Power Transistors www.jmnic.
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2SC3694
Silicon NPN Transistors
Features BCE
With TO-220Fa package
High speed ,power switching applications
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 15 A
PC Collector power dissipation 30 W
Tj Junction temperature 150
Tstg Storage temperature -55~150 TO-220Fa
Electrical Characteristics Tc=25
SYMBOL PARAMETER CONDITIONS MIN Typ. MAX UNIT
ICBO Collector cut-off current VCB=60V; IE=0 10 uA
IEBO Emitter cut-off current VEB=5V; IC=0 10 uA
ICEO Collector cut-off current
VCBO Collector-base breakdown voltage
VCEO(SUS) Collector-emitter Sustaining voltage IC=30mA; IB=0 60 V
VEBO Emitter-base breakdown voltage
VCE(sat-1) Collector-emitter saturation voltages IC=12A; IB=0.6A 0.5 V
VCE(sat-2) Collector-emitter saturation voltages
hFE-1 Forward current transfer ratio IC=3A; VCE=2V 100 400
hFE-2 Forward current transfer ratio
VBE(sat)1 Base-emitter saturation voltages IC=12A; IB=0.6A 1.5 V
VBE(sat)2 Base-emitter saturation voltages
fT Transition frepuency IC=1A; VCE=10V 120 MHz
Cob Collector Out put Capacitance IC=0, VCB=10V f=1MHz 180 pF
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