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TPT5609 NPN Transistor Specs

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38 views1 page

TPT5609 NPN Transistor Specs

tpt

Uploaded by

arad electronic
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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TPT5609

TO-92L
TPT5609 TRANSISTOR (NPN)

1. EMITTER
FEATURES
Power dissipation 2. COLLECTOR

PCM: 1 W (Tamb=25℃) 3. BASE

Collector current
ICM: 1 A
Collector-base voltage
V(BR)CBO: 25 V 123
Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=10µA, IE=0 25 V

Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 20 V

Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V

Collector cut-off current ICBO VCB=20V, IE=0 1 µA

Emitter cut-off current IEBO VEB=5V, IC=0 1 µA

DC current gain hFE VCE=2V, IC=500mA 60 240

Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V

Base-emitter voltage VBE VCE=2V, IC=500mA 1 V

Transition frequency fT VCE=2V, IC=500mA 190 MHz

Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 22 pF

CLASSIFICATION OF hFE
Rank A B C
Range 60-120 85-170 120-240

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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