SMD Type Transistors

SMD Type
NPN Transistors
KST8050S
SOT-23 Unit: mm
2.9 -0.1
+0.1

0.4 -0.1
+0.1

0.4
+0.1
2.4 -0.1

+0.1
1.3 -0.1
Features
Collector Current: IC=0.5A

0.55
1 2

0.95 -0.1
+0.1
0.1 -0.01
+0.05

1.9 -0.1
+0.1

+0.1
0.97 -0.1
1.Base

2.Emitter

+0.1
0.38 -0.1
0-0.1
3.collector

Absolute Maximum Ratings Ta = 25

Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current -Continuous IC 0.5 A
Collector Dissipation PC 0.3 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 to 150

Electrical Characteristics Ta = 25
Parameter Symbol Testconditi ons Min Typ Max Unit
Collector-base breakdown voltage VCBO IC = 100 u A, I E =0 40 V
Collector-emitter breakdown voltage VCEO IC = 1mA , IB = 0 25 V
Emitter-base Breakdown voltage VEBO IE = 100 u A, I C =0 5 V
Collector-base cut-off current ICBO VCB = 40 V , IE = 0 0.1 A
Collector-emitter cut-off current ICEO VCE = 20 V , IB = 0 1 A
Emitter-base cut-off current IEBO VEB = 5 V , IC = 0 0.1 A
VCE = 1 V , IC = 50 mA 120 400
DC current gain hFE
VCE = 1 V , IC = 500 mA 50
Collector-emitter saturation voltage VCE(sat) IC = 500 mA , IB = 50 mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC = 500 mA , IB = 50 mA 1.2 V
Transition frequency fT VCE = 6 V , IC = 20 mA , f = 30 MHz 150 MHz

■ Classification of hfe(1)
Type KST8050S KST8050S-L KST8050S-H KST8050S-J
Range 200-350 120-200 144-202 300-400
Marking J3Y

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 SMD Type Transistors
SMD Type
KST8050S

Typical Characteristics
Static Characteristic hFE —— IC
100 1000

COMMON COMMON EMITTER

400uA EMITTER VCE=1V
Ta=25℃
(mA)

80 350uA Ta=100℃

hFE
300uA
IC

Ta=25℃

DC CURRENT GAIN
COLLECTOR CURRENT

60
250uA
100
200uA
40
150uA

100uA
20

IB=50uA
0 10
0 4 8 12 16 20 1 3 10 30 100 500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
500 1.2

300
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
VOLTAGE VCEsat (mV)

0.8 Ta=25℃

100

Ta=100℃

Ta=100℃
0.4
30 Ta=25℃

β=10 β=10
10 0.0
1 3 10 30 100 500 1 3 10 30 100 500

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE Cob/ Cib —— VCB/ VEB

500 100
COMMON EMITTER f=1MHz
VCE=1V IE=0/ IC=0
100 Ta=25℃
Cib
(mA)

30
(pF)

30
IC

Ta=25℃
COLLECTOR CURRENT

10
Ta=100℃ 10 Cob
CAPACITANCE

1
3

0.3

0.1 1
0.2 0.4 0.6 0.8 1.0 0.1 0.3 1 3 10 20

BASE-EMMITER VOLTAGE VBE (V) REVERSE VOLTAGE V (V)

fT —— IC PC —— Ta
1000 400
VCE=6V
Ta=25℃
(MHz)

COLLECTOR POWER DISSIPATION

300
fT
TRANSITION FREQUENCY

PC (mW)

100 200

100

10 0
10 30 100 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃)

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