MDP10N027TH – Single N-Channel Trench MOSFET 100V

MDP10N027TH
Single N-channel Trench MOSFET 100V, 120A, 2.8mΩ

General Description Features

The MDP10N027TH uses advanced Magnachip’s MOSFET  VDS = 100V
Technology, which provides high performance in on-state resistance,  ID = 120A @VGS = 10V
fast switching performance, and excellent quality.  Very low on-resistance RDS(ON)
< 2.8 mΩ @VGS = 10V
These devices can also be utilized in industrial applications  100% UIL Tested
such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter,  100% Rg Tested
and general purpose applications.

G G
D
S
TO-220 S

Absolute Maximum Ratings (TJ = 25 oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 100 V

Gate-Source Voltage VGSS ±20 V

o
TC=25 C (Silicon Limited) 272
(1)
Continuous Drain Current o
TC=25 C (Package Limited) ID 120
A
o
TC=100 C (Silicon Limited) 192
Pulsed Drain Current (2) IDM 480

TC=25oC 416
Power Dissipation PD W
TC=100oC 208

Single Pulse Avalanche Energy (3) EAS 512 mJ

o
Junction and Storage Temperature Range TJ, Tstg -55~175 C

Thermal Characteristics
Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient RθJA 62.5

o
C/W
Thermal Resistance, Junction-to-Case RθJC 0.36

Jan. 2021. Version 1.2 1 Magnachip Semiconductor Ltd.

 MDP10N027TH – Single N-Channel Trench MOSFET 100V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDP10N027TH -55~175 C TO-220 Tube Halogen Free

Electrical Characteristics (TJ =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 100V, VGS = 0V - - 1.0
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 50A - 2.5 2.8 mΩ
Forward Transconductance gfs VDS = 10V, ID = 50A - 110 - S
Dynamic Characteristics
Total Gate Charge Qg - 147 -
VDS = 50V, ID = 50A,
Gate-Source Charge Qgs - 42 - nC
VGS = 10V
Gate-Drain Charge Qgd - 28 -
Input Capacitance Ciss - 10,420 -
VDS = 40V, VGS = 0V,
Reverse Transfer Capacitance Crss - 36 - pF
f = 1.0MHz
Output Capacitance Coss - 2,050 -
Turn-On Delay Time td(on) - 33 -
Rise Time tr VGS = 10V, VDS = 50V, - 20 -
ns
Turn-Off Delay Time td(off) ID = 50A , RG = 3.0Ω - 123 -
Fall Time tf - 45 -
Gate Resistance Rg f=1 MHz - 3.0 - Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V
Body Diode Reverse Recovery Time trr - 98 ns
IF = 50A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 275 nC

Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. Pulse width limited by TJmax
3. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 32A, VGS = 10V.

Jan. 2021. Version 1.2 2 Magnachip Semiconductor Ltd.

 MDP10N027TH – Single N-Channel Trench MOSFET 100V
4.0
200
VGS = 15V

Drain-Source On-Resistance [mohm]

8.0V
180 6.0V
3.5
160
10.0V
ID, Drain Current [A]

140 3.0
5.0V
120 VGS = 10V

100 2.5

80
2.0
60

40
1.5
4.0V
20

0 1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

2.5 20
1. VGS = 10 V ID = 50A
18
2. ID = 50 A

16
Drain-Source On-Resistance
2.0
Drain-Source On-Resistance

14
RDS(ON), (Normalized)

RDS(ON) [mohm],

1.5 12

10

8
1.0

6 TJ= 25C

4
0.5
2

0
0.0 3 4 5 6 7 8 9 10
-50 -25 0 25 50 75 100 125 150 175
o VGS, Gate to Source Volatge [V]
TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

100
100 VGS = 0V
VDS = 10V
90
IDR, Reverse Drain Current [A]

80
ID, Drain Current [A]

70

60 10
TJ=25C
50
TJ=25C
40

30
1
20

10

0
0 1 2 3 4 5 6 7 8 0.0 0.3 0.6 0.9 1.2 1.5

VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jan. 2021. Version 1.2 3 Magnachip Semiconductor Ltd.

 MDP10N027TH – Single N-Channel Trench MOSFET 100V
10 16000
ID = 50A Ciss = Cgs + Cgd (Cds = shorted)

14000 Coss = Cds + Cgd

VDS = 50V
Crss = Cgd
8 Ciss
12000
VGS, Gate-Source Voltage [V]

Capacitance [pF]
10000
6

8000
1. VGS = 0 V
4 6000 2. f = 1 MHz
Coss

4000
2
2000 Crss

0
0 0 10 20 30 40
0 20 40 60 80 100 120 140 160

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

300
3
10

10 us 250

2
100 us
10
ID, Drain Current [A]
ID, Drain Current [A]

200

1 ms

Operation in This Area 10 ms 150

1 -- --
10 is Limited by R DS(on) -- --
-- -- DC 100 ms
-- --
-- -- 100

0
10
50
Single Pulse
TJ=Max rated
o
TC=25C
10
-1 0
10
-1
10
0 1
10 10
2 25 50 75 100 125 150 175

VDS, Drain-Source Voltage [V] TC, Case Temperature [C ]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature

0
10

D=0.5
-1
10
Zthjc( C/W)

0.2

0.1
o

0.05
-2
10 0.02
0.01
Single pulse
،‫ ط‬Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * ZthJC + TC
-3
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
tP(s)

Fig.11 Transient Thermal Response

Curve

Jan. 2021. Version 1.2 4 Magnachip Semiconductor Ltd.

 MDP10N027TH – Single N-Channel Trench MOSFET 100V
Package Dimension

TO-220

Dimensions are in millimeters unless otherwise specified

Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.

Jan. 2021. Version 1.2 5 Magnachip Semiconductor Ltd.

 MDP10N027TH – Single N-Channel Trench MOSFET 100V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip
Semiconductor Ltd.

Jan. 2021. Version 1.2 6 Magnachip Semiconductor Ltd.