BTW69-800
Datasheet
50 A 800 V SCR in TOP3 insulated
A Features
• Max. repetitive blocking voltage = VDRM, VRRM = 800 V
G
• IGT maximum = 80 mA
K
• ECOPACK®2 component (RoHS and HF compliance)
• Complies with UL 1557 standard (File ref : E81734)
Application
K • Solid state relays
A
G • Welding equipment
TOP3 Isolated • High power motor control
• Heating systems
• Controlled AC/DC bridge
Description
Product status link
Available in a high power package TOP3-I, the BTW69-800 is suitable in applications
BTW69-800 where power handling and power dissipation are critical, such as solid state relays,
welding equipment, high power motor control and power converters.
This device offers a superior performance in surge current handling capabilities,
Product summary
allowing usage in industrial environment.
IT(RMS) 50 A
Thanks to its internal ceramic pad, it provide high voltage insulation (2500VRMS),
VDRM/VRRM 800 V complying with UL standards (file ref: E81734).
IGT 80 mA
DS13093 - Rev 2 - July 2023 www.st.com
For further information contact your local STMicroelectronics sales office.
BTW69-800
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings
Symbol Parameters Value Unit
IT(RMS) RMS on-state current (180° conduction angle) Tc = 75 °C 50 A
Average on-state current
IT(AV) Tc = 75 °C 32 A
(180° conduction angle)
tp = 8.3 ms 610
ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C, VR = 0 V) A
tp = 10 ms 580
I2t I2t value for fusing tp = 10 ms, Tj = 25°C 1680 A2s
Critical rate of rise of on-state current
dl/dt F = 60 Hz Tj = 125 °C 50 A/µs
IG = 2 x IGT , tr ≤ 100 ns
IGM Peak gate current tp = 20 µs Tj = 125 °C 8 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg Storage junction temperature range -40 to +150 °C
Tj Operating junction temperature range -40 to +125 °C
VGRM Maximum peak reverse gate voltage 5 V
Vins Insulation RMS voltage, 1 minute 2500 V
Table 2. Electrical characteristics (Tj = 25°C, unless otherwise specified)
Symbol Test conditions Tj Value Unit
Min. 8
IGT mA
VD = 12 V, RL = 33 Ω Max 80
VGT Max 1.3 V
VGD VD = VDRM, RL = 3.3 kΩ 125 °C Min. 0.2 V
IH IT = 500 mA, gate open Max. 150 mA
IL IG = 1.2 x IGT Max. 200 mA
dV/dt VD = 67 %, VDRM gate open 125 °C Min. 1000 V/µs
VTM ITM = 100 A, tp = 380 μs Max. 1.9 V
VTO Threshold on-state voltage 125 °C Max. 1.0 V
RD On-state dynamic resistance 125 °C Max. 8.5 mΩ
25 °C 10 µA
IDRM/IRRM VD = VDRM, VR = VRRM Max.
125 °C 5 mA
Table 3. Thermal resistance
Symbol Parameters Value Unit
Rth(j-c) Junction to case (D.C) 0.9
°C/W
Rth(j-a) Junction to ambiant (D.C) 50
DS13093 - Rev 2 page 2/9
BTW69-800
Characteristics (curves)
1.1 Characteristics (curves)
Figure 1. Maximum average power dissipation versus Figure 2. Average on-state current versus case
average on-state current temperature
IT(AV)(A)
P(W) 60
55
DC
50 α = 180 °
50
45
40
40
35 α = 180 °
30
30
25
20
20
15 360° 360°
10
5 10
IT(AV)(A)
0 Tc (°C)
0 10 20 30 40 0
0 25 50 75 100 125
Figure 3. Relative variation of thermal impedance versus
pulse duration Figure 4. Relative variation of gate trigger current, holding
current and latching current versus junction temperature
K = [Zth / Rth]
IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25 °C]
1.E+00 2.5
2.0
Zth (j-c) IGT
Zth (j-a) 1.5
1.E-01
1.0 IH and IL
0.5
tp(s) Tj (°C)
1.E-02
0.0
1.E-03 1.E-01 1.E+01 1.E+03
-40 10 60 110
Figure 6. Non repetitive surge peak on-state current for a
Figure 5. Surge peak on-state current versus number of
sinusoidal pulse with width tp< 10 ms, and corresponding
cycles (VR = 0 V)
value of I²t (VR = 0 V)
ITSM(A) 2
ITSM(A) ,I t (A s)
2
600 10000
Tj initial=25°C
500
t=10ms
Non repetitive
Tj initial = 25 °C One cy cle dI/dt limitation:
400 50A/µs ITSM
300 Repetitive
Tc = 75 °C 1000
200
100
Number of cycles
0
t p (ms)
1 10 100 1000 100
0.01 0.10 1.00 10.00
DS13093 - Rev 2 page 3/9
BTW69-800
Characteristics (curves)
Figure 7. On-state characteristics (maximum values)
ITM(A)
1000
100
TJ = 125 °C
10
1
TJ = 25 °C TJ max:
Vt0 = 1 V
VTM(V) Rd = 8.5 mΩ
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DS13093 - Rev 2 page 4/9
BTW69-800
Package information
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1 TOP3 Ins. package information
• ECOPACK (lead-free plating and halogen free package compliance)
• Lead-free package leads finishing
• Halogen-free molding compound resin meets UL94 standard level V0
• Recommended torque: 1.05 N·m (max. torque: 1.2 N·m)
Figure 8. Package outline
DS13093 - Rev 2 page 5/9
BTW69-800
TOP3 Ins. package information
Table 4. Mechanical data
Dimensions
Ref. mm Inches(1)
Min. Typ. Max. Min. Typ. Max.
A 4.40 4.60 0.1732 0.1811
B 1.45 1.55 0.0571 0.0610
C 14.35 15.60 0.5650 0.6142
D 0.50 0.70 0.0197 0.0276
E 2.70 2.90 0.1063 0.1142
F 15.80 16.50 0.6220 0.6496
G 20.40 21.10 0.8031 0.8307
H 15.10 15.50 0.5945 0.6102
J 5.40 5.65 0.2126 0.2224
K 3.40 3.65 0.1339 0.1437
L 4.08 4.17 0.1606 0.1642
P 1.10 1.30 0.0430 0.0510
R 4.60 0.1811
1. Inches given for reference only
DS13093 - Rev 2 page 6/9
BTW69-800
Ordering information
3 Ordering information
Figure 9. Ordering information scheme
BTW 69 - 800 RG
Standard SCR series
Type
69 = 50 A
Voltage
800 = 800 V
Packing mode
RG = Tube
Table 5. Ordering information
Order code Marking Package Weight Base qty. Delivery mode
BTW69-800RG BTW69800 TOP3 Ins. 4.5 g 30 Tube
DS13093 - Rev 2 page 7/9
BTW69-800
Revision history
Table 6. Document revision history
Date Revision Changes
09-Sep-2019 1 Initial release.
27-Jul-2023 2 Updated Table 4. Mechanical data.
DS13093 - Rev 2 page 8/9
BTW69-800
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DS13093 - Rev 2 page 9/9