MDE1991RH– Single N-Channel Trench MOSFET 100V

MDE1991RH
Single N-channel Trench MOSFET 100V, 120A, 4.4mΩ

General Description Features

The MDE1991RH uses advanced Magnachip’s MV MOSFET  VDS = 100V
Technology, which provides high performance in on-state resistance,  ID = 120A @VGS = 10V
fast switching performance, and excellent quality.  Very low on-resistance RDS(ON)
< 4.4 mΩ @VGS = 10V
These devices can also be utilized in industrial applications  100% UIL Tested
such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter,
and general purpose applications.

D
D

G
S
S
TO-263

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 100 V

Gate-Source Voltage VGSS ±20 V

o
TC=25 C (Silicon Limited) 159

Continuous Drain Current (1) TC=25oC (Package Limited) ID 120

A
TC=100oC 100

Pulsed Drain Current (3) IDM 480

o
TC=25 C 223
Power Dissipation PD W
o
TC=100 C 89

Single Pulse Avalanche Energy (2) EAS 392 mJ

o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5
o
C/W
Thermal Resistance, Junction-to-Case RθJC 0.56

Jun. 2021. Ver.1.3 1 Magnachip Semiconductor Ltd.

 MDE1991RH– Single N-Channel Trench MOSFET 100V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDE1991RH -55~150 C TO-263 Reel Halogen Free

Electrical Characteristics (TJ =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 2.9 4.0
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1.0
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 50A - 3.7 4.4 mΩ
Forward Transconductance gfs VDS = 10V, ID = 50A - 140 - S
Dynamic Characteristics
Total Gate Charge Qg - 115 -
VDS = 50V, ID = 50A,
Gate-Source Charge Qgs - 28 - nC
VGS = 10V
Gate-Drain Charge Qgd - 26 -
Input Capacitance Ciss - 7300 -
VDS = 40V, VGS = 0V,
Output Capacitance COss - 1360 - pF
f = 1.0MHz
Reverse Transfer Capacitance CRss - 50 -
Turn-On Delay Time td(on) - 30 -
Rise Time tr VGS = 10V, VDS = 50V, - 20 -
ns
Turn-Off Delay Time td(off) ID = 50A , RG = 3.0Ω - 99 -
Fall Time tf - 37 -
Gate Resistance Rg f=1 MHz - 2.5 - Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V
Body Diode Reverse Recovery Time trr - 73 - ns
IF = 50A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 150 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 28.0A, VGS = 10V.
3. Pulse width limited by TJmax

Jun. 2021. Ver.1.3 2 Magnachip Semiconductor Ltd.

 MDE1991RH– Single N-Channel Trench MOSFET 100V
200 4.4
6.0V

Drain-Source On-Resistance [m§‫]ظ‬

180
7.0V 4.2
160
8.0V
ID, Drain Current [A]

140 VGS = 10V 5.0V

4.0
120 VGS = 10V

100 3.8

80
4.5V
3.6
60

40
3.4
4.0V
20

0 3.2
0 1 2 3 4 5 0 50 100 150 200

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

2.5 20
،‫ ط‬Notes :
1. VGS = 10 V ※ Notes :
18
ID = 50A
2. ID = 50 A
2.0
Drain-Source On-Resistance

Drain-Source On-Resistance

16
RDS(ON), (Normalized)

14
RDS(ON) [mΩ ],

1.5 12

10

1.0 8 TA = 25℃

0.5 4

0.0 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10
o VGS, Gate to Source Volatge [V]
TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

100
※ Notes : ※ Notes :
90 VDS = 10V 100 VGS = 0V
IDR, Reverse Drain Current [A]

80
ID, Drain Current [A]

70

60
10
TA=25℃
50
TA=25℃
40

30
1
20

10

0
0 1 2 3 4 5 6 7 8 0.0 0.3 0.6 0.9 1.2 1.5

VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jun. 2021. Ver.1.3 3 Magnachip Semiconductor Ltd.

 MDE1991RH– Single N-Channel Trench MOSFET 100V
10 10000
،‫ ط‬Note : ID = 50A Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 50V Ciss Crss = Cgd
8 8000
VGS, Gate-Source Voltage [V]

Capacitance [pF]
6 6000

Coss ،‫ ط‬Notes ;
4 4000 1. VGS = 0 V
2. f = 1 MHz

2000
2 Crss

0
0 0 5 10 15 20 25 30
0 20 40 60 80 100 120

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3
10
160

140

2
10
120
100 us
ID, Drain Current [A]

ID, Drain Current [A]

1 ms 100
Operation in This Area
10
1 is Limited by R DS(on)
80
10 ms

1s 60
DC
0
10 40

Single Pulse
20
TJ=Max rated
TC=25،‫ة‬
10
-1 0
10
-1
10
0
10
1
10
2
10
3 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [،‫]ة‬

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature

0
10
D=0.5
Zθ JA(t), Thermal Response

0.2
-1
10 0.1
0.05

-2
0.02
10
0.01

-3
10

single pulse ※ Notes :

-4 Duty Factor, D=t1/t2
10
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC

-5
10
-5 -4 -3 -2 -1 0 1 2
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response

Curve

Jun. 2021. Ver.1.3 4 Magnachip Semiconductor Ltd.

 MDE1991RH– Single N-Channel Trench MOSFET 100V
Package Dimension

TO-263

Dimensions are in millimeters unless otherwise specified

Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.

Jun. 2021. Ver.1.3 5 Magnachip Semiconductor Ltd.

 MDE1991RH– Single N-Channel Trench MOSFET 100V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip
Semiconductor Ltd.

Jun. 2021. Ver.1.3 6 Magnachip Semiconductor Ltd.