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A1015 Transistor Specs

This document provides information on a PNP transistor (part number BA). It lists the transistor's key features as having high voltage, high current, excellent hFE linearity, and low noise. It is complementary to part number C1815. The maximum ratings and electrical characteristics such as collector-base voltage, collector current, and DC current gain are specified. Typical characteristics graphs for this transistor are also included.

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Mardy Bi
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65 views2 pages

A1015 Transistor Specs

This document provides information on a PNP transistor (part number BA). It lists the transistor's key features as having high voltage, high current, excellent hFE linearity, and low noise. It is complementary to part number C1815. The maximum ratings and electrical characteristics such as collector-base voltage, collector current, and DC current gain are specified. Typical characteristics graphs for this transistor are also included.

Uploaded by

Mardy Bi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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A105

TRANSISTOR (PNP)
SOT-23

FEATURES

z High voltage and high current


z Excellent hFE Linearity
1. BASE
z Low niose
2. EMITTER
z Complementary to C1815
3. COLLECTOR

MARKING: BA

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol Parameter Value Units

VCBO Collector-Base Voltage -50 V


VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 125 ℃
Tstg Storage Temperature -55-125 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V

Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 uA

Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 uA

Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 uA

DC current gain hFE VCE=-6V, IC= -2mA 130 400

Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V

Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V


VCE=-10V, IC= -1mA
Transition frequency fT 80 MHz
f=30MHz

CLASSIFICATION OF hFE

Rank L H
Range 130-200 200-400

１　
JinYu www.htsemi.com
semiconductor

Ｄａｔｅ：２０１１／０５
A105
1

Typical Characteristics

２　
JinYu www.htsemi.com
semiconductor

Ｄａｔｅ：２０１１／０５

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