Transistors

2SC3311A
Silicon NPN epitaxial planar type

For low-frequency amplification Unit: mm

Complementary to 2SA1309A 4.0±0.2 2.0±0.2

3.0±0.2
(0.8)
■ Features

7.6
0.75 max.

(0.8)
• Optimum for high-density mounting
• Allowing supply with the radial taping

15.6±0.5
■ Absolute Maximum Ratings Ta = 25°C

ue e/
Parameter Symbol Rating Unit
0.45+0.20
–0.10

tin nc
Collector-base voltage (Emitter open) VCBO 60 V 0.45+0.20

e)
(2.5) (2.5) –0.10

d
typ
Collector-emitter voltage (Base open) VCEO 50 V 0.7±0.1

d
on e.
ue
Emitter-base voltage (Collector open) VEBO 7 V

isc ag
1: Emitter

tin
, d st
on na
Collector current IC 100 mA 2: Collector
1 2 3

ed cle
3: Base
Peak collector current ICP 200 mA

yp cy
NS-B1 Package

d t ife
Collector power dissipation PC 300 mW

ue t l
tin uc
Junction temperature Tj 150 °C
sc te

on rod
−55 to +150 °C
isc r P
Storage temperature Tstg
d d fou
Di ain

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pla wi
e, ollo

■ Electrical Characteristics Ta = 25°C ± 3°C

typ s f
ce de
an clu

Parameter Symbol Conditions Min Typ Max Unit

en in
M

IC = 10 µA, IE = 0
int ed

Collector-base voltage (Emitter open) VCBO 60 V

ma inu

Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V

e, ont

Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V

typ isc
ce /D

Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA

an ce
en an

Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 1 µA

int ten

Forward current transfer ratio * hFE VCE = 10 V, IC = 2 mA 160 460 

ma ain
M

Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V

Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz
ed

Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF

lan

(Common base, input open circuited)

(p

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S No-rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank is not classified and have no indication for rank.

Publication date: March 2003 SJC00127BED 1

 2SC3311A

PC  Ta IC  VCE IC  VBE
500 60 200
Ta = 25°C VCE = 10 V
Collector power dissipation PC (mW)

50
400 160

Collector current IC (mA)

Collector current IC (mA)

IB = 160 µA
40
300 140 µA 120
120 µA 25°C
30
100 µA
200 80
20 80 µA Ta = 75°C −25°C

60 µA
100 40 µA 40
10
20 µA

0 0 0
0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0

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Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

tin nc

e)
VCE(sat)  IC hFE  IC fT  I E

d
typ
100 600 300
IC / IB = 10

d
VCE = 10 V
Collector-emitter saturation voltage VCE(sat) (V)

VCE = 10 V

on e.
ue
f = 100 MHz

isc ag
tin
Ta = 25°C

, d st
on na
500
FE

250

ed cle
on Prod f (MHz)
Forward current transfer ratio h

10

yp cy
d t ife
400 Ta = 75°C 200

ue t l
tin uc
isc frequency 25°C
sc te

1 300 −25°C 150

r
d d fou
Transition

200 100
Di ain

ne ng

25°C Ta = 75°C
0.1
pla wi
e, ollo

−25°C 100 50
typ s f
ce de

0.01 0 0
an clu

0.1 1 10 100 0.1 1 10 100 − 0.1 −1 −10 −100

en in
M

Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

int ed
ma inu
e, ont
typ isc

Cob  VCB NV  IC
ce /D
an ce

10 240
VCE = 10 V
C (pF)

IE = 0
en an

f = 1 MHz Function = FLAT

int ten

Ta = 25°C
(Common base, input open circuited) ob

Ta = 25°C 200
ma ain

8
M
Noise voltage NV (mV)

160
6
ed
Collector output capacitance

lan

120
Rg = 100 kΩ
(p

4
80
20 kΩ
2 4.7 kΩ
40

0 0
1 10 100 10 100 1 000
Collector-base voltage VCB (V) Collector current IC (µA)

2 SJC00127BED
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ue e/
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tin nc
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e)
d
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yp
defect which may arise later in your equipment.

dt
on e.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

ue
isc ag
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

tin
, d st
on na
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

ed cle
yp cy
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

d t ife
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tin uc
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
sc te

on rod
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
isc r P

Electric Industrial Co., Ltd.

d d fou
Di ain

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typ s f
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en in
M

int ed
ma inu
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typ isc
ce /D
an ce
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int ten
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