Sheet 1
1- Assume that you wish to bias the transistor in
   Figure(1) with IB=20µA. To what voltage must you
   change the VBB supply? What are IC and VCE at the
   Q-point, given that βDC=50?
2- Design a biased-transistor circuit using VBB=VCC=10V for a Q-point of
   IC=5mA and VCE=4V Assume βDC=100. The design involves finding RB, RC,
   and the minimum power rating of the transistor. (The actual power rating
   should be greater.) Sketch the circuit.
3- Determine whether the transistor in Figure(2) is
   biased in cutoff, saturation, or the linear region.
   Remember that . IC =βDCIB is valid only in the linear
   region
4- From the collector characteristic curves and the dc
   load line in
   Figure(3), determine the following:
   (a) Collector saturation current
   (b) VCE at cutoff
   (c) Q-point values of IB, IC, and VCE
5- 14. Determine all transistor terminal voltages with
   respect to ground in Figure(4).
6- (a) Determine VB in Figure(5).
    (b) How is VB affected if the transistor is replaced by
   one with a βDC=50?
7- Analyze the circuit in Figure(6) to determine the correct
   voltages at the transistor terminals with respect to ground.
   Assume βDC=100
8- Determine VB, VC, and IC in Figure(7).
9-
10-