Assignment_Week_1: Analysis of CMOS Inverter
1. Derive the expression for the switching point of a CMOS inverter
2. Explain the DC characteristics of a CMOS inverter with necessary diagrams.
3. Discuss the variation in switching point of a CMOS inverter with changes in βp/βn ratio.
4. Find the ratio βp⁄βn needed to obtain an inverter midpoint voltage V M=1.3V with power supply
of VDD=3V. Assume that VTn=0.6V and VTp=-0.82V. What would be the relative device size if
K’n=110µA/V2 and the mobility values are related by µn=2.2µp. Also find the relative widths of
MOS devices.
5. An inverter uses FETs with β n=2.1 mA/V2 and βp=1.8 mA/V2. The threshold voltages are given
as VTn=0.6V & VTp=-0.7V & the power supply has a value of V DD=5V. the parasitic FET
Capacitance at the output node is estimated to be CFET = 74 fF.
a) Find the mid-point voltage VM.
b) Find the values of Rn & Rp.
c) Calculate the rise & fall times at the output when CL=0, and when CL=115fF.
d) Plot tr & tf as a function of CL
e) Find the maximum frequency of operation
6. Calculate the noise margin for a CMOS inverter operating at 3.3V with V tn=0.7V, Vtp=-0.7V,
βp=βn. What would you do to the transistor characteristics to improve the noise margin?