Scribd
Upload
92 views2 pages

B772 PNP Transistor Specs & Ratings

This document provides specifications for a PNP bipolar junction transistor in a SOT-89 package. It lists maximum ratings such as collector-base voltage and collector power dissipation. It also provides electrical characteristics including collector-base breakdown voltage, DC current gain ranges, and transition frequency. The transistor has a typical DC current gain of 60-400 and is classified based on its hFE range.

Uploaded by

Jahongir
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
92 views2 pages

B772 PNP Transistor Specs & Ratings

This document provides specifications for a PNP bipolar junction transistor in a SOT-89 package. It lists maximum ratings such as collector-base voltage and collector power dissipation. It also provides electrical characteristics including collector-base breakdown voltage, DC current gain ranges, and transition frequency. The transistor has a typical DC current gain of 60-400 and is classified based on its hFE range.

Uploaded by

Jahongir
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

B72

TRANSISTOR (PNP)

SOT-89
FEATURES
1 2 3
Low speed switching
1. BASE
1
2. COLLETOR 2
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
3
3. EMITTER
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 0.5 W
RӨJA Thermal Resistance, junction to Ambient 250 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT


Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -5 V
Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA
Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA
Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA
DC current gain hFE VCE= -2V, IC= -1A 60 400
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V
VCE= -5V, IC=-0.1A
Transition frequency fT 80 MHz
f =10MHz

CLASSIFICATION OF hFE

Rank R O Y GR

Range 60-120 100-200 160-320 200-400

１　
JinYu www.htsemi.com
semiconductor

Ｄａｔｅ：２０１１／０５
B72
7
Typical characteristics

２　
JinYu www.htsemi.com
semiconductor

Ｄａｔｅ：２０１１／０５

You might also like