358D0 will stop discharging and
removed, the VM pin goes back to the battery is disconnected from load. The
GND potential since the VM pin is shorted maximum delay time to switch current off is
the GND pin with the RVMS resistor. tSHORT. This status is released when voltage
Detecting that the VM pin potential is lower of VM pin is higher than short protection
than the overcurrent 1 detection voltage voltage (VSHORT), such as when
(VIOV1), the IC returns to the normal disconnecting the load.
condition.
Delay Circuits
Abnormal Charge Current Detection
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The detection delay time for overdischarge connected battery whose voltage is 0 V by
current 2 and load short-circuiting starts self-discharge. When a charger having 0 V
when overdischarge current 1 is detected. battery start charging charger voltage
As soon as overdischarge current 2 or load (V0CHA) or higher is connected between B+
short-circuiting is detected over detection and B- pins, the charging control FET gate
delay time for overdischarge current 2 or is fixed to VDD potential. When the voltage
load short- circuiting, the XB5358D0 stops between the gate and the source of the
charging control FET becomes equal to or
discharging. When battery voltage falls
higher than the turn-on voltage by the
below overdischarge detection voltage due
charger voltage, the charging control FET
to overdischarge current, the XB5358D0 is turned on to start charging. At this time,
stop discharging by overdischarge current the discharging control FET is off and the
detection. In this case the recovery of battery charging current flows through the internal
voltage is so slow that if battery voltage parasitic diode in the discharging control
after overdischarge voltage detection delay FET. If the battery voltage becomes equal
time is still lower than overdischarge to or higher than the overdischarge release
detection voltage, the XB5358D0 shifts to voltage (VDU), the normal condition returns.
power-down.
Note
(1) Some battery providers do not recommend
charging of completely discharged batteries. Please
refer to battery providers before the selection of 0 V
battery charging function.
(2) The 0V battery charging function has higher
priority than the abnormal charge current detection
function. Consequently, a product with the 0 V
battery charging function charges a battery and
abnormal charge current cannot be detected during
the battery voltage is low (at most 1.8 V or lower).
(3) When a battery is connected to the IC for the
first time, the IC may not enter the normal condition
Figure 4. Overcurrent delay time in which discharging is possible. In this case, set
the VM pin voltage equal to the GND voltage (short
0V Battery Charging Function (1) (2) (3) the VM and GND pins or connect a charger) to
enter the normal condition.
This function enables the charging of a

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TIMING CHART
1． Overcharge and overdischarge detection
VCU
VCU-VHC

Battery
voltage
VDL+VDH
VDL
ON

DISCHARGE

OFF
ON
CHARGE

OFF

VDD

VMVov1
VSS
VCHA

Charger connection
Load connection tCL
tCU

(1) (2) (1) (3) (1)

Figure5-1 Overcharge and Overdischarge Voltage Detection

2． Overdischarge current detection

VCU Battery
voltage
VCU-VHC

VDL+VDH
VDL

ON
DISCHARGE

OFF

VDD VM
VSHORT

Vov2
Vov1
VSS
Charger connection
Load connection

tIOV1 tIOV2 tSHORT

(1) (4) (1) (4) (1) (4) (1)

Figure5-2 Overdischarge Current Detection

Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)
Overcurrent condition

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3． Charger Detection

VCU
VCU-VHC

Battery
voltage
VDL+VDH
VDL

ON

DISCHARGE

OFF

VDD

VM
VSS
VCHA
Charger connection
Load connection

tDL

(1) (3) (1)

Figure5-3 Charger Detection

4． Abnormal Charger Detection

VCU
VCU-VHC

Battery
voltage
VDL+VDH
VDL

ON
DISCHARGE

OFF
ON
CHARGE

OFF

VDD

VM
VSS
VCHA

Charger connection
Load connection
tCU
tDL
(1) (3) (1) (2) (1)

Figure5-4 Abnormal Charger Detection

Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)
Overcurrent condition

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TYPICAL CHARACTERISTICS
(Test based on XB5358D0 version, VBAT = 3.6V, TA= 25C unless otherwise specified)
Internal FET On-Resistance vs. Junction Temperature

TYPICAL APPLICATION
As shown in Figure 6, the bold line is the high density current path which must be kept as
short as possible. For thermal management, ensure that these trace widths are adequate. C1
is a decoupling capacitor which should be placed as close as possible to XB5358D0.

Fig 6 XB5358D0 in a Typical Battery Protection Circuit

Precautions
• Pay attention to the operating conditions for input/output voltage and load current so that the
power loss in XB5358D0 does not exceed the power dissipation of the package.
• Do not apply an electrostatic discharge to this XB5358D0 that exceeds the performance ratings of the
built-in electrostatic protection circuit.

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PACKAGE OUTLINE
SOT23-5 PACKAGE OUTLINE AND DIMENSIONS

DIMENSION
DIMENSION
SYMB IN
IN INCHES
OL MILIMETERS
MIN MAX MIN MAX
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.300 0.400 0.012 0.016
c 0.100 0.200 0.004 0.008
D 2.820 3.020 0.111 0.119
E 1.500 1.700 0.059 0.067
E1 2.650 2.950 0.104 0.116
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.700 REF 0.028 REF
L1 0.300 0.600 0.012 0.024
θ 0° 8° 0° 8°

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DISCLAIMER

The information described herein is subject to change without notice.

Xysemi Inc. is not responsible for any problems caused by circuits or

diagrams described herein whose ralated industial properties,patents,or
other rights belong to third parties. The application circuit examples
explain typical applications of the products, and do not guarantee the
success of any specific mass-production design.

When the products described herein are regulated products subject to the
Wassenaar Arrangement or other arrangements, they may not be exported
without authorization from the appropriate governmental authority.

Use of the information described herein for other purposes and/or

reproduction or copying without express permission of Xysemi Inc. is
strictly prohibited.

The products described herein cannot be used as part of any device or

equipment affecting the human body,such as exercise equipment ,medical
equipment, security systems, gas equipment,or any aparatus installed in
airplanes and other vehicles,without prior written pemission of Xysemi Inc.

Although Xysemi Inc. exerts the greatest possible effort to ensure high
quality and reliability, the failure or malfunction of semiconductor may
occur. The use of these products should therefore give thorough
consideration to safty design,including redundancy, fire-prevention
measure and malfunction prevention, to prevent any accidents,fires,or
community damage that may ensue.

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