BD244C

High Power Bipolar Transistor

TO-220, General Purpose Features:
• PNP plastic power transistors.
• General purpose amplifier and switching applications.

TO-220 Plastic Package

Dimensions Minimum Maximum

A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D - 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J - 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N - 31.24
O 7°
Dimensions : Millimetres
Pin Configuration:
1. Base
2. Collector
3. Emitter
4. Collector

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 BD244C
High Power Bipolar Transistor
Absolute Maximum Ratings
Characteristic Symbol BD244C Unit
Collector-Base Voltage (Open Emitter) VCBO
100 V
Collector Emitter Voltage (Open Base) VCEO
Collector Current IC 6.0 A
Total Power Dissipation upto TC = 25°C Ptot Maximum 65 W
Junction Temperature Tj 150 °C
Collector Current Saturation Voltage
VCE (Sat) 1.5
IC = 6A, IB = 1A
V
DC Current Gain
hFE Minimum 30
IC = 0.3A; VCE = 4V

Ratings (at TA = 25°C unless otherwise specified)

Limiting Values

Collector-Base Voltage (Open Emitter) VCBO

100
Collector Emitter Voltage (Open Base) VCEO V
Emitter-Base Voltage (Open Collector) VEBO 5.0
Collector Current 6.0
IC
Collector Current (Peak) Maximum 10 A
Base Current IB 2.0
Total Power Dissipation upto TC = 25°C Ptot 65 W
Junction Temperature Tj 150
°C
Storage Temperature Tstg -65 to +150
Thermal Resistance
From Junction to Case Rth (j-c) - 1.92 °C/W
Characteristics
Tamb = 25°C unless otherwise specified
Collector Cut off Current
ICEO 0.7
IB = 0; VCE = 60V
ICES 0.4
VBE = 0; VCE = VCEO Maximum mA
Emitter Cut off Current
IEBO 1.0
IC = 0; VEB = 5V
Breakdown Voltages
VCEO (Sus)* 100
IC = 30mA; IB = 0
VCBO Minimum 100
IC = 1mA; IE = 0
VEBO 5.0
IE = 1mA; IC = 0
V
Saturation Voltage
VCE (sat)* 1.5
IC = 6A; IB = 1A
Maximum
Base Emitter On Voltage
VBE (on)* 2.0
IC = 6A; VCE = 4V
DC Current Gain
IC = 0.3A; VCE = 4V hFE* 30
Minimum -
15
IC = 3A; VCE = 4V

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 BD244C
High Power Bipolar Transistor
Characteristics
Tamb = 25°C unless otherwise specified
Small Signal Current Gain
hfe 20 -
IC = 0.5A; VCE = 10V; f = 1KHz
Minimum
Transition Frequency
fT (1) 3 MHz
IC = 0.5A; VCE = 10V; f = 1MHz
* Pulse Test: Pulse Width ≤300µs; Duty Cycle ≤2%.
(1) fT = |hfe| • ftest

Specifications
IC (av) VCEO hFE Ptot
Maximum Maximum Minimum at 25°C Type Part Number
(A) (V) at IC = 0.3A (W)

6 100 30 65 PNP BD244C

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 BD244C
High Power Bipolar Transistor
Notes:

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