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TO-92S Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co., LTD

This document provides specifications for a TO-92S plastic-encapsulated NPN transistor (2SC2389S) including: 1) Maximum ratings for voltage, current, power dissipation, and temperature. 2) Electrical characteristics including breakdown voltages, cut-off currents, current gain, saturation voltage, output capacitance, and transition frequency. 3) Classification of current gain into ranks.

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66 views1 page

TO-92S Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co., LTD

This document provides specifications for a TO-92S plastic-encapsulated NPN transistor (2SC2389S) including: 1) Maximum ratings for voltage, current, power dissipation, and temperature. 2) Electrical characteristics including breakdown voltages, cut-off currents, current gain, saturation voltage, output capacitance, and transition frequency. 3) Classification of current gain into ranks.

Uploaded by

Johnnys
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-92S Plastic-Encapsulate Transistors

TO – 92S

2SC2389S TRANSISTOR (NPN)


1. EMITTER

FEATURES 2. COLLECTOR
z High Breakdown Voltage.
3. BASE
z Complements the 2SA1038S.

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit


VCBO Collector-Base Voltage 120 V
VCEO Collector-Emitter Voltage 120 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 50 mA
PC Collector Power Dissipation 300 mW
RθJA Thermal Resistance From Junction To Ambient 417 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit


Collector-base breakdown voltage V(BR)CBO IC=50µA,IE=0 120 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 120 V
Emitter-base breakdown voltage V(BR)EBO IE=50µA,IC=0 5 V
Collector cut-off current ICBO VCB=100V,IE=0 0.5 μA
Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA
DC current gain hFE VCE=6V, IC=2mA 180 560
Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.5 V
Collector output capacitance Cob VCB=12V,IE=0, f=1MHz 2.5 pF
Transition frequency fT VCE=12V,IC=2mA, f=100MHz 140 MHz

CLASSIFICATION OF hFE
RANK R S
RANGE 180-390 270-560

A,Dec,2010

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